Y. Noguchi

574 total citations
23 papers, 369 citations indexed

About

Y. Noguchi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Y. Noguchi has authored 23 papers receiving a total of 369 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 16 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Y. Noguchi's work include Magnetic properties of thin films (18 papers), Ferroelectric and Negative Capacitance Devices (10 papers) and Advanced Memory and Neural Computing (9 papers). Y. Noguchi is often cited by papers focused on Magnetic properties of thin films (18 papers), Ferroelectric and Negative Capacitance Devices (10 papers) and Advanced Memory and Neural Computing (9 papers). Y. Noguchi collaborates with scholars based in Japan. Y. Noguchi's co-authors include H. Honjo, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh, H. Sato, S. Miura, T. Nasuno, M. Niwa, Hiroki Koike and Hideo Ohno and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Transactions on Magnetics.

In The Last Decade

Y. Noguchi

23 papers receiving 356 citations

Peers

Y. Noguchi
M. Yasuhira Japan
T. Nasuno Japan
Yushi Kato Japan
Xiaoxuan Zhao China
Kuei‐Hung Shen Taiwan
S. Van Beek Belgium
W. Kim Belgium
Grégory Di Pendina France
Denny D. Tang Taiwan
Zongxia Guo China
M. Yasuhira Japan
Y. Noguchi
Citations per year, relative to Y. Noguchi Y. Noguchi (= 1×) peers M. Yasuhira

Countries citing papers authored by Y. Noguchi

Since Specialization
Citations

This map shows the geographic impact of Y. Noguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Noguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Noguchi more than expected).

Fields of papers citing papers by Y. Noguchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Noguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Noguchi. The network helps show where Y. Noguchi may publish in the future.

Co-authorship network of co-authors of Y. Noguchi

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Noguchi. A scholar is included among the top collaborators of Y. Noguchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Noguchi. Y. Noguchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Honjo, H., K. Nishioka, S. Miura, et al.. (2022). 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM. 2022 International Electron Devices Meeting (IEDM). 10.3.1–10.3.4. 2 indexed citations
2.
Nishioka, K., S. Miura, H. Honjo, et al.. (2021). First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM. IEEE Transactions on Electron Devices. 68(6). 2680–2685. 13 indexed citations
3.
Honjo, H., K. Nishioka, S. Miura, et al.. (2021). Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers. IEEE Transactions on Magnetics. 58(2). 1–5. 4 indexed citations
4.
Naganuma, Hiroshi, S. Miura, H. Honjo, et al.. (2021). Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm. Symposium on VLSI Technology. 1–2. 2 indexed citations
5.
Nishioka, K., H. Honjo, Shoji Ikeda, et al.. (2020). Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm. IEEE Transactions on Electron Devices. 67(3). 995–1000. 22 indexed citations
6.
Miura, S., K. Nishioka, Hiroshi Naganuma, et al.. (2020). Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹. IEEE Transactions on Electron Devices. 67(12). 5368–5373. 30 indexed citations
7.
Koike, Hiroki, T. Nasuno, Y. Noguchi, et al.. (2020). 40 nm 1T–1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design. IEEE Transactions on Magnetics. 57(3). 1–9. 5 indexed citations
8.
Natsui, Masanori, H. Honjo, T. Nasuno, et al.. (2020). Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition. IEEE Journal of Solid-State Circuits. 56(4). 1116–1128. 42 indexed citations
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Natsui, Masanori, H. Honjo, Takahiro Watanabe, et al.. (2020). Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. 1–2. 13 indexed citations
11.
Natsui, Masanori, Y. Noguchi, M. Yasuhira, et al.. (2019). A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications. IEEE Journal of Solid-State Circuits. 54(11). 2991–3004. 41 indexed citations
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Honjo, H., Shoji Ikeda, Hiroshi Sato, et al.. (2018). High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions. 2018 IEEE International Magnetics Conference (INTERMAG). 1–1. 1 indexed citations
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Honjo, H., Shoji Ikeda, H. Sato, et al.. (2017). Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer. IEEE Transactions on Magnetics. 53(11). 1–4. 21 indexed citations
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Koike, Hiroki, S. Miura, H. Honjo, et al.. (2016). Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip. 1–4. 9 indexed citations
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Noguchi, Y., et al.. (1990). An 8-bit 20MHz Subranging ADC with Internal Clamp and S/H Circuits. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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