Roberto Bez

743 total citations
23 papers, 580 citations indexed

About

Roberto Bez is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Roberto Bez has authored 23 papers receiving a total of 580 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 4 papers in Computer Networks and Communications. Recurrent topics in Roberto Bez's work include Advanced Memory and Neural Computing (12 papers), Phase-change materials and chalcogenides (11 papers) and Semiconductor materials and devices (11 papers). Roberto Bez is often cited by papers focused on Advanced Memory and Neural Computing (12 papers), Phase-change materials and chalcogenides (11 papers) and Semiconductor materials and devices (11 papers). Roberto Bez collaborates with scholars based in Italy, United States and Switzerland. Roberto Bez's co-authors include Agostino Pirovano, L. Baldi, E. Varesi, Gurtej Sandhu, C. David Wright, Maurizio Moroni, Mustafa M. Aziz, Lei Wang, Purav Shah and M. Pasotti and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment and Solid-State Electronics.

In The Last Decade

Roberto Bez

21 papers receiving 545 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Roberto Bez Italy 11 494 390 112 91 70 23 580
D. Mantegazza Italy 12 454 0.9× 434 1.1× 132 1.2× 128 1.4× 53 0.8× 13 548
S.O. Park South Korea 10 485 1.0× 506 1.3× 142 1.3× 133 1.5× 80 1.1× 26 621
Dae-Hwan Ahn South Korea 13 609 1.2× 417 1.1× 135 1.2× 75 0.8× 72 1.0× 37 662
Mattia Boniardi Italy 15 617 1.2× 588 1.5× 214 1.9× 104 1.1× 72 1.0× 25 685
R. Cheek United States 15 689 1.4× 559 1.4× 139 1.2× 117 1.3× 144 2.1× 31 768
T. Lowrey United States 8 373 0.8× 348 0.9× 77 0.7× 99 1.1× 35 0.5× 12 423
F. Ottogalli Italy 9 395 0.8× 362 0.9× 77 0.7× 113 1.2× 29 0.4× 11 470
Yinyin Lin China 12 380 0.8× 314 0.8× 80 0.7× 85 0.9× 53 0.8× 42 437
M. Tosi Italy 9 424 0.9× 380 1.0× 80 0.7× 124 1.4× 30 0.4× 13 498
Y.N. Hwang South Korea 10 380 0.8× 288 0.7× 90 0.8× 94 1.0× 27 0.4× 21 473

Countries citing papers authored by Roberto Bez

Since Specialization
Citations

This map shows the geographic impact of Roberto Bez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Roberto Bez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Roberto Bez more than expected).

Fields of papers citing papers by Roberto Bez

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Roberto Bez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Roberto Bez. The network helps show where Roberto Bez may publish in the future.

Co-authorship network of co-authors of Roberto Bez

This figure shows the co-authorship network connecting the top 25 collaborators of Roberto Bez. A scholar is included among the top collaborators of Roberto Bez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Roberto Bez. Roberto Bez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fantini, Paolo, E. Varesi, Agostino Pirovano, et al.. (2026). Microscopic model of the operation of the single-chalcogenide X-point memory. Communications Materials. 7(1).
2.
Gola, A., et al.. (2020). Industrial exploitation of SiPM technology developed for basic research. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 978. 164410–164410. 8 indexed citations
3.
Baldi, L., Roberto Bez, & Gurtej Sandhu. (2014). Emerging memories. Solid-State Electronics. 102. 2–11. 24 indexed citations
4.
Bez, Roberto, P. Cappelletti, G. Servalli, & Agostino Pirovano. (2013). Phase Change Memories have taken the field. 13–16. 12 indexed citations
5.
Bez, Roberto & P. Cappelletti. (2012). Emerging memory technology perspective. 1–2. 5 indexed citations
6.
Pellizzer, F. & Roberto Bez. (2012). “Phase-Change Memories for nano-scale technology and design”. 1–4. 5 indexed citations
7.
Boniardi, Mattia, Andrea Redaelli, I. Tortorelli, et al.. (2012). Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory. 1–3. 10 indexed citations
8.
Prall, Kirk, Nirmal Ramaswamy, K. W. Holtzclaw, et al.. (2012). An Update on Emerging Memory: Progress to 2Xnm. 1–5. 21 indexed citations
9.
Wright, C. David, Lei Wang, Purav Shah, et al.. (2010). The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories. IEEE Transactions on Nanotechnology. 10(4). 900–912. 52 indexed citations
10.
Boniardi, Mattia, Daniele Ielmini, I. Tortorelli, et al.. (2010). Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories. Solid-State Electronics. 58(1). 11–16. 23 indexed citations
11.
Pellizzer, F. & Roberto Bez. (2010). Non-Volatile semiconductor memories for nano-scale technology. 2 indexed citations
12.
Pasotti, M., Massimo Borghi, Paolo Mattavelli, et al.. (2010). A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput. 268–269. 57 indexed citations
13.
Pasotti, M., Massimo Borghi, Paolo Mattavelli, et al.. (2010). A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology. IEEE Journal of Solid-State Circuits. 46(1). 52–63. 25 indexed citations
14.
Bez, Roberto. (2009). Chalcogenide PCM: a memory technology for next decade. 1–4. 82 indexed citations
15.
Bez, Roberto, E. Camerlenghi, & Agostino Pirovano. (2008). Materials and Processes for Non-Volatile Memories. Materials science forum. 608. 111–132. 6 indexed citations
16.
Bez, Roberto. (2005). Innovative technologies for high density non-volatile semiconductor memories. Microelectronic Engineering. 80. 249–255. 24 indexed citations
17.
Bez, Roberto, et al.. (2004). Non Volatile Memory Technologies: Floating Gate Concept Evolution. MRS Proceedings. 830. 2 indexed citations
18.
Bez, Roberto & Agostino Pirovano. (2004). Non-volatile memory technologies: emerging concepts and new materials. Materials Science in Semiconductor Processing. 7(4-6). 349–355. 208 indexed citations
19.
Bez, Roberto. (2004). Recent Development in Phase Change Memory. 4 indexed citations
20.
Modelli, Alberto, Roberto Bez, & A. Visconti. (2001). Multi Level Flash Memory Technology. Medical Entomology and Zoology. 2001. 516–517. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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