V. T. Rajan

18 papers receiving 748 citations

Hit Papers

Magnetic Susceptibility and Specific Heat of the Coqblin-...19832026199720111983100200300400

Peers

V. T. Rajan
Comparison fields: 5 of 40
  • Condensed Matter Physics 600
  • Electronic, Optical and Magnetic Materials 438
  • Atomic and Molecular Physics, and Optics 212
  • Materials Chemistry 129
  • Electrical and Electronic Engineering 55
Replace S. Donovan with:
S. Donovan United States
Tomohiko Kuwai Japan
Susumu Chikazawa Japan
G. Reményi France
Takahiro Misawa Japan
A. V. Semeno Russia
J. A. Fendrich United States
Jonathan E. Moussa United States
D. Bertrand France
J. Tuchendler France
V. T. Rajan relative to S. Donovan United States S. Donovan's profile →
Citations per field
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S. Donovan · 1×
Citations per year

Countries citing papers authored by V. T. Rajan

Since Specialization
Citations

This map shows the geographic impact of V. T. Rajan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. T. Rajan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. T. Rajan more than expected).

Fields of papers citing papers by V. T. Rajan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. T. Rajan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. T. Rajan. The network helps show where V. T. Rajan may publish in the future.

Co-authorship network of co-authors of V. T. Rajan

This figure shows the co-authorship network connecting the top 25 collaborators of V. T. Rajan. A scholar is included among the top collaborators of V. T. Rajan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. T. Rajan. V. T. Rajan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
#WorkIndexed citations
1 2
2 21
3 7
4
Magnetic Susceptibility and Specific Heat of the Coqblin-Schrieffer Modelbreakdown →
461
5 6
6 103
7 1
8 18
9 19
10 11
11 4
12 18
13 6
14 6
15 18
16 36
17 26
18 7

About V. T. Rajan

V. T. Rajan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Hardware and Architecture, having authored 18 papers that have together received 770 indexed citations. Recurring topics across this work include Rare-earth and actinide compounds (4 papers), Material Dynamics and Properties (4 papers) and Advanced Chemical Physics Studies (4 papers). The work is most often cited by research in Condensed Matter Physics (600 citations), Electronic, Optical and Magnetic Materials (438 citations) and Atomic and Molecular Physics, and Optics (212 citations). V. T. Rajan has collaborated with scholars based in United States and Germany. Frequent co-authors include Natan Andrei, J. H. Lowenstein, Chia-Wei Woo, L. M. Falicov, Félix Ynduráin, Peter F. Sweeney, Michael Hind, V. T. Rajan, Peter S. Riseborough and M. Avignon. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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