S. Kar

1.2k total citations
54 papers, 961 citations indexed

About

S. Kar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Kar has authored 54 papers receiving a total of 961 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in S. Kar's work include Semiconductor materials and devices (38 papers), Semiconductor materials and interfaces (30 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). S. Kar is often cited by papers focused on Semiconductor materials and devices (38 papers), Semiconductor materials and interfaces (30 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). S. Kar collaborates with scholars based in India, United States and Germany. S. Kar's co-authors include Walter E. Dahlke, Shikha Varma, S. Ashok, E. Klausmann, Subramania Ranganathan, D. Vuillaume, Corinne Miramond, Stephen J. Fonash, Shaloo Rakheja and D. Amaranatha Reddy and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. Kar

52 papers receiving 920 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Kar India	17	877	634	273	54	41	54	961
M. Leibovitch Israel	15	423 0.5×	268 0.4×	276 1.0×	53 1.0×	35 0.9×	32	554
A. Soukopp Germany	13	572 0.7×	438 0.7×	195 0.7×	281 5.2×	20 0.5×	14	689
P. Panayotatos United States	11	361 0.4×	260 0.4×	117 0.4×	59 1.1×	22 0.5×	36	441
K. Glöckler Germany	9	574 0.7×	498 0.8×	204 0.7×	326 6.0×	19 0.5×	10	714
Hernán Santos Spain	11	297 0.3×	313 0.5×	540 2.0×	120 2.2×	38 0.9×	30	659
Paul Frank Austria	10	314 0.4×	166 0.3×	201 0.7×	103 1.9×	21 0.5×	11	441
G. Pourtois Belgium	14	577 0.7×	349 0.6×	709 2.6×	74 1.4×	72 1.8×	20	987
S. Berkebile Austria	13	431 0.5×	252 0.4×	232 0.8×	155 2.9×	35 0.9×	18	570
V. G. Talalaev Germany	16	578 0.7×	557 0.9×	534 2.0×	303 5.6×	22 0.5×	68	909
P. Hesto France	15	532 0.6×	354 0.6×	143 0.5×	84 1.6×	34 0.8×	62	688

Countries citing papers authored by S. Kar

Since Specialization

Citations

This map shows the geographic impact of S. Kar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Kar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Kar more than expected).

Fields of papers citing papers by S. Kar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Kar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Kar. The network helps show where S. Kar may publish in the future.

Co-authorship network of co-authors of S. Kar

This figure shows the co-authorship network connecting the top 25 collaborators of S. Kar. A scholar is included among the top collaborators of S. Kar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Kar. S. Kar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Kar, S.. (2016). Selected Success Stories from Twenty Years of High-k Gate Dielectric Research. ECS Transactions. 75(5). 245–261. 2 indexed citations

Kar, S.. (2011). A Drain Current - Drain Voltage Relation for MOSFETs with High-k Gate Stacks. ECS Transactions. 41(3). 389–400.

Kar, S., et al.. (2008). Extraction of Trap Parameters for High-Κ Gate Stacks. ECS Transactions. 16(5). 111–120. 1 indexed citations

Kar, S., et al.. (2008). Modelling of Layers and Traps in High-Κ Gate Stacks and Energy Band and Equivalent Circuit Representations. ECS Transactions. 16(5). 443–453. 2 indexed citations

Kar, S., et al.. (2006). Physics and Technology of High-k Gate Dielectrics 4. NPARC. 20 indexed citations

Kar, S.. (2005). Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46–1.93 nm) high-K gate dielectrics. Thin Solid Films. 504(1-2). 178–182. 3 indexed citations

Kar, S.. (2004). Determination of the Gate Dielectric Capacitance of Ultrathin High-k Layers. Journal of The Electrochemical Society. 151(7). G476–G476. 1 indexed citations

Behera, Laxmidhar, et al.. (2004). ANNUAL REPORT FOR 2003-2004. 5 indexed citations

Kar, S.. (2003). Extraction of the capacitance of ultrathin high-K gate dielectrics. IEEE Transactions on Electron Devices. 50(10). 2112–2119. 38 indexed citations

10.

Kar, S., Corinne Miramond, & D. Vuillaume. (2001). Properties of electronic traps at silicon/1-octadecene interfaces. Applied Physics Letters. 78(9). 1288–1290. 42 indexed citations

11.

Kar, S., P. Zaumseil, & S. Ashok. (1997). An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 483–488. 1 indexed citations

12.

Kar, S., et al.. (1987). Characteristics of the Si-SiO2 interface states in thin (70–230 Å) oxide structures. Journal of Applied Physics. 61(12). 5353–5359. 51 indexed citations

13.

Kar, S., et al.. (1987). An investigation of optically activated Si—SiO₂interface states in metal-oxide-silicon structures. IEEE Transactions on Electron Devices. 34(2). 420–426. 1 indexed citations

14.

Kar, S. & Shikha Varma. (1985). Determination of silicon-silicon dioxide interface state properties from admittance measurements under illumination. Journal of Applied Physics. 58(11). 4256–4266. 69 indexed citations

15.

Kar, S. & Shikha Varma. (1983). Determination of semiconductor quasi-Fermi level separation under illumination. Journal of Applied Physics. 54(4). 1988–1990. 5 indexed citations

16.

Kar, S.. (1978). On the role of interface states in MOS solar cells. Journal of Applied Physics. 49(10). 5278–5283. 12 indexed citations

17.

Klausmann, E., et al.. (1975). Determination of the semiconductor doping profile right up to its surface using the MIS capacitor. Solid-State Electronics. 18(2). 189–198. 51 indexed citations

18.

Ranganathan, Shoba & S. Kar. (1971). On the transformation of tetraphenylcyclopentadienone to pentaphenylpyrrole in boiling nitrobenzene. Tetrahedron Letters. 12(21). 1855–1858. 2 indexed citations

19.

Kar, S. & Walter E. Dahlke. (1971). METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES. Applied Physics Letters. 18(9). 401–403. 28 indexed citations

20.

Ranganathan, Subramania & S. Kar. (1970). Novel cis-hydroxylation with nitrous acid. The Journal of Organic Chemistry. 35(11). 3962–3964. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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