Standout Papers

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 2026 2006 2016 466
  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (1997)
    P.A. Stolk, H.‐J. Gossmann et al. Journal of Applied Physics

Immediate Impact

9 by Nobel laureates 45 from Science/Nature 62 standout
Sub-graph 1 of 19

Citing Papers

Promises and prospects of two-dimensional transistors
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Superconductivity in an infinite-layer nickelate
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2 intermediate papers

Works of H.‐J. Gossmann being referenced

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
2002 Nature
Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon
1996

Author Peers

Author Last Decade Papers Cites
H.‐J. Gossmann 3543 2254 854 1324 121 4.6k
P. J. Silvėrman 2476 2528 533 1168 103 4.3k
J. C. Bean 2978 2460 311 1508 65 3.9k
G. S. Higashi 3905 2366 662 2809 69 5.6k
L. W. Swanson 1751 1188 834 1258 115 3.4k
M. G. Lagally 1345 2566 507 893 97 3.7k
H. Wagner 4312 1769 475 3954 148 6.1k
J.‐M. Baribeau 3061 2193 346 2668 214 4.5k
A.G. Cullis 2921 1389 873 2502 126 4.5k
Inder P. Batra 1634 3084 230 1496 122 4.0k
B.A. Joyce 2698 3353 310 1445 193 4.6k

All Works

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