U. Gösele

3.8k total citations · 2 hit papers
52 papers, 3.0k citations indexed

About

U. Gösele is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, U. Gösele has authored 52 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in U. Gösele's work include Silicon and Solar Cell Technologies (22 papers), 3D IC and TSV technologies (17 papers) and Electronic Packaging and Soldering Technologies (13 papers). U. Gösele is often cited by papers focused on Silicon and Solar Cell Technologies (22 papers), 3D IC and TSV technologies (17 papers) and Electronic Packaging and Soldering Technologies (13 papers). U. Gösele collaborates with scholars based in Germany, United States and Russia. U. Gösele's co-authors include Qiaoling Tong, U. Eßmann, H. Mughrabi, A. Seeger, W. Frank, Margit Zacharias, Silke Christiansen, J. Heitmann, Rajendra Singh and Bernd O. Kolbesen and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

U. Gösele

51 papers receiving 2.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

SEMICONDUCTOR WAFER BONDING

1998 447 citations U. Gösele, Qiaoling Tong profile →
A model of extrusions and intrusions in fatigued metals I. Point-defect production and the growth of extrusions

1981 436 citations U. Eßmann, U. Gösele et al. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties profile →

Peers

Countries citing papers authored by U. Gösele

Since Specialization

Citations

This map shows the geographic impact of U. Gösele's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Gösele with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Gösele more than expected).

Fields of papers citing papers by U. Gösele

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Gösele. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Gösele. The network helps show where U. Gösele may publish in the future.

Co-authorship network of co-authors of U. Gösele

This figure shows the co-authorship network connecting the top 25 collaborators of U. Gösele. A scholar is included among the top collaborators of U. Gösele based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Gösele. U. Gösele is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Highly p-doped regions in silicon solar cells quantitatively analyzed by small angle beveling and micro-Raman spectroscopy 2009 ·Journal of Applied Physics ·Matthias Becker, U. Gösele, Andreas Hofmann, Silke Christiansen	40
2	Investigation of blistering kinetics in hydrogen implanted aluminium nitride 2008 ·Semiconductor Science and Technology ·Rajendra Singh, Roland W. Scholz, Silke Christiansen, U. Gösele	7
3	Wafer bonding : applications and technology 2004 ·CERN Document Server (European Organization for Nuclear Research) ·Marin Alexe, U. Gösele	44
4	Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers 2004 ·Applied Physics Letters ·Qiaoling Tong, Quan Gan, G. G. Fountain, P.M. Enquist, Roland W. Scholz, U. Gösele	18
5	Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding 2003 ·Materials Chemistry and Physics ·A. Reznicek, Roland W. Scholz, Stephan Senz, U. Gösele	19
6	Epitaxy of carbon-rich silicon with MBE 2002 ·Materials Science and Engineering B ·(unknown), G. Gerth, P. Werner, U. Gösele	6
7	Si and SiC layer transfer by high temperature hydrogenimplantation and lower temperature layer splitting 1998 ·Electronics Letters ·Qiaoling Tong, (unknown), Lida Huang, Fang‐Lin Chao, U. Gösele	20
8	Oxide precipitation at silicon grain boundaries 1997 ·Applied Physics Letters ·(unknown), S. Hopfe, P. Werner, U. Gösele, Gerd Duscher, (unknown), T. Y. Tan	7
9	Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers 1997 ·Applied Physics A ·(unknown), (unknown), D. Hesse, U. Gösele, Michael Lorenz	2
10	Molecular dynamics simulations of silicon wafer bonding 1996 ·Applied Physics A ·(unknown), K. Scheerschmidt, U. Gösele	30
11	Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids 1996 ·Superlattices and Microstructures ·Marius Grundmann, R. Heitz, N. N. Ledentsov, O. Stier, D. Bimberg, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alfërov, S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich	35
12	Growth of buried SiO2 layers in Si by thermal oxidation: Thermodynamic model 1995 ·Applied Physics Letters ·U. Gösele, (unknown), (unknown)	15
13	Properties of SIMOX and bonded SOI material 1995 ·Microelectronic Engineering ·U. Gösele, Manfred Reiche, Qiaoling Tong	12
14	Low temperature wafer direct bonding 1994 ·Journal of Microelectromechanical Systems ·(unknown), (unknown), R. Gafiteanu, U. Gösele	156
15	Steady-state diffusion of point defects to sinks during continuous irradiation 1984 ·Radiation Effects ·A. Seeger, U. Gösele	2
16	Photoluminescence associated with thermally induced microdefects in Czochralski-grown silicon crystals 1983 ·Applied Physics Letters ·Michio Tajima, U. Gösele, J. Weber, R. Sauer	26
17	A model of extrusions and intrusions in fatigued metals I. Point-defect production and the growth of extrusions breakdown → 1981 ·Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·U. Eßmann, U. Gösele, H. Mughrabi	436
18	Simple relationship between the kinetics of correlated and uncorrelated diffusion-controlled reactions 1980 ·Chemical Physics Letters ·U. Gösele	12
19	The formation of swirl defects in silicon by agglomeration of self-interstitials 1977 ·Journal of Crystal Growth ·H. Föll, U. Gösele, Bernd O. Kolbesen	100
20	Eine neue, ausbaufähige Theorie der Statistik der weitreichenden Dipol-Dipol-Energieübertragung nach Förster 1976 ·Zeitschrift für Physikalische Chemie ·U. Gösele, Marta Hauser, U. Klein	27

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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