Yuanbin Dai

421 total citations
16 papers, 367 citations indexed

About

Yuanbin Dai is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Yuanbin Dai has authored 16 papers receiving a total of 367 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 13 papers in Electronic, Optical and Magnetic Materials and 11 papers in Materials Chemistry. Recurrent topics in Yuanbin Dai's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (8 papers). Yuanbin Dai is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (8 papers). Yuanbin Dai collaborates with scholars based in China. Yuanbin Dai's co-authors include Yongzhong Wu, Yongliang Shao, Yuan Tian, Lei Zhang, Xiaopeng Hao, Qin Huo, Haodong Zhang, Jiaoxian Yu, Xiaopeng Hao and Enling Li and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and ACS Applied Materials & Interfaces.

In The Last Decade

Yuanbin Dai

16 papers receiving 358 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yuanbin Dai China 11 290 270 190 95 52 16 367
Byung Oh Jung South Korea 11 367 1.3× 236 0.9× 250 1.3× 195 2.1× 30 0.6× 18 469
Taha Ayari France 11 292 1.0× 187 0.7× 107 0.6× 131 1.4× 68 1.3× 14 425
M. Z. Kauser United States 11 268 0.9× 147 0.5× 138 0.7× 179 1.9× 25 0.5× 16 400
K. Yoshimura Japan 7 213 0.7× 334 1.2× 248 1.3× 125 1.3× 93 1.8× 9 400
C. J. Kao Taiwan 11 191 0.7× 281 1.0× 228 1.2× 196 2.1× 34 0.7× 19 420
Wen‐How Lan Taiwan 11 147 0.5× 189 0.7× 76 0.4× 180 1.9× 59 1.1× 42 337
J. L. Pau Spain 8 225 0.8× 299 1.1× 286 1.5× 168 1.8× 30 0.6× 18 445
Albert Minj Belgium 12 207 0.7× 261 1.0× 164 0.9× 229 2.4× 90 1.7× 48 476
D. Y. Song United States 11 199 0.7× 310 1.1× 161 0.8× 146 1.5× 44 0.8× 21 383

Countries citing papers authored by Yuanbin Dai

Since Specialization
Citations

This map shows the geographic impact of Yuanbin Dai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuanbin Dai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuanbin Dai more than expected).

Fields of papers citing papers by Yuanbin Dai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuanbin Dai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuanbin Dai. The network helps show where Yuanbin Dai may publish in the future.

Co-authorship network of co-authors of Yuanbin Dai

This figure shows the co-authorship network connecting the top 25 collaborators of Yuanbin Dai. A scholar is included among the top collaborators of Yuanbin Dai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuanbin Dai. Yuanbin Dai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Tian, Yuan, Yongliang Shao, Xiaopeng Hao, et al.. (2019). Preparation and optimization of freestanding GaN using low-temperature GaN layer. Frontiers of Materials Science. 13(3). 314–322. 1 indexed citations
2.
Tian, Yuan, Yongliang Shao, Yongzhong Wu, et al.. (2015). Direct growth of freestanding GaN on C-face SiC by HVPE. Scientific Reports. 5(1). 10748–10748. 53 indexed citations
3.
Zhang, Lei, Xianlei Li, Yongliang Shao, et al.. (2015). Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate. ACS Applied Materials & Interfaces. 7(8). 4504–4510. 71 indexed citations
4.
Zhang, Lei, Jiaoxian Yu, Xiaopeng Hao, et al.. (2014). Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate. Scientific Reports. 4(1). 4179–4179. 35 indexed citations
5.
Shao, Yongliang, Lei Zhang, Xiaopeng Hao, et al.. (2014). Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction. Scientific Reports. 4(1). 5934–5934. 12 indexed citations
6.
Dai, Yuanbin, Yongzhong Wu, Lei Zhang, et al.. (2014). A novel porous substrate for the growth of high quality GaN crystals by HVPE. RSC Advances. 4(66). 35106–35111. 10 indexed citations
7.
Tian, Yuan, Lei Zhang, Yongzhong Wu, et al.. (2014). Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method. CrystEngComm. 16(11). 2317–2317. 18 indexed citations
8.
Dai, Yuanbin, Yongliang Shao, Yongzhong Wu, et al.. (2014). Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy. RSC Advances. 4(41). 21504–21504. 12 indexed citations
9.
Zhang, Lei, Yuanbin Dai, Yongzhong Wu, et al.. (2014). Epitaxial growth of a self-separated GaN crystal by using a novel high temperature annealing porous template. CrystEngComm. 16(38). 9063–9068. 15 indexed citations
10.
Shao, Yongliang, Yuanbin Dai, Xiaopeng Hao, et al.. (2013). EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate. CrystEngComm. 15(39). 7965–7965. 18 indexed citations
11.
Zhang, Lei, Yongliang Shao, Yongzhong Wu, et al.. (2013). Simulation and Growth Study of V/III Ratio Effects on HVPE Grown GaN. International Journal of Electrochemical Science. 8(3). 4110–4119. 10 indexed citations
12.
Zhang, Haodong, Yongliang Shao, Lei Zhang, et al.. (2012). Growth of high quality GaN on a novel designed bonding-thinned template by HVPE. CrystEngComm. 14(14). 4777–4777. 25 indexed citations
13.
Li, Enling, et al.. (2011). The study of electronic structures and optical properties of Al-doped GaN. Journal of Physics Conference Series. 276. 12044–12044. 4 indexed citations
14.
Li, Enling, Zhen Cui, Yuanbin Dai, Danna Zhao, & Tao Zhao. (2011). Synthesis and field emission properties of GaN nanowires. Applied Surface Science. 24 indexed citations
15.
Li, Enling, et al.. (2011). Study on the Electronic Transport Properties of Zigzag GaN Nanotubes. Journal of Physics Conference Series. 276. 12046–12046. 8 indexed citations
16.
Chen, Jun, Yuanbin Dai, Jikui Luo, et al.. (2007). Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters. Applied Physics Letters. 90(25). 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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