Cory Lund

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Review—The Physics of Recombinations in III-Nitride Emitters

In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates