Yu-Shyan Lin

448 total citations
37 papers, 363 citations indexed

About

Yu-Shyan Lin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Yu-Shyan Lin has authored 37 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 8 papers in Condensed Matter Physics. Recurrent topics in Yu-Shyan Lin's work include Semiconductor materials and devices (29 papers), Semiconductor Quantum Structures and Devices (25 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). Yu-Shyan Lin is often cited by papers focused on Semiconductor materials and devices (29 papers), Semiconductor Quantum Structures and Devices (25 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). Yu-Shyan Lin collaborates with scholars based in Taiwan, China and Singapore. Yu-Shyan Lin's co-authors include W. C. Hsu, Ching‐Hwa Ho, Yi‐Jane Chen, Jifu Huang, Chunyi Wu, Wei‐Chou Hsu, Shao‐Cheng Liu, Dai‐Wei Liu, Bor‐Hwang Kang and Hsiang‐Cheng Chen and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Optics Express.

In The Last Decade

Yu-Shyan Lin

37 papers receiving 355 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yu-Shyan Lin Taiwan 11 301 209 94 44 34 37 363
Mark Raymond United States 12 236 0.8× 74 0.4× 4 0.0× 13 0.3× 7 0.2× 29 333
Jia‐Min Lai China 11 145 0.5× 135 0.6× 17 0.2× 9 0.2× 3 0.1× 22 298
Teiji Yamamoto Japan 14 333 1.1× 389 1.9× 35 0.4× 5 0.1× 29 507
Brian Alvarez United States 3 247 0.8× 36 0.2× 273 2.9× 7 0.2× 5 310
Swaroop Ganguly India 8 437 1.5× 44 0.2× 87 0.9× 8 0.2× 9 478
David Rakhmilevitch Israel 8 230 0.8× 139 0.7× 221 2.4× 15 0.3× 9 598
Weiping Bai United States 13 710 2.4× 161 0.8× 21 0.2× 5 0.1× 36 745
K. Baskar India 11 139 0.5× 15 0.1× 145 1.5× 6 0.1× 29 298
Longquan Xu China 6 119 0.4× 120 0.6× 320 3.4× 1 0.0× 14 386
Ashok Chauhan India 8 94 0.3× 29 0.1× 98 1.0× 2 0.0× 30 207

Countries citing papers authored by Yu-Shyan Lin

Since Specialization
Citations

This map shows the geographic impact of Yu-Shyan Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yu-Shyan Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yu-Shyan Lin more than expected).

Fields of papers citing papers by Yu-Shyan Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yu-Shyan Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yu-Shyan Lin. The network helps show where Yu-Shyan Lin may publish in the future.

Co-authorship network of co-authors of Yu-Shyan Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Yu-Shyan Lin. A scholar is included among the top collaborators of Yu-Shyan Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yu-Shyan Lin. Yu-Shyan Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Yu-Shyan & Chun‐Cheng Lin. (2021). AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process. Science of Advanced Materials. 13(4). 638–641. 1 indexed citations
2.
Lin, Yu-Shyan, et al.. (2018). Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2Gate Dielectric Annealed in Nitrogen. IEEE Transactions on Electron Devices. 65(2). 783–787. 33 indexed citations
3.
Lin, Yu-Shyan, et al.. (2014). Low‐power 77–81 GHz CMOS LNA with excellent matching for automotive radars. Electronics Letters. 50(3). 207–209. 8 indexed citations
4.
Lin, Yu-Shyan, et al.. (2012). Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor. IEEE Transactions on Electron Devices. 59(12). 3339–3343. 3 indexed citations
5.
Lin, Yu-Shyan, et al.. (2011). Electrical, optical and surface properties of P2S5/(NH4)2Sx+Se-treated doped-channel field-effect transistors with double etch-stop layers. Thin Solid Films. 519(10). 3388–3392. 6 indexed citations
6.
Liu, Shao‐Cheng, Bor‐Hwang Kang, Yu-Shyan Lin, et al.. (2011). Comparison of therapeutic results in sudden sensorineural hearing loss with/without additional hyperbaric oxygen therapy: a retrospective review of 465 audiologically controlled cases. Clinical Otolaryngology. 36(2). 121–128. 44 indexed citations
7.
Lin, Yu-Shyan, et al.. (2011). Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels. Journal of The Electrochemical Society. 158(3). H305–H305. 9 indexed citations
8.
9.
Lin, Yu-Shyan, et al.. (2009). Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors. Applied Physics Letters. 94(6). 13 indexed citations
10.
Ho, Ching‐Hwa, et al.. (2007). Optical characterization of a GaAs/In_0.5(AlxGa_1-x)_0.5P/GaAs heterostructure cavity by piezoreflectance spectroscopy. Optics Express. 15(21). 13886–13886. 6 indexed citations
11.
Hsu, Wei‐Chou, et al.. (2007). An Improved Symmetrically-Graded Doped-Channel Heterostructure Field-Effect Transistor. Journal of the Korean Physical Society. 50(6). 1878–1878. 1 indexed citations
12.
Hsu, Wei‐Chou, et al.. (2007). A metamorphic heterostructure field-effect transistor with a double delta-doped channel. Semiconductor Science and Technology. 22(7). 784–787. 4 indexed citations
13.
Hsu, W. C., et al.. (2006). Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT. IEEE Transactions on Electron Devices. 53(3). 406–412. 20 indexed citations
14.
Hsu, Wei‐Chou, et al.. (2006). Strain-Relaxed In[sub 0.1]Al[sub 0.25]Ga[sub 0.65]As∕In[sub 0.22]Ga[sub 0.78]As∕In[sub 0.1]Al[sub 0.25]Ga[sub 0.65]As HEMT. Journal of The Electrochemical Society. 153(9). G826–G826. 5 indexed citations
15.
Hsu, W. C., Yi‐Jane Chen, Chun‐Sing Lee, et al.. (2005). Characteristics of In<tex>$_0.425$</tex>Al<tex>$_0.575$</tex>As–InxGa<tex>$_1-x$</tex>As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels. IEEE Transactions on Electron Devices. 52(6). 1079–1086. 31 indexed citations
16.
Lin, Yu-Shyan, et al.. (2005). Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor. Journal of The Electrochemical Society. 152(8). G627–G627. 19 indexed citations
17.
Lin, Yu-Shyan, et al.. (2005). Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K. Journal of The Electrochemical Society. 152(10). G778–G778. 10 indexed citations
18.
Chen, Yen‐Wei, et al.. (2001). An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel. Japanese Journal of Applied Physics. 40(1A). L7–L7. 3 indexed citations
19.
Lin, Yu-Shyan, et al.. (1999). High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor. Applied Physics Letters. 75(11). 1616–1618. 15 indexed citations
20.
Buehler, M., et al.. (1990). End-of-fabrication CMOS process monitor. NASA STI/Recon Technical Report N. 92. 16200. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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