F. Engelmark

529 total citations
14 papers, 436 citations indexed

About

F. Engelmark is a scholar working on Mechanics of Materials, Biomedical Engineering and Condensed Matter Physics. According to data from OpenAlex, F. Engelmark has authored 14 papers receiving a total of 436 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Mechanics of Materials, 10 papers in Biomedical Engineering and 9 papers in Condensed Matter Physics. Recurrent topics in F. Engelmark's work include Acoustic Wave Resonator Technologies (10 papers), GaN-based semiconductor devices and materials (9 papers) and Metal and Thin Film Mechanics (9 papers). F. Engelmark is often cited by papers focused on Acoustic Wave Resonator Technologies (10 papers), GaN-based semiconductor devices and materials (9 papers) and Metal and Thin Film Mechanics (9 papers). F. Engelmark collaborates with scholars based in Sweden and Brazil. F. Engelmark's co-authors include Ilia Katardjiev, G.F. Iriarte, Jörgen Westlinder, S. Berg, Mikael Ottosson, Anders Hårsta, Johan Bjurström, U. Smith, Jörgen Olsson and Paul Muralt and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

F. Engelmark

14 papers receiving 417 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Engelmark Sweden 10 332 261 234 156 112 14 436
Ch. Foerster Germany 11 295 0.9× 207 0.8× 152 0.6× 210 1.3× 134 1.2× 13 476
Chien-Chuan Cheng Taiwan 15 435 1.3× 135 0.5× 139 0.6× 248 1.6× 143 1.3× 48 540
Valeriy Felmetsger United States 12 410 1.2× 240 0.9× 182 0.8× 163 1.0× 141 1.3× 32 470
S. M. Tanner United States 7 210 0.6× 123 0.5× 173 0.7× 109 0.7× 156 1.4× 9 358
J. A. Christman United States 7 303 0.9× 152 0.6× 100 0.4× 147 0.9× 292 2.6× 12 477
Robert T. Bondokov United States 9 153 0.5× 229 0.9× 83 0.4× 146 0.9× 122 1.1× 20 384
Joseph Casamento United States 15 325 1.0× 283 1.1× 184 0.8× 233 1.5× 322 2.9× 32 597
Rytis Dargis United States 14 220 0.7× 148 0.6× 71 0.3× 357 2.3× 355 3.2× 42 570
Jyrki Molarius Finland 5 275 0.8× 169 0.6× 156 0.7× 201 1.3× 120 1.1× 9 476
Wen-Tai Lin Taiwan 9 122 0.4× 103 0.4× 71 0.3× 199 1.3× 213 1.9× 37 353

Countries citing papers authored by F. Engelmark

Since Specialization
Citations

This map shows the geographic impact of F. Engelmark's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Engelmark with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Engelmark more than expected).

Fields of papers citing papers by F. Engelmark

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Engelmark. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Engelmark. The network helps show where F. Engelmark may publish in the future.

Co-authorship network of co-authors of F. Engelmark

This figure shows the co-authorship network connecting the top 25 collaborators of F. Engelmark. A scholar is included among the top collaborators of F. Engelmark based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Engelmark. F. Engelmark is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Iriarte, G.F., Johan Bjurström, Jörgen Westlinder, F. Engelmark, & Ilia Katardjiev. (2005). Synthesis of c-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 52(7). 1170–1174. 56 indexed citations
2.
Iriarte, G.F., F. Engelmark, Ilia Katardjiev, V.P. Plessky, & Ventsislav Yantchev. (2003). SAW COM-parameter extraction in AlN/diamond layered structures. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 50(11). 1542–1547. 37 indexed citations
3.
Iriarte, G.F., F. Engelmark, Mikael Ottosson, & Ilia Katardjiev. (2003). Influence of deposition parameters on the stress of magnetron sputter-deposited AlN thin films on Si(100) substrates. Journal of materials research/Pratt's guide to venture capital sources. 18(2). 423–432. 18 indexed citations
4.
Engelmark, F., Jörgen Westlinder, G.F. Iriarte, Ilia Katardjiev, & Jörgen Olsson. (2003). Electrical characterization of aln mis and mim structures. IEEE Transactions on Electron Devices. 50(5). 1214–1219. 48 indexed citations
5.
Iriarte, G.F., Johan Bjurström, Jörgen Westlinder, F. Engelmark, & Ilia Katardjiev. (2003). Synthesis of c-axis oriented AlN thin films on metal layers: Al, Mo, Ti, TiN and Ni. 311–315. 9 indexed citations
6.
Engelmark, F., Jörgen Westlinder, Tomas Nyberg, & S. Berg. (2003). Experimental and computer simulation studies of the “baffled target” reactive sputtering process. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(6). 1981–1987. 5 indexed citations
7.
Engelmark, F.. (2002). AlN and High-k Thin Films for IC and Electroacoustic Applications. KTH Publication Database DiVA (KTH Royal Institute of Technology). 3 indexed citations
8.
Engelmark, F., G.F. Iriarte, & Ilia Katardjiev. (2002). Selective etching of Al/AlN structures for metallization of surface acoustic wave devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 843–848. 19 indexed citations
9.
Iriarte, G.F., F. Engelmark, & Ilia Katardjiev. (2002). Reactive Sputter Deposition of Highly Oriented AlN Films at Room Temperature. Journal of materials research/Pratt's guide to venture capital sources. 17(6). 1469–1475. 84 indexed citations
10.
Westlinder, Jörgen, Yanwen Zhang, F. Engelmark, et al.. (2002). Simulation and dielectric characterization of reactive dc magnetron cosputtered (Ta2O5)1−x(TiO2)x thin films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 855–861. 6 indexed citations
11.
Frenning, Göran, F. Engelmark, Gunnar A. Niklasson, & Maria Strømme. (2001). Li Conduction in Sputtered Amorphous Ta[sub 2]O[sub 5]. Journal of The Electrochemical Society. 148(5). A418–A418. 13 indexed citations
12.
Engelmark, F., G.F. Iriarte, Ilia Katardjiev, et al.. (2001). Structural and electroacoustic studies of AlN thin films during low temperature radio frequency sputter deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(5). 2664–2669. 57 indexed citations
13.
Engelmark, F., et al.. (2000). Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1609–1612. 76 indexed citations
14.
Jonsson, Lars, Jörgen Westlinder, F. Engelmark, et al.. (2000). Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(4). 1906–1910. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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