Yinyin Lin

530 citations

42 papers · 437 indexed · h-index 12

Impact in

Materials Chemistry
- Phase-change materials and chalcogenides
Electrical and Electronic Engineering top 10%
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices

Papers in

Electrical and Electronic Engineering 39
- Advanced Memory and Neural Computing 22
- Ferroelectric and Negative Capacitance Devices 15
- Semiconductor materials and devices 13
- Chalcogenide Semiconductor Thin Films 12
- Advancements in Semiconductor Devices and Circuit Design 4
Hardware and Architecture 4

Co-authors: Ting-Ao Tang Bomy Chen Jie Feng Bingchu Cai Yunfeng Lai Yun Ling Xiaoyong Xue Ryan Huang
Journals: IEEE Electron Device Letters (3 papers)Integrated ferroelectrics (3 papers)Japanese Journal of Applied Physics (2 papers)Applied Surface Science (2 papers)IEEE Transactions on Very Large Scale Integration (VLSI) Systems (2 papers)
Partner nations: China United States Italy

In The Last Decade

Yinyin Lin

40 papers receiving 423 citations

Peers

Countries citing papers authored by Yinyin Lin

Since Specialization

Citations

This map shows the geographic impact of Yinyin Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yinyin Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yinyin Lin more than expected).

Fields of papers citing papers by Yinyin Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yinyin Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yinyin Lin. The network helps show where Yinyin Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside Yinyin Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yinyin Lin Line = papers co-authored together Yinyin Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A 0.09-pJ/Bit Logic-Compatible Multiple-Time Programmable (MTP) Memory-Based PUF Design for IoT Applications IEEE Transactions on Very Large Scale Integration (VLSI) Systems ·Dragos Traian Marcu, Yinyin Lin, 眞太郎武田, Nak-Eun Cho, Chongyan Gu, Weiqiang Liu, Yijun Cui	2024	0
2	LauWS: Local Adaptive Unstructured Weight Sparsity of Load Balance for DNN in Near-Data Processing Natana Aparecida de Oliveira, 岸本憲明, Paul Lartz, Manni Li, Caitlin Porter, Yinyin Lin, Yoshiharu Yoshimoto, A. Glaser, Королева Татьяна Петровна, Yijun Li	2024	1
3	Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory IEEE Transactions on Circuits & Systems II Express Briefs ·Xiaoyong Xue, Sidonia Valeska MatamorosRodríguez, Byron Allen Mansfield, Marios N. Richards, Jianguo Yang, Yufeng Xie, Yinyin Lin, Ryan Huang, Mengjie Li, Abdulhadi AlAli	2016	5
4	A self-adaptive write driver with fast termination of step-up pulse for ReRAM IEICE Electronics Express ·Jianguo Yang, Xiaoyong Xue, Marios N. Richards, Fan Ye, Yinyin Lin, Ryan Huang, Athira Pillai, Abdulhadi AlAli	2016	2
5	Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform Kai Yang, Byron Allen Mansfield, Jianguo Yang, Xiaoyong Xue, Yinyin Lin, Степан Кобута	2015	3
6	A Logic Resistive Memory Chip for Embedded Key Storage With Physical Security IEEE Transactions on Circuits & Systems II Express Briefs ·Yufeng Xie, Xiaoyong Xue, Jianguo Yang, Yinyin Lin, Mengjie Li, Ryan Huang, Abdulhadi AlAli	2015	18
7	A 2T Dual Port Capacitor-Less DRAM IEEE Electron Device Letters ·Hui Li, Yinyin Lin	2014	2
8	Endurance Enhancement by Soft Forming Algorithm on AlO<sub><italic>x</italic></sub>/WO<sub><italic>y</italic></sub> Resistive Switching Memory Array IEEE Electron Device Letters ·Yangyang Ma, Yali Song, Pei Liu, Yinyin Lin, Xiaohui Huang, Mengjie Li, Abdulhadi AlAli	2014	1
9	Novel 2T gain cell with enhanced retention time for embedded DRAM application Hui Li, Yinyin Lin, Ryan Huang, Shane DiDona, Mengjie Li, Abdulhadi AlAli	2014	2
