X. K. Cao

753 total citations · 1 hit paper
11 papers, 593 citations indexed

About

X. K. Cao is a scholar working on Materials Chemistry, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, X. K. Cao has authored 11 papers receiving a total of 593 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Materials Chemistry, 5 papers in Condensed Matter Physics and 2 papers in Electrical and Electronic Engineering. Recurrent topics in X. K. Cao's work include Graphene research and applications (6 papers), Diamond and Carbon-based Materials Research (5 papers) and GaN-based semiconductor devices and materials (5 papers). X. K. Cao is often cited by papers focused on Graphene research and applications (6 papers), Diamond and Carbon-based Materials Research (5 papers) and GaN-based semiconductor devices and materials (5 papers). X. K. Cao collaborates with scholars based in United States, Hong Kong and United Kingdom. X. K. Cao's co-authors include H. X. Jiang, J. Y. Lin, J. Li, S. Majety, R. Dahal, B. N. Pantha, James H. Edgar, Su‐Huai Wei, Bing Huang and Robert D. J. Oliver and has published in prestigious journals such as Science, Applied Physics Letters and Physical Review B.

In The Last Decade

X. K. Cao

11 papers receiving 581 citations

Hit Papers

Bandgap-universal passivation enables stable perovskite s... 2024 2026 2025 2024 25 50 75

Peers

X. K. Cao
In-Hwan Lee South Korea
Christopher Metting United States
C. Boemare Portugal
Sandeep Sohal United States
J. H. Leem South Korea
In-Hwan Lee South Korea
X. K. Cao
Citations per year, relative to X. K. Cao X. K. Cao (= 1×) peers In-Hwan Lee

Countries citing papers authored by X. K. Cao

Since Specialization
Citations

This map shows the geographic impact of X. K. Cao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. K. Cao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. K. Cao more than expected).

Fields of papers citing papers by X. K. Cao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. K. Cao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. K. Cao. The network helps show where X. K. Cao may publish in the future.

Co-authorship network of co-authors of X. K. Cao

This figure shows the co-authorship network connecting the top 25 collaborators of X. K. Cao. A scholar is included among the top collaborators of X. K. Cao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. K. Cao. X. K. Cao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

11 of 11 papers shown
1.
Lin, Yen‐Hung, Vikram Vikram, Fengning Yang, et al.. (2024). Bandgap-universal passivation enables stable perovskite solar cells with low photovoltage loss. Science. 384(6697). 767–775. 85 indexed citations breakdown →
2.
Li, J., et al.. (2016). Nature of exciton transitions in hexagonal boron nitride. Applied Physics Letters. 108(12). 25 indexed citations
3.
Cao, X. K., S. Majety, J. Li, J. Y. Lin, & H. X. Jiang. (2013). Optoelectronic properties of hexagonal boron nitride epilayers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8631. 863128–863128. 6 indexed citations
4.
Cao, X. K., et al.. (2013). Two-dimensional excitons in three-dimensional hexagonal boron nitride. Applied Physics Letters. 103(19). 72 indexed citations
5.
Huang, Bing, X. K. Cao, H. X. Jiang, J. Y. Lin, & Su‐Huai Wei. (2012). Origin of the significantly enhanced optical transitions in layered boron nitride. Physical Review B. 86(15). 48 indexed citations
6.
Majety, S., J. Li, X. K. Cao, et al.. (2012). Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8507. 85070R–85070R. 5 indexed citations
7.
Majety, S., J. Li, X. K. Cao, et al.. (2012). Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics. Applied Physics Letters. 100(6). 98 indexed citations
8.
Majety, S., X. K. Cao, J. Li, et al.. (2012). Band-edge transitions in hexagonal boron nitride epilayers. Applied Physics Letters. 101(5). 51110–51110. 43 indexed citations
9.
Dahal, R., J. Li, S. Majety, et al.. (2011). Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material. Applied Physics Letters. 98(21). 180 indexed citations
10.
Cao, X. K., J. Li, J. Y. Lin, et al.. (2011). Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates. Applied Physics Letters. 98(8). 11 indexed citations
11.
Majety, S., X. K. Cao, R. Dahal, et al.. (2011). Semiconducting hexagonal boron nitride for deep ultraviolet photonics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8268. 82682R–82682R. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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