T. Nasuno

457 citations

17 papers · 287 indexed · h-index 10

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Magnetic properties of thin films
Hardware and Architecture

Papers in

Atomic and Molecular Physics, and Optics 14
- Magnetic properties of thin films 14
- Quantum and electron transport phenomena 2
Electronic, Optical and Magnetic Materials 8
- Magnetic Properties and Applications 7

Co-authors: H. Honjo M. Yasuhira Y. Noguchi Shoji Ikeda Tetsuo Endoh H. Sato Hiroki Koike Hideo Ohno
Journals: IEEE Transactions on Magnetics (3 papers)IEEE Journal of Solid-State Circuits (2 papers)AIP Advances (1 paper)IEEE Transactions on Electron Devices (1 paper)2018 IEEE International Magnetics Conference (INTERMAG) (1 paper)
Partner nations: Japan

In The Last Decade

T. Nasuno

17 papers receiving 277 citations

Peers

Countries citing papers authored by T. Nasuno

Since Specialization

Citations

This map shows the geographic impact of T. Nasuno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Nasuno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Nasuno more than expected).

Fields of papers citing papers by T. Nasuno

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Nasuno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Nasuno. The network helps show where T. Nasuno may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Nasuno, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Nasuno Line = papers co-authored together T. Nasuno links everyone, so they are left out of the graph.

All Works

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17 of 17 papers shown

#	Work
1	25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 10⁷ for eFlash-type MRAM 2022 International Electron Devices Meeting (IEDM) ·H. Honjo, K. Nishioka, S. Miura, Hiroshi Naganuma, Muhammad R. Fauzie, T. Nasuno, T. Tanigawa, Y. Noguchi, Hiroshi Inoue, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	2022	2
2	First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM IEEE Transactions on Electron Devices ·K. Nishioka, S. Miura, H. Honjo, Hiroshi Inoue, Muhammad R. Fauzie, T. Nasuno, Hiroshi Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	2021	13
3	Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm Symposium on VLSI Technology ·Hiroshi Naganuma, S. Miura, H. Honjo, K. Nishioka, Takahito Watanabe, T. Nasuno, Hiroshi Inoue, T. V. A. Nguyen, Yasushi Endo, Y. Noguchi, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	2021	2
4	40 nm 1T–1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design IEEE Transactions on Magnetics ·Hiroki Koike, 张云洞 Zhang Yundong, Daniel Schwyn, T. Nasuno, Y. Noguchi, M. Yasuhira, Guilin Lai, Yitao Ma, H. Honjo, K. Nishioka, S. Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh	2020	5
5	Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition IEEE Journal of Solid-State Circuits ·Masanori Natsui, Mohamed Gaber, H. Honjo, Daniel Schwyn, T. Nasuno, Chaoliang Zhang, 张云洞 Zhang Yundong, Hirofumi Inoue, M. Niwa, Guilin Lai, Y. Noguchi, M. Yasuhira, Yitao Ma, Liang Jia-Chi, Shunsuke Fukami, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu	2020	42
6	Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage Masanori Natsui, Mohamed Gaber, H. Honjo, Takahiro Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, Hiroshi Inoue, M. Niwa, Guilin Lai, Y. Noguchi, M. Yasuhira, Yitao Ma, Liang Jia-Chi, Shunsuke Fukami, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu	2020	13
7	Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice Hiroki Koike, 张云洞 Zhang Yundong, Daniel Schwyn, T. Nasuno, Y. Noguchi, M. Yasuhira, Guilin Lai, Yitao Ma, H. Honjo, K. Nishioka, S. Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh	2020	5
8	A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications IEEE Journal of Solid-State Circuits ·Masanori Natsui, Y. Noguchi, M. Yasuhira, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu, Daisuke Suzuki, Mohamed Gaber, Daniel Schwyn, H. Honjo, Hiroki Koike, T. Nasuno, Yitao Ma, 张云洞 Zhang Yundong	2019	41
9	12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz Masanori Natsui, Daisuke Suzuki, Mohamed Gaber, Daniel Schwyn, H. Honjo, Hiroki Koike, T. Nasuno, Yitao Ma, 张云洞 Zhang Yundong, Y. Noguchi, M. Yasuhira, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu	2019	15
10	High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions 2018 IEEE International Magnetics Conference (INTERMAG) ·H. Honjo, Shoji Ikeda, Hiroshi Sato, K. Nishioka, Takeshi Watanabe, Satoshi Miura, T. Nasuno, Y. Noguchi, Naoyuki Ohnishi, M. Yasuhira, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Hideo Ohno, Tetsuo Endoh	2018	1
11	14ns write speed 128Mb density Embedded STT-MRAM with endurance>10¹⁰ and 10yrs retention@85°C using novel low damage MTJ integration process H. Sato, H. Honjo, Muhammad R. Fauzie, M. Niwa, Hiroki Koike, S. Miura, Takashi Saito, Hiroshi Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, Guilin Lai, M. Yasuhira, Shoji Ikeda, P Y C Lee, Katie Labbe, Koji Yamashita, Edward P. Goehring, Ryo Tamura, Tetsuo Endoh	2018	45
12	Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer IEEE Transactions on Magnetics ·H. Honjo, Shoji Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, Hiroshi Inoue, M. Muraguchi, M. Niwa, Hideo Ohno, Tetsuo Endoh	2017	21
13	Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer AIP Advances ·H. Honjo, Shoji Ikeda, H. Sato, A. Kalda, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Keita Ito, Hideo Ohno, Tetsuo Endoh	2017	9
14	Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip Hiroki Koike, S. Miura, H. Honjo, Daniel Schwyn, H. Sato, María Sofia Juaneda-RuizFunes, T. Nasuno, Y. Noguchi, M. Yasuhira, 张云洞 Zhang Yundong, M. Muraguchi, M. Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh	2016	9
15	Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition IEEE Transactions on Magnetics ·H. Honjo, Shoji Ikeda, H. Sato, S. Sato, Muhammad R. Fauzie, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Keita Ito, Hideo Ohno, Tetsuo Endoh	2016	20
16	10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control H. Honjo, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Keita Ito, Hideo Ohno, Katerine Licon, H. Sato, Shoji Ikeda, Shūichi Satō, A. Kalda, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira	2015	29
17	1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance Hiroki Koike, S. Miura, H. Honjo, Elahe Roudi, H. Sato, María Sofia Juaneda-RuizFunes, T. Nasuno, Y. Noguchi, M. Yasuhira, 张云洞 Zhang Yundong, M. Muraguchi, M. Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh	2015	15

About T. Nasuno

T. Nasuno is a scholar working on Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry, having authored 17 papers that have together received 287 indexed citations. Recurring topics across this work include Magnetic properties of thin films (14 papers), Magnetic Properties and Applications (7 papers), Advanced Memory and Neural Computing (7 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Semiconductor materials and devices (3 papers), ZnO doping and properties (3 papers), Physics of Superconductivity and Magnetism (2 papers) and Quantum and electron transport phenomena (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (183 citations), Hardware and Architecture (25 citations), Condensed Matter Physics (43 citations), Electrical and Electronic Engineering (189 citations) and Electronic, Optical and Magnetic Materials (59 citations). T. Nasuno has collaborated with scholars based in Japan. Frequent co-authors include H. Honjo, M. Yasuhira, Y. Noguchi, Shoji Ikeda, Tetsuo Endoh, H. Sato, Hiroki Koike, Hideo Ohno, M. Niwa and S. Miura. Their work appears in journals such as IEEE Transactions on Magnetics, IEEE Journal of Solid-State Circuits, AIP Advances, IEEE Transactions on Electron Devices and 2018 IEEE International Magnetics Conference (INTERMAG).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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