Yoshimi Shioya

441 total citations
26 papers, 350 citations indexed

About

Yoshimi Shioya is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Yoshimi Shioya has authored 26 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 17 papers in Electronic, Optical and Magnetic Materials and 12 papers in Mechanics of Materials. Recurrent topics in Yoshimi Shioya's work include Semiconductor materials and devices (19 papers), Copper Interconnects and Reliability (17 papers) and Semiconductor materials and interfaces (10 papers). Yoshimi Shioya is often cited by papers focused on Semiconductor materials and devices (19 papers), Copper Interconnects and Reliability (17 papers) and Semiconductor materials and interfaces (10 papers). Yoshimi Shioya collaborates with scholars based in Japan, Poland and China. Yoshimi Shioya's co-authors include Mamoru Maeda, Toshiyuki Ohdaira, Ryoichi Suzuki, Kazuo Maeda, Takahiro Itoh, Shinichi Inoue, Yutaka Seino, Kazuhiko Omote, Kenji Ito and Yoshinori Kobayashi and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Journal of Non-Crystalline Solids.

In The Last Decade

Yoshimi Shioya

26 papers receiving 332 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshimi Shioya Japan 12 273 176 141 123 57 26 350
K. Hieber Germany 9 253 0.9× 123 0.7× 148 1.0× 98 0.8× 65 1.1× 25 345
P.J. Pokela United States 8 351 1.3× 302 1.7× 194 1.4× 140 1.1× 77 1.4× 13 438
Changsup Ryu United States 10 413 1.5× 334 1.9× 156 1.1× 80 0.7× 120 2.1× 16 518
S. G. Malhotra United States 8 230 0.8× 194 1.1× 129 0.9× 85 0.7× 103 1.8× 18 367
H. Rathore United States 7 323 1.2× 244 1.4× 62 0.4× 46 0.4× 43 0.8× 15 367
M. El-Bouanani United States 12 484 1.8× 165 0.9× 39 0.3× 121 1.0× 164 2.9× 16 514
E. C. Douglas United States 8 268 1.0× 65 0.4× 147 1.0× 91 0.7× 91 1.6× 16 331
Guosheng Sun China 13 366 1.3× 126 0.7× 37 0.3× 90 0.7× 131 2.3× 56 455
A. V. Vairagar Singapore 13 397 1.5× 357 2.0× 76 0.5× 48 0.4× 28 0.5× 23 418
Shinji Yamada Japan 11 360 1.3× 167 0.9× 70 0.5× 70 0.6× 103 1.8× 24 503

Countries citing papers authored by Yoshimi Shioya

Since Specialization
Citations

This map shows the geographic impact of Yoshimi Shioya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshimi Shioya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshimi Shioya more than expected).

Fields of papers citing papers by Yoshimi Shioya

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshimi Shioya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshimi Shioya. The network helps show where Yoshimi Shioya may publish in the future.

Co-authorship network of co-authors of Yoshimi Shioya

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshimi Shioya. A scholar is included among the top collaborators of Yoshimi Shioya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshimi Shioya. Yoshimi Shioya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shioya, Yoshimi, Hideki Takagi, Ryutaro Maeda, & Yasuo Kokubun. (2008). Analysis of Stress in Plasma Enhanced Chemical Vapor Deposition Silicon Nitride Film Irradiated with Ultraviolet Light. Japanese Journal of Applied Physics. 47(9R). 7081–7081. 3 indexed citations
2.
Shioya, Yoshimi, Toshiyuki Ohdaira, Ryoichi Suzuki, Yutaka Seino, & Kazuhiko Omote. (2008). Effect of UV anneal on plasma CVD low-k film. Journal of Non-Crystalline Solids. 354(26). 2973–2982. 19 indexed citations
3.
Ohdaira, Toshiyuki, et al.. (2006). Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing. Japanese Journal of Applied Physics. 45(11R). 8691–8691. 1 indexed citations
4.
Shioya, Yoshimi, et al.. (2005). Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor. Japanese Journal of Applied Physics. 44(6R). 3879–3879. 18 indexed citations
5.
Suzuki, Ryoichi, Toshiyuki Ohdaira, Yoshinori Kobayashi, et al.. (2004). Positron and Positronium Annihilation in Low-Dielectric-Constant Films Studied by a Pulsed Positron Beam. Materials science forum. 445-446. 224–228. 7 indexed citations
6.
Suzuki, Ryoichi, et al.. (2003). Positron and positronium annihilation in silica-based thin films studied by a pulsed positron beam. Radiation Physics and Chemistry. 68(3-4). 339–343. 12 indexed citations
7.
Shioya, Yoshimi, et al.. (2003). Copper Barrier Properties of Low Dielectric Constant SiOCNH Film Deposited by Plasma-Enhanced CVD. Journal of The Electrochemical Society. 151(1). C56–C61. 11 indexed citations
8.
Shioya, Yoshimi, et al.. (2003). The Effects of Dilution Gas and Pressure on the Properties of PE-CVD Low-k Film. Journal of The Electrochemical Society. 150(2). F1–F1. 8 indexed citations
9.
Shioya, Yoshimi, et al.. (2002). Analysis of Pore and Pore-Related Properties in Plasma-Enhanced Chemical Vapor Deposition Low Dielectric Constant Films. Journal of The Electrochemical Society. 149(9). F103–F103. 4 indexed citations
10.
11.
Suzuki, Ryoichi, et al.. (2001). Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy. Japanese Journal of Applied Physics. 40(4B). L414–L414. 29 indexed citations
12.
Hara, Tohru, et al.. (2001). Mechanism of Mechanical and Chemical Polishing in Low Dielectric Constant Plasma-Enhanced Chemical Vapor Deposition SiOC Layer from Hexamethyldisiloxane. Electrochemical and Solid-State Letters. 4(8). G65–G65. 9 indexed citations
13.
Aoyama, M., et al.. (1998). Shading damage in sputter cleaning using Ar gas plasma. Vacuum. 51(4). 555–558. 1 indexed citations
14.
Shioya, Yoshimi, et al.. (1994). Generation Mechanism of Photoresist Residue after Ashing. Journal of The Electrochemical Society. 141(9). 2487–2493. 1 indexed citations
15.
Shioya, Yoshimi, et al.. (1987). Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film. Journal of Applied Physics. 61(11). 5102–5109. 46 indexed citations
16.
Shioya, Yoshimi, et al.. (1987). Temperature Transients of Ion‐Implanted Silicon Wafers during Rapid Thermal Annealing. Journal of The Electrochemical Society. 134(8). 2007–2010. 3 indexed citations
17.
Shioya, Yoshimi & Mamoru Maeda. (1986). Analysis of the effects of annealing on resistivity of chemical vapor deposition tungsten–silicide films. Journal of Applied Physics. 60(1). 327–333. 33 indexed citations
18.
Shioya, Yoshimi, et al.. (1986). Changes in Resistivity and Composition of Chemical Vapor Deposited Tungsten Silicide Films by Annealing. Journal of The Electrochemical Society. 133(7). 1475–1479. 14 indexed citations
19.
Shioya, Yoshimi, et al.. (1986). Barrier effect of selective chemical vapor deposited tungsten films. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(5). 1175–1179. 7 indexed citations
20.
Shioya, Yoshimi, Takahiro Itoh, Shinichi Inoue, & Mamoru Maeda. (1985). Analysis of stress in chemical vapor deposition tungsten silicide film. Journal of Applied Physics. 58(11). 4194–4199. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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