Y. Noguchi

574 citations

23 papers · 369 indexed · h-index 13

Atomic and Molecular Physics, and Optics top 10%
- Magnetic properties of thin films 18
- Quantum and electron transport phenomena 3
Condensed Matter Physics
- Physics of Superconductivity and Magnetism 4
Electrical and Electronic Engineering
- Ferroelectric and Negative Capacitance Devices 10
- Advanced Memory and Neural Computing 9
- Semiconductor materials and devices 4
Electronic, Optical and Magnetic Materials
- Magnetic Properties and Applications 7
Hardware and Architecture
Materials Chemistry
- ZnO doping and properties 3

Co-authors: H. Honjo M. Yasuhira Shoji Ikeda Tetsuo Endoh H. Sato S. Miura T. Nasuno M. Niwa
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: IEEE Transactions on Magnetics (4 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Journal of Solid-State Circuits (2 papers)
Partner nations: Japan

In The Last Decade

Y. Noguchi

23 papers receiving 356 citations

Peers

Countries citing papers authored by Y. Noguchi

Since Specialization

Citations

This map shows the geographic impact of Y. Noguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Noguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Noguchi more than expected).

Fields of papers citing papers by Y. Noguchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Noguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Noguchi. The network helps show where Y. Noguchi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Y. Noguchi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Y. Noguchi Line = papers co-authored together Y. Noguchi links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 10⁷ for eFlash-type MRAM 2022 International Electron Devices Meeting (IEDM) ·H. Honjo,K. Nishioka,S. Miura,Hiroshi Naganuma,Muhammad R. Fauzie,T. Nasuno,T. Tanigawa,Y. Noguchi,Hiroshi Inoue,M. Yasuhira,Shoji Ikeda,Tetsuo Endoh	2022	2
2	First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM IEEE Transactions on Electron Devices ·K. Nishioka,S. Miura,H. Honjo,Hiroshi Inoue,Muhammad R. Fauzie,T. Nasuno,Hiroshi Naganuma,T. V. A. Nguyen,Y. Noguchi,M. Yasuhira,Shoji Ikeda,Tetsuo Endoh	2021	13
3	Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers IEEE Transactions on Magnetics ·H. Honjo,K. Nishioka,S. Miura,Hiroshi Naganuma,T. Watanabe,Y. Noguchi,T. V. A. Nguyen,M. Yasuhira,Shoji Ikeda,Tetsuo Endoh	2021	4
4	Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm Symposium on VLSI Technology ·Hiroshi Naganuma,S. Miura,H. Honjo,K. Nishioka,Takahito Watanabe,T. Nasuno,Hiroshi Inoue,T. V. A. Nguyen,Yasushi Endo,Y. Noguchi,M. Yasuhira,Shoji Ikeda,Tetsuo Endoh	2021	2
5	Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm IEEE Transactions on Electron Devices ·K. Nishioka,H. Honjo,Shoji Ikeda,Muhammad R. Fauzie,S. Miura,Hiroshi Inoue,T. Tanigawa,Y. Noguchi,M. Yasuhira,H. Sato,Tetsuo Endoh	2020	22
6	Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹ IEEE Transactions on Electron Devices ·S. Miura,K. Nishioka,Hiroshi Naganuma,T. V. A. Nguyen,H. Honjo,Shoji Ikeda,Daniel Schwyn,Hirofumi Inoue,M. Niwa,张云洞 Zhang Yundong,Y. Noguchi,L. Laemmer,M. Yasuhira,Tetsuo Endoh	2020	30
7	40 nm 1T–1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design IEEE Transactions on Magnetics ·Hiroki Koike,张云洞 Zhang Yundong,Daniel Schwyn,T. Nasuno,Y. Noguchi,M. Yasuhira,Guilin Lai,Yitao Ma,H. Honjo,K. Nishioka,S. Miura,Hirofumi Inoue,Shoji Ikeda,Tetsuo Endoh	2020	5
8	Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition IEEE Journal of Solid-State Circuits ·Masanori Natsui,Mohamed Gaber,H. Honjo,Daniel Schwyn,T. Nasuno,Chaoliang Zhang,张云洞 Zhang Yundong,Hirofumi Inoue,M. Niwa,Guilin Lai,Y. Noguchi,M. Yasuhira,Yitao Ma,Liang Jia-Chi,Shunsuke Fukami,H. Sato,Shoji Ikeda,Hideo Ohno,Tetsuo Endoh,Takahiro Hanyu	2020	42
9	Scalability of Quad Interface p-MTJ for 1× nm STT-MRAM with 10 ns Low Power Write Operation, 10 Years Retention and Endurance > 1011 S. Miura,K. Nishioka,Hiroshi Naganuma,T. V. A. Nguyen,H. Honjo,Shoji Ikeda,T. Watanabe,Hiroshi Inoue,M. Niwa,T. Tanigawa,Y. Noguchi,Guilin Lai,M. Yasuhira,Chunxiu X. Liu	2020	3