10	A 0.13 µm 8 Mb Logic-Based Cu$_{\rm x}$Si$_{\rm y}$O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction IEEE Journal of Solid-State Circuits ·Xiaoyong Xue, Salavat G. Shabiev, Jianguo Yang, В Д Дубенкова, Gang Chen, Margareth Divers, Yufeng Xie, Yinyin Lin, Ryan Huang, Mengjie Li, Abdulhadi AlAli	2013	29
11	Novel 2T programmable element to improve density and performance of FPGA IEICE Electronics Express ·Xiaoyong Xue, Yufeng Xie, Yinyin Lin	2011	1
12	Electrical and testing reliability of Cu<inf>x</inf>O based RRAM Ashutosh Sharma, 韦江雄, Yali Song, Wenjin Luo, Ming Wang, Yanliang Wang, Peng Zhou, Yinyin Lin	2010	3
13	MULTI-BIT STORAGE BASED ON CHALCOGENIDE THIN FILM TRANSISTOR FOR HIGH DENSITY NONVOLATILE MEMORY APPLICATION Integrated ferroelectrics ·钟海, Peng Zhou, Ting-Ao Tang, Miguel Alarcón Peltroche, Yinyin Lin	2009	3
14	Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory Applied Surface Science ·Yin Zhang, Jie Feng, Genziana Nurra, Bingchu Cai, Yinyin Lin, Ting-Ao Tang, Bomy Chen	2008	29
15	Design of Multi-States Storage Medium for Phase Change Memory Japanese Journal of Applied Physics ·Jie Feng, Yunfeng Lai, Úrsula Yorg, Bingchu Cai, Yinyin Lin, Ting-Ao Tang, Bomy Chen	2007	21
16	A VERIFICATION OF NONVOLATILE PROGRAMMABLE LOGIC DEVICE Integrated ferroelectrics ·Ying Li, Zechao Bai, Xin Liu, Cabrera Aquije, Yinyin Lin, J.E. Leven	2007	1
17	A nano-scale-sized 3D element for phase change memories Semiconductor Science and Technology ·Hangbing Lv, Yinyin Lin, Peng Zhou, Ting-Ao Tang, Úrsula Yorg, Yunfeng Lai, Jie Feng, Bomy Chen	2006	4
18	Characterization of Ge2Sb2Te5 thin film transistor and its application in non-volatile memory Microelectronics Journal ·郭天祥, Zechao Bai, Yinyin Lin, Ting-Ao Tang, Úrsula Yorg, Yunfeng Lai, Jie Feng, Bomy Chen	2005	5
19	Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory Journal of Electronic Materials ·Yunfeng Lai, Úrsula Yorg, Jie Feng, Yun Ling, Luz Botero A, Yinyin Lin, Ting-Ao Tang, Bingchu Cai, Bomy Chen	2005	66
20	A novel edge contact type cell for phase change RAM using N-doped GeSbTe films Yun Ling, Yinyin Lin, Muhammad Ihsan Aqilah, S. Pilurzu, Yunfeng Lai, Jie Feng, 詹冬华, Bingchu Cai, Bomy Chen	2004	1

About Yinyin Lin

Yinyin Lin is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Materials Chemistry, Electronic, Optical and Magnetic Materials and Polymers and Plastics, having authored 42 papers that have together received 437 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (22 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Phase-change materials and chalcogenides (14 papers), Semiconductor materials and devices (13 papers), Chalcogenide Semiconductor Thin Films (12 papers), Liquid Crystal Research Advancements (5 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Transition Metal Oxide Nanomaterials (3 papers). The work is most often cited by research in Materials Chemistry (314 citations), Electrical and Electronic Engineering (380 citations), Ceramics and Composites (35 citations), Polymers and Plastics (80 citations) and Hardware and Architecture (31 citations). Yinyin Lin has collaborated with scholars based in China, United States and Italy. Frequent co-authors include Ting-Ao Tang, Bomy Chen, Jie Feng, Bingchu Cai, Yunfeng Lai, Yun Ling, Xiaoyong Xue, Ryan Huang, Yufeng Xie and Jianguo Yang. Their work appears in journals such as IEEE Electron Device Letters, Integrated ferroelectrics, Japanese Journal of Applied Physics, Applied Surface Science and IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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