Mamoru Maeda

556 total citations
22 papers, 399 citations indexed

About

Mamoru Maeda is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, Mamoru Maeda has authored 22 papers receiving a total of 399 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 5 papers in Mechanical Engineering. Recurrent topics in Mamoru Maeda's work include Semiconductor materials and interfaces (14 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Mamoru Maeda is often cited by papers focused on Semiconductor materials and interfaces (14 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Mamoru Maeda collaborates with scholars based in Japan. Mamoru Maeda's co-authors include Yoshimi Shioya, Takashi Ito, T. Sugii, Takahiro Itoh, Shinichi Inoue, Takashi Eshita, Toshisada Suzuki, Satoshi Nakamura, S. Inoue and Nobuo Toyokura and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Electron Device Letters.

In The Last Decade

Mamoru Maeda

20 papers receiving 373 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mamoru Maeda Japan 12 339 189 91 64 61 22 399
J. D. Parsons United States 14 258 0.8× 143 0.8× 38 0.4× 96 1.5× 47 0.8× 36 359
G. Henein United States 9 154 0.5× 137 0.7× 40 0.4× 102 1.6× 87 1.4× 18 296
E. Lane United States 12 321 0.9× 116 0.6× 35 0.4× 75 1.2× 116 1.9× 31 374
S. Nygren Sweden 11 295 0.9× 278 1.5× 65 0.7× 133 2.1× 103 1.7× 24 424
Véronique Soulière France 11 312 0.9× 153 0.8× 68 0.7× 122 1.9× 27 0.4× 74 388
Katsuki Furukawa Japan 10 359 1.1× 117 0.6× 91 1.0× 109 1.7× 29 0.5× 17 426
T. R. Cass United States 11 301 0.9× 163 0.9× 36 0.4× 121 1.9× 25 0.4× 20 365
R. Saia United States 11 314 0.9× 63 0.3× 85 0.9× 83 1.3× 33 0.5× 38 377
T. Nitta Japan 7 307 0.9× 112 0.6× 226 2.5× 67 1.0× 94 1.5× 26 390
R. Kuhnert Germany 9 275 0.8× 43 0.2× 46 0.5× 144 2.3× 36 0.6× 13 363

Countries citing papers authored by Mamoru Maeda

Since Specialization
Citations

This map shows the geographic impact of Mamoru Maeda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mamoru Maeda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mamoru Maeda more than expected).

Fields of papers citing papers by Mamoru Maeda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mamoru Maeda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mamoru Maeda. The network helps show where Mamoru Maeda may publish in the future.

Co-authorship network of co-authors of Mamoru Maeda

This figure shows the co-authorship network connecting the top 25 collaborators of Mamoru Maeda. A scholar is included among the top collaborators of Mamoru Maeda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mamoru Maeda. Mamoru Maeda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kato, Takashi, Takashi Ito, & Mamoru Maeda. (1988). Chemical Vapor Deposition of Aluminum Enhanced by Magnetron‐Plasma. Journal of The Electrochemical Society. 135(2). 455–459. 9 indexed citations
2.
Sugii, T., et al.. (1988). beta -SiC/Si heterojunction bipolar transistors with high current gain. IEEE Electron Device Letters. 9(2). 87–89. 61 indexed citations
3.
Eshita, Takashi, et al.. (1988). Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates. MRS Proceedings. 116. 1 indexed citations
4.
Eshita, Takashi, et al.. (1988). Heteroepitaxial β ‐ SiC on Si. Journal of The Electrochemical Society. 135(5). 1255–1260. 39 indexed citations
5.
Shioya, Yoshimi, et al.. (1987). Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film. Journal of Applied Physics. 61(11). 5102–5109. 46 indexed citations
6.
Nakamura, Satoshi, et al.. (1987). Low Temperature Silicon Epitaxy Using Si2 H 6. Journal of The Electrochemical Society. 134(9). 2320–2323. 23 indexed citations
7.
Ohba, Takayuki, Satoshi Inoue, & Mamoru Maeda. (1987). Selective CVD tungsten silicide for VLSI applications. 213–216. 13 indexed citations
8.
Sugii, T., et al.. (1987). Si Heterojunction Bipolar Transistors with Single‐Crystalline β ‐ SiC Emitters. Journal of The Electrochemical Society. 134(10). 2545–2549. 29 indexed citations
9.
Shioya, Yoshimi, et al.. (1987). Temperature Transients of Ion‐Implanted Silicon Wafers during Rapid Thermal Annealing. Journal of The Electrochemical Society. 134(8). 2007–2010. 3 indexed citations
10.
Maeda, Mamoru, et al.. (1987). Selective Doped Polysilicon Growth: Effect of Carbon on the Selective Doped Silicon Film Growth. Journal of The Electrochemical Society. 134(11). 2862–2867.
11.
Shioya, Yoshimi, et al.. (1987). Properties of Chemical Vapor Deposited Tungsten Silicide Films Using Reaction of  WF 6 and Si2 H 6. Journal of The Electrochemical Society. 134(5). 1220–1224. 9 indexed citations
12.
Sugii, T., et al.. (1986). Epitaxial SiC Emitter for High Speed Bipolar VLSIs. Symposium on VLSI Technology. 45–46. 3 indexed citations
13.
Shioya, Yoshimi & Mamoru Maeda. (1986). Analysis of the effects of annealing on resistivity of chemical vapor deposition tungsten–silicide films. Journal of Applied Physics. 60(1). 327–333. 33 indexed citations
14.
Shioya, Yoshimi, et al.. (1986). Barrier effect of selective chemical vapor deposited tungsten films. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(5). 1175–1179. 7 indexed citations
15.
Shioya, Yoshimi & Mamoru Maeda. (1986). Comparison of Phosphosilicate Glass Films Deposited by Three Different Chemical Vapor Deposition Methods. Journal of The Electrochemical Society. 133(9). 1943–1950. 17 indexed citations
16.
Shioya, Yoshimi, et al.. (1986). Changes in Resistivity and Composition of Chemical Vapor Deposited Tungsten Silicide Films by Annealing. Journal of The Electrochemical Society. 133(7). 1475–1479. 14 indexed citations
17.
Shioya, Yoshimi, Takahiro Itoh, Shinichi Inoue, & Mamoru Maeda. (1985). Analysis of stress in chemical vapor deposition tungsten silicide film. Journal of Applied Physics. 58(11). 4194–4199. 30 indexed citations
18.
Inoue, S., Nobuo Toyokura, T. Nakamura, Mamoru Maeda, & M. Takagi. (1983). Properties of Molybdenum Silicide Film Deposited by Chemical Vapor Deposition. Journal of The Electrochemical Society. 130(7). 1603–1607. 26 indexed citations
19.
Fukuta, M., et al.. (1974). GaAs 8 GHz-band high power FET. 11 indexed citations
20.
Sakanoue, M., et al.. (1966). Studies of the Adsorption and Electrodeposition of Protactinium. Radiochimica Acta. 5(2). 79–87. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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