10	Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage Masanori Natsui,Mohamed Gaber,H. Honjo,Takahiro Watanabe,T. Nasuno,C. Zhang,T. Tanigawa,Hiroshi Inoue,M. Niwa,Guilin Lai,Y. Noguchi,M. Yasuhira,Yitao Ma,Liang Jia-Chi,Shunsuke Fukami,H. Sato,Shoji Ikeda,Hideo Ohno,Tetsuo Endoh,Takahiro Hanyu	2020	13
11	A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications IEEE Journal of Solid-State Circuits ·Masanori Natsui,Y. Noguchi,M. Yasuhira,H. Sato,Shoji Ikeda,Hideo Ohno,Tetsuo Endoh,Takahiro Hanyu,Daisuke Suzuki,Mohamed Gaber,Daniel Schwyn,H. Honjo,Hiroki Koike,T. Nasuno,Yitao Ma,张云洞 Zhang Yundong	2019	41
12	12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz Masanori Natsui,Daisuke Suzuki,Mohamed Gaber,Daniel Schwyn,H. Honjo,Hiroki Koike,T. Nasuno,Yitao Ma,张云洞 Zhang Yundong,Y. Noguchi,M. Yasuhira,H. Sato,Shoji Ikeda,Hideo Ohno,Tetsuo Endoh,Takahiro Hanyu	2019	15
13	Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm K. Nishioka,H. Honjo,Shoji Ikeda,Takeshi Watanabe,S. Miura,Hiroshi Inoue,T. Tanigawa,Y. Noguchi,M. Yasuhira,H. Sato,Tetsuo Endoh	2019	22
14	High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions 2018 IEEE International Magnetics Conference (INTERMAG) ·H. Honjo,Shoji Ikeda,Hiroshi Sato,K. Nishioka,Takeshi Watanabe,Satoshi Miura,T. Nasuno,Y. Noguchi,Naoyuki Ohnishi,M. Yasuhira,T. Tanigawa,Hiroki Koike,M. Muraguchi,M. Niwa,Hideo Ohno,Tetsuo Endoh	2018	1
15	14ns write speed 128Mb density Embedded STT-MRAM with endurance>10¹⁰ and 10yrs retention@85°C using novel low damage MTJ integration process H. Sato,H. Honjo,Muhammad R. Fauzie,M. Niwa,Hiroki Koike,S. Miura,Takashi Saito,Hiroshi Inoue,T. Nasuno,T. Tanigawa,Y. Noguchi,Guilin Lai,M. Yasuhira,Shoji Ikeda,P Y C Lee,Katie Labbe,Koji Yamashita,Edward P. Goehring,Ryo Tamura,Tetsuo Endoh	2018	45
16	Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer IEEE Transactions on Magnetics ·H. Honjo,Shoji Ikeda,H. Sato,K. Nishioka,T. Watanabe,S. Miura,T. Nasuno,Y. Noguchi,M. Yasuhira,T. Tanigawa,Hiroki Koike,Hiroshi Inoue,M. Muraguchi,M. Niwa,Hideo Ohno,Tetsuo Endoh	2017	21
17	Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer AIP Advances ·H. Honjo,Shoji Ikeda,H. Sato,A. Kalda,S. Miura,T. Nasuno,Y. Noguchi,M. Yasuhira,T. Tanigawa,Hiroki Koike,M. Muraguchi,M. Niwa,Keita Ito,Hideo Ohno,Tetsuo Endoh	2017	9
18	Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip Hiroki Koike,S. Miura,H. Honjo,Daniel Schwyn,H. Sato,María Sofia Juaneda-RuizFunes,T. Nasuno,Y. Noguchi,M. Yasuhira,张云洞 Zhang Yundong,M. Muraguchi,M. Niwa,Kenchi Ito,Shoji Ikeda,Hideo Ohno,Tetsuo Endoh	2016	9
19	10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control H. Honjo,T. Tanigawa,Hiroki Koike,M. Muraguchi,M. Niwa,Keita Ito,Hideo Ohno,Katerine Licon,H. Sato,Shoji Ikeda,Shūichi Satō,A. Kalda,S. Miura,T. Nasuno,Y. Noguchi,M. Yasuhira	2015	29
20	An 8-bit 20MHz Subranging ADC with Internal Clamp and S/H Circuits Ryo KINUGAWA,Susana Tota Pace de Domínguez Soler,Thales M. Junqueira,Y. Noguchi	1990	1

About Y. Noguchi

Y. Noguchi is a scholar working on Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 23 papers that have together received 369 indexed citations. Recurring topics across this work include Magnetic properties of thin films (18 papers), Ferroelectric and Negative Capacitance Devices (10 papers), Advanced Memory and Neural Computing (9 papers), Magnetic Properties and Applications (7 papers), Physics of Superconductivity and Magnetism (4 papers), Semiconductor materials and devices (4 papers), Quantum and electron transport phenomena (3 papers) and ZnO doping and properties (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (235 citations), Condensed Matter Physics (58 citations) and Electrical and Electronic Engineering (245 citations). Y. Noguchi has collaborated with scholars based in Japan. Frequent co-authors include H. Honjo, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh, H. Sato, S. Miura, T. Nasuno, M. Niwa, Hiroki Koike and Hideo Ohno. Their work appears in journals such as IEEE Transactions on Magnetics, IEEE Transactions on Electron Devices, IEEE Journal of Solid-State Circuits, AIP Advances and 2018 IEEE International Magnetics Conference (INTERMAG).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact