Xiuyan Li

1.7k total citations
88 papers, 1.4k citations indexed

About

Xiuyan Li is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Xiuyan Li has authored 88 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 32 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Xiuyan Li's work include Semiconductor materials and devices (28 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and Advanced Memory and Neural Computing (11 papers). Xiuyan Li is often cited by papers focused on Semiconductor materials and devices (28 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and Advanced Memory and Neural Computing (11 papers). Xiuyan Li collaborates with scholars based in China, Japan and United States. Xiuyan Li's co-authors include Shao‐Ding Liu, Zhi Yang, Ruiping Liu, Jingquan Liu, Yue Shi, Ruping Liu, Liang He, Luhai Li, Wei Wang and Fenlan Xu and has published in prestigious journals such as Nature Communications, ACS Nano and Applied Physics Letters.

In The Last Decade

Xiuyan Li

75 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Xiuyan Li China	18	800	713	255	251	225	88	1.4k
Houfang Liu China	20	662 0.8×	683 1.0×	133 0.5×	203 0.8×	365 1.6×	76	1.4k
Shaolei Wang China	25	951 1.2×	763 1.1×	273 1.1×	304 1.2×	496 2.2×	54	2.1k
Donghwi Cho South Korea	21	969 1.2×	576 0.8×	123 0.5×	336 1.3×	321 1.4×	46	1.5k
Lin Jia United States	11	1.2k 1.4×	469 0.7×	164 0.6×	373 1.5×	152 0.7×	22	1.5k
Sami Hage‐Ali France	16	855 1.1×	515 0.7×	126 0.5×	153 0.6×	152 0.7×	55	1.1k
Yiyao Peng China	13	898 1.1×	579 0.8×	146 0.6×	290 1.2×	440 2.0×	19	1.3k
Ji Woong Yu South Korea	12	783 1.0×	416 0.6×	204 0.8×	398 1.6×	335 1.5×	24	1.2k
Yoonyoung Chung South Korea	18	1.1k 1.3×	991 1.4×	220 0.9×	551 2.2×	400 1.8×	53	1.9k
Truong‐Son Dinh Le South Korea	15	989 1.2×	544 0.8×	292 1.1×	227 0.9×	412 1.8×	23	1.4k
Tuan‐Khoa Nguyen Australia	25	1.1k 1.4×	1.1k 1.5×	110 0.4×	234 0.9×	558 2.5×	96	2.0k

Countries citing papers authored by Xiuyan Li

Since Specialization

Citations

This map shows the geographic impact of Xiuyan Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiuyan Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiuyan Li more than expected).

Fields of papers citing papers by Xiuyan Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiuyan Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiuyan Li. The network helps show where Xiuyan Li may publish in the future.

Co-authorship network of co-authors of Xiuyan Li

This figure shows the co-authorship network connecting the top 25 collaborators of Xiuyan Li. A scholar is included among the top collaborators of Xiuyan Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xiuyan Li. Xiuyan Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Danyang, et al.. (2025). Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor. IEEE Transactions on Electron Devices. 72(9). 4872–4877.

Wang, Ziheng, Kai Jiang, Yuan Li, et al.. (2025). In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility. IEEE Electron Device Letters. 46(3). 412–415. 1 indexed citations

Fieback, Moritz, Mottaqiallah Taouil, Xiuyan Li, et al.. (2025). Device-Aware Test for Anomalous Charge Trapping in FeFETs. 635–641. 1 indexed citations

Chen, Danyang, Jiahui Zhang, Jingquan Liu, et al.. (2025). Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films. Nature Communications. 16(1). 4232–4232. 3 indexed citations

Chen, Danyang, Qiang Gao, Jingquan Liu, et al.. (2025). Unveiling the polarization switching pathway through tetragonal phase as a metastable intermediate state in ferroelectric HfxZr1-xO2 thin film. Nature Communications. 16(1). 8188–8188.

Jiang, Kai, Shiheng Lu, Heng Wang, et al.. (2025). The Critical Role of Passivation Layer and Semiconductor Interface on the Hydrogen Stability of ALD IGZO Transistors. IEEE Transactions on Electron Devices. 72(8). 4138–4142. 1 indexed citations

Jiang, Kai, S.-H. LI, Shan‐Ting Zhang, et al.. (2025). Top-Gate Atomic-Layer-Deposited Oxide Semiconductor Transistors With Large Memory Window and Non-Ferroelectric HfO₂ Gate Stack. IEEE Electron Device Letters. 46(8). 1353–1356.

Lin, Zude, et al.. (2025). Chip-scale self-referenced thermometer based on cascaded ring resonators. Applied Physics Letters. 126(17).

Zhang, Tengteng, et al.. (2024). Coherent epitaxy of HfxZr1-xO2 thin films by high-pressure magnetron sputtering. 10. 100124–100124.

10.

Wang, Ziheng, et al.. (2024). The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization. IEEE Transactions on Electron Devices. 71(5). 3002–3008. 21 indexed citations

11.

Chen, Danyang, et al.. (2024). A metastable temperature-strain phase diagram of HfxZr1−xO2 thin films based on synchrotron-based in situ 2D GIXRD investigation. Applied Physics Letters. 125(25). 1 indexed citations

12.

Chen, Danyang, et al.. (2024). Can Interface Layer be Really Free for Hf_xZr_1-xO₂ Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel?. IEEE Electron Device Letters. 45(3). 368–371. 13 indexed citations

13.

Chen, Danyang, et al.. (2023). An energy efficient reservoir computing system based on HZO memcapacitive devices. Applied Physics Letters. 123(12). 17 indexed citations

14.

Li, Xiuyan & Akira Toriumi. (2020). Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack. Nature Communications. 11(1). 1895–1895. 16 indexed citations

15.

Lin, Zude, et al.. (2019). The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film. Semiconductor Science and Technology. 34(8). 85008–85008. 5 indexed citations

16.

Lin, Zude, et al.. (2019). The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film. Journal of Materials Science. 55(7). 2881–2890. 2 indexed citations

17.

Zhang, Qi, et al.. (2016). CeをドープしたZnOナノ粒子の光触媒活性の化学的沈殿合成と有意な増強【Powered by NICT】. Ceramics International. 42(12). 14181. 1 indexed citations

18.

Li, Xiuyan, et al.. (2012). Research of ERPs on the early process to visual spatial attention by mental abacus calculation children. Chinese Journal of School Health. 33(2). 1 indexed citations

19.

Li, Xiuyan, et al.. (2009). Analysis and Design of a Kind of Improved Parallel Resonant Converters. Journal of Electromagnetic Analysis and Application. 1(1). 66–72.

20.

Li, Xiuyan, et al.. (2009). STUDY ON CRYOGENIC TENSILE PROPERTIES OF PRECIPITATION HARDENED FV520B STEEL. Corrosion Science and Protetion Technology. 21(3). 299–301. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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