Walter E. Dahlke

1.3k total citations
22 papers, 940 citations indexed

About

Walter E. Dahlke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Walter E. Dahlke has authored 22 papers receiving a total of 940 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in Walter E. Dahlke's work include Semiconductor materials and devices (19 papers), Semiconductor materials and interfaces (15 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Walter E. Dahlke is often cited by papers focused on Semiconductor materials and devices (19 papers), Semiconductor materials and interfaces (15 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Walter E. Dahlke collaborates with scholars based in United States and Japan. Walter E. Dahlke's co-authors include Horst Rothe, S. Kar, Simon M. Sze, Vikram Kumar, David W. Greve, Vikram Kumar, Ashutosh Kumar and Sanjay Jain and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Walter E. Dahlke

22 papers receiving 884 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Walter E. Dahlke United States 12 886 577 177 88 25 22 940
K.S. Champlin United States 16 687 0.8× 420 0.7× 91 0.5× 95 1.1× 31 1.2× 54 854
N. Bar-Chaim United States 18 824 0.9× 606 1.1× 107 0.6× 84 1.0× 34 1.4× 59 921
J. Yasaitis United States 12 617 0.7× 334 0.6× 127 0.7× 210 2.4× 26 1.0× 31 693
D. Greenberg United States 20 1.0k 1.1× 229 0.4× 89 0.5× 107 1.2× 83 3.3× 54 1.1k
K.R. Hofmann Germany 17 931 1.1× 315 0.5× 253 1.4× 95 1.1× 29 1.2× 64 1.0k
J.Y.-C. Sun United States 25 1.9k 2.1× 487 0.8× 215 1.2× 167 1.9× 35 1.4× 102 2.0k
CR Stanley United Kingdom 10 375 0.4× 436 0.8× 200 1.1× 108 1.2× 72 2.9× 40 602
T. Kure Japan 17 921 1.0× 218 0.4× 161 0.9× 146 1.7× 60 2.4× 69 1.0k
M. Ershov Japan 16 790 0.9× 505 0.9× 143 0.8× 71 0.8× 47 1.9× 53 903
P. Dowd United States 13 527 0.6× 457 0.8× 122 0.7× 112 1.3× 36 1.4× 37 622

Countries citing papers authored by Walter E. Dahlke

Since Specialization
Citations

This map shows the geographic impact of Walter E. Dahlke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Walter E. Dahlke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Walter E. Dahlke more than expected).

Fields of papers citing papers by Walter E. Dahlke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Walter E. Dahlke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Walter E. Dahlke. The network helps show where Walter E. Dahlke may publish in the future.

Co-authorship network of co-authors of Walter E. Dahlke

This figure shows the co-authorship network connecting the top 25 collaborators of Walter E. Dahlke. A scholar is included among the top collaborators of Walter E. Dahlke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Walter E. Dahlke. Walter E. Dahlke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dahlke, Walter E. & Sanjay Jain. (1986). Relaxation of optically induced inversion layers in metal-insulator-semiconductor tunnel diodes. Journal of Applied Physics. 59(4). 1264–1271. 1 indexed citations
2.
Jain, Sanjay & Walter E. Dahlke. (1986). Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures. Solid-State Electronics. 29(6). 597–606. 5 indexed citations
3.
Dahlke, Walter E., et al.. (1983). Transmission coefficient and tunneling relaxation time in MIS tunnel diodes. Solid-State Electronics. 26(11). 1129–1129. 3 indexed citations
4.
Dahlke, Walter E., et al.. (1983). Dark-capacitance transients in MIS tunnel diodes. Solid-State Electronics. 26(5). 465–472. 3 indexed citations
5.
Greve, David W. & Walter E. Dahlke. (1980). Photoionization cross section and density of interface states in MOS structures. Applied Physics Letters. 36(12). 1002–1004. 12 indexed citations
6.
Dahlke, Walter E. & David W. Greve. (1979). Statistics of trap photoemission in MIS tunnel diodes. Solid-State Electronics. 22(10). 893–903. 14 indexed citations
7.
Kumar, Vikram & Walter E. Dahlke. (1977). Low-frequency noise in Cr—SiO2—N-Si tunnel diodes. IEEE Transactions on Electron Devices. 24(2). 146–153. 16 indexed citations
8.
Kumar, Vikram & Walter E. Dahlke. (1977). Characteristics of Cr-SiO2-nSi tunnel diodes. Solid-State Electronics. 20(2). 143–152. 48 indexed citations
9.
Kumar, Vikram, et al.. (1976). Effects of Oxide Thickness and Substrate Dopants on Irradiated MOS Capacitors. Journal of The Electrochemical Society. 123(4). 578–579. 4 indexed citations
10.
Kumar, Ashutosh, et al.. (1974). Effects of ionizing radiation on thin-oxide (20–1500 Å) MOS capacitors. Journal of Applied Physics. 45(11). 4894–4898. 21 indexed citations
11.
Kar, S. & Walter E. Dahlke. (1972). Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si. Solid-State Electronics. 15(2). 221–237. 208 indexed citations
12.
Kar, S. & Walter E. Dahlke. (1972). Potentials and direct current in Si-(20 to 40 Å)SiO2-metal structures. Solid-State Electronics. 15(8). 869–875. 28 indexed citations
13.
Kar, S. & Walter E. Dahlke. (1971). METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES. Applied Physics Letters. 18(9). 401–403. 28 indexed citations
14.
Dahlke, Walter E., et al.. (1970). Theory of tunneling into interface states. Solid-State Electronics. 13(11). 1483–1503. 155 indexed citations
15.
Dahlke, Walter E., et al.. (1967). Interface state tunneling. Solid State Communications. 5(10). x–xi. 1 indexed citations
16.
Dahlke, Walter E. & Simon M. Sze. (1967). Tunneling in metal-oxide-silicon structures. Solid-State Electronics. 10(8). 865–873. 92 indexed citations
17.
Dahlke, Walter E.. (1967). TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES. Applied Physics Letters. 10(10). 261–262. 17 indexed citations
18.
Dahlke, Walter E., et al.. (1960). Residual gas pressure in electron tubes. Vacuum. 10(1-2). 3–4. 2 indexed citations
19.
Dahlke, Walter E., et al.. (1958). A Cathode Test Utilizing Noise Measurements. Proceedings of the IRE. 46(9). 1639–1645. 1 indexed citations
20.
Rothe, Horst & Walter E. Dahlke. (1956). Theory of Noisy Fourpoles. Proceedings of the IRE. 44(6). 811–818. 274 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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