H. Hier

883 total citations
56 papers, 703 citations indexed

About

H. Hier is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, H. Hier has authored 56 papers receiving a total of 703 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Atomic and Molecular Physics, and Optics, 47 papers in Electrical and Electronic Engineering and 5 papers in Condensed Matter Physics. Recurrent topics in H. Hier's work include Semiconductor Quantum Structures and Devices (42 papers), Semiconductor materials and devices (16 papers) and Advanced Semiconductor Detectors and Materials (15 papers). H. Hier is often cited by papers focused on Semiconductor Quantum Structures and Devices (42 papers), Semiconductor materials and devices (16 papers) and Advanced Semiconductor Detectors and Materials (15 papers). H. Hier collaborates with scholars based in United States, Taiwan and Canada. H. Hier's co-authors include Gregory Belenky, Stefan P. Svensson, D. Donetsky, Robert Potter, Dinghui Wang, Amir A. Lakhani, A. Fathimulla, Wendy L. Sarney, F. J. Crowne and L. Shterengas and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Hier

53 papers receiving 687 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Hier United States 15 632 604 104 53 50 56 703
M. Zaknoune France 16 774 1.2× 392 0.6× 38 0.4× 89 1.7× 64 1.3× 69 838
C. Asplund Sweden 15 478 0.8× 381 0.6× 86 0.8× 47 0.9× 50 1.0× 55 538
V. Daumer Germany 9 200 0.3× 315 0.5× 87 0.8× 53 1.0× 13 0.3× 32 380
N. Vodjdani France 17 655 1.0× 491 0.8× 44 0.4× 40 0.8× 42 0.8× 52 781
G. Hildebrandt United States 9 297 0.5× 242 0.4× 29 0.3× 95 1.8× 41 0.8× 18 365
E. R. Youngdale United States 9 386 0.6× 353 0.6× 83 0.8× 15 0.3× 17 0.3× 20 436
D. Schmidt Germany 18 1.2k 1.8× 178 0.3× 41 0.4× 16 0.3× 54 1.1× 70 1.2k
K. Inderbitzin Switzerland 7 229 0.4× 281 0.5× 111 1.1× 68 1.3× 44 0.9× 7 405
Michael L. Tilton United States 13 518 0.8× 442 0.7× 69 0.7× 16 0.3× 36 0.7× 56 572
H. L. Dunlap United States 15 514 0.8× 299 0.5× 107 1.0× 14 0.3× 36 0.7× 35 596

Countries citing papers authored by H. Hier

Since Specialization
Citations

This map shows the geographic impact of H. Hier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Hier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Hier more than expected).

Fields of papers citing papers by H. Hier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Hier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Hier. The network helps show where H. Hier may publish in the future.

Co-authorship network of co-authors of H. Hier

This figure shows the co-authorship network connecting the top 25 collaborators of H. Hier. A scholar is included among the top collaborators of H. Hier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Hier. H. Hier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Folkes, P. A., et al.. (2015). Raman Scattering from Tin. 1 indexed citations
2.
Lin, Youxi, Dinghui Wang, D. Donetsky, et al.. (2014). Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices. Journal of Electronic Materials. 43(9). 3184–3190. 8 indexed citations
3.
Lin, Youxi, Ding Wang, D. Donetsky, et al.. (2013). Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices. Journal of Electronic Materials. 42(5). 918–926. 25 indexed citations
4.
Wang, Ding, Youxi Lin, D. Donetsky, et al.. (2012). Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8353. 835312–835312. 12 indexed citations
5.
Svensson, Stefan P., Wendy L. Sarney, H. Hier, et al.. (2012). Band gap of InAs1−xSbxwith native lattice constant. Physical Review B. 86(24). 70 indexed citations
6.
Svensson, Stefan P., D. Donetsky, Dinghui Wang, et al.. (2011). Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization. Journal of Crystal Growth. 334(1). 103–107. 114 indexed citations
7.
Svensson, Stefan P., et al.. (2011). Molecular beam epitaxy control and photoluminescence properties of InAsBi. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(2). 42 indexed citations
8.
Belenky, Gregory, G. Kipshidze, D. Donetsky, et al.. (2011). Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs 1-X Sb X alloys. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 27 indexed citations
9.
Aina, L., et al.. (2009). High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications. Infrared Physics & Technology. 52(6). 310–316. 2 indexed citations
10.
Fathimulla, A., H. Hier, L. Aina, T. L. Worchesky, & Parvez N. Uppal. (2004). InP-based multiwavelength QWIP technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5406. 589–589. 3 indexed citations
11.
Aina, L., et al.. (2004). Monolithic photoreceiver technology for free space optical networks. 4. 4_1669–4_1675. 1 indexed citations
12.
Amor, S. Ben, et al.. (1990). Transverse magnetic field studies inAl1−yInyAs/Ga1−xInxAs quantum-well tunneling structures. Physical review. B, Condensed matter. 41(11). 7860–7863. 14 indexed citations
13.
Adesida, I., A. Ketterson, T. Brock, et al.. (1989). Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS. Microelectronic Engineering. 9(1-4). 345–348. 1 indexed citations
14.
Ketterson, A., J. Laskar, T. Brock, et al.. (1989). Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs. Electronics Letters. 25(7). 440–442. 4 indexed citations
15.
Amor, S. Ben, K. P. Martin, R. J. Higgins, et al.. (1989). Magnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure. Applied Physics Letters. 54(19). 1908–1910. 14 indexed citations
16.
O’Connor, Mike, et al.. (1988). Rapid Controlled Thinning of Gallium Arsenide. Journal of The Electrochemical Society. 135(1). 190–193. 3 indexed citations
17.
Fathimulla, A., et al.. (1988). High-performance InAlAs/InGaAs HEMTs and MESFETs. IEEE Electron Device Letters. 9(7). 328–330. 30 indexed citations
18.
Lakhani, Amir A., Robert Potter, & H. Hier. (1988). Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device. Electronics Letters. 24(11). 681–683. 30 indexed citations
19.
Fathimulla, A., H. Hier, & J.R. ABRAHAMS. (1988). High-current, planar-doped pseudomorphic hemts Ga 0.4 In 0.6 As/Al 0.48 In 0.52 As HEMTs. Electronics Letters. 24(11). 717–718. 1 indexed citations
20.
Fathimulla, A., H. Hier, & J.R. ABRAHAMS. (1988). Microwave performance of pulse-doped-heterostructure GaInAs MESFETs. Electronics Letters. 24(2). 93–94. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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