Standout Papers

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm 2000 2026 2008 2017 965
  1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm (2000)
    Chenming Hu, Jeffrey Bokor et al. IEEE Transactions on Electron Devices

Immediate Impact

3 by Nobel laureates 34 from Science/Nature 73 standout
Sub-graph 1 of 24

Citing Papers

Interfacial bonding enhances thermoelectric cooling in 3D-printed materials
2025 StandoutScience
The future of two-dimensional semiconductors beyond Moore’s law
2024 Standout
2 intermediate papers

Works of Digh Hisamoto being referenced

Sub-50 nm P-channel FinFET
2001
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 Standout

Author Peers

Author Last Decade Papers Cites
Digh Hisamoto 1696 217 273 370 41 1.8k
Chenming Hu 2272 232 379 402 53 2.4k
M. Ieong 1603 357 392 366 23 1.8k
Hideki Takeuchi 2039 324 401 383 67 2.2k
Bipul C. Paul 1172 147 324 273 44 1.4k
P.K. Ko 2229 147 159 290 65 2.3k
Kjell Jeppson 1143 139 542 266 89 1.6k
T. Ohguro 1313 604 179 206 58 1.4k
R. Chau 1841 450 556 506 18 2.1k
Qiaoling Tong 1710 359 249 466 86 1.9k
Davide Sacchetto 2358 264 913 330 49 2.5k

All Works

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2026