Tien Dat Ngo

542 total citations
26 papers, 380 citations indexed

About

Tien Dat Ngo is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Tien Dat Ngo has authored 26 papers receiving a total of 380 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Materials Chemistry, 13 papers in Electrical and Electronic Engineering and 6 papers in Biomedical Engineering. Recurrent topics in Tien Dat Ngo's work include 2D Materials and Applications (23 papers), Graphene research and applications (13 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). Tien Dat Ngo is often cited by papers focused on 2D Materials and Applications (23 papers), Graphene research and applications (13 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). Tien Dat Ngo collaborates with scholars based in South Korea, Japan and United States. Tien Dat Ngo's co-authors include Won Jong Yoo, Min Sup Choi, Myeong‐jin Lee, Fida Ali, Nasir Ali, Takashi Taniguchi, Inyong Moon, Kenji Watanabe, James Hone and Sungwon Lee and has published in prestigious journals such as Advanced Materials, Nano Letters and ACS Nano.

In The Last Decade

Tien Dat Ngo

25 papers receiving 372 citations

Peers

Tien Dat Ngo

EEE

AMPO

EOMM

Arnab Pal United States

Goutham Arutchelvan Belgium

Annika Grundmann Germany

Chang Niu United States

Alvin Tang United States

Ben R. Conran Germany

Ukjin Jung South Korea

Hyong Seo Yoon South Korea

S. Matt Gilbert United States

Chin‐Sheng Pang United States

Arnab Pal United States

Tien Dat Ngo

247 ×0.8

248 ×1.2

EEE

69 ×0.8

35 ×1.3

AMPO

17 ×0.7

EOMM

Citations per year, relative to Tien Dat Ngo Tien Dat Ngo (= 1×) peers Arnab Pal

Countries citing papers authored by Tien Dat Ngo

Since Specialization

Citations

This map shows the geographic impact of Tien Dat Ngo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tien Dat Ngo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tien Dat Ngo more than expected).

Fields of papers citing papers by Tien Dat Ngo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tien Dat Ngo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tien Dat Ngo. The network helps show where Tien Dat Ngo may publish in the future.

Co-authorship network of co-authors of Tien Dat Ngo

This figure shows the co-authorship network connecting the top 25 collaborators of Tien Dat Ngo. A scholar is included among the top collaborators of Tien Dat Ngo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tien Dat Ngo. Tien Dat Ngo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ngo, Tien Dat, Je‐Jun Lee, Myeong‐jin Lee, et al.. (2024). Opposite synaptic plasticity in oxidation-layer-controlled 2D materials-based memristors for mimicking heterosynaptic plasticity. Nano Today. 59. 102534–102534. 7 indexed citations

Hassan, Yasir, Budhi Singh, Minwoong Joe, et al.. (2024). Twist‐Controlled Ferroelectricity and Emergent Multiferroicity in WSe₂ Bilayers. Advanced Materials. 36(46). e2406290–e2406290. 5 indexed citations

Kim, Brian S. Y., Tien Dat Ngo, Yasir Hassan, et al.. (2024). Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides. Advanced Science. 11(43). e2407175–e2407175. 8 indexed citations

Xi, Fengben, Himanshu Sharma, Xiangyu Wu, et al.. (2024). Integration of GAA Monolayer MoS₂ Nanosheet FETs with Gate First Process for Future 2D CFET Scaling. Lirias (KU Leuven). 121–124. 1 indexed citations

Lee, Sungwon, Nasir Ali, Tien Dat Ngo, et al.. (2024). Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS₂ Field Effect Transistors. ACS Applied Electronic Materials. 6(6). 4149–4158. 9 indexed citations

Ali, Fida, Nasir Ali, Yasir Hassan, et al.. (2024). Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe₂ Field‐Effect Transistors. Advanced Electronic Materials. 10(9). 2 indexed citations

Ngo, Tien Dat, et al.. (2023). Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe₂ FETs. Advanced Electronic Materials. 9(3). 16 indexed citations

Ngo, Tien Dat, et al.. (2023). Modulation of Contact Resistance of Dual‐Gated MoS₂ FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts. Advanced Science. 10(21). e2301400–e2301400. 16 indexed citations

Ali, Nasir, et al.. (2023). Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors. ACS Applied Materials & Interfaces. 15(10). 13299–13306. 4 indexed citations

10.

Ngo, Tien Dat, Tuyen N. Huynh, Inyong Moon, et al.. (2023). Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping. Nano Letters. 23(23). 11345–11352. 12 indexed citations

11.

Wang, Zhenping, et al.. (2023). Achieving Ultrahigh Electron Mobility in PdSe₂ Field‐Effect Transistors via Semimetal Antimony as Contacts. Advanced Functional Materials. 33(28). 26 indexed citations

12.

Ngo, Tien Dat, Chi‐Te Liang, Nobuyuki Aoki, et al.. (2023). Doping-Free High-Performance Photovoltaic Effect in a WSe₂ Lateral p-n Homojunction Formed by Contact Engineering. ACS Applied Materials & Interfaces. 15(29). 35342–35349. 10 indexed citations

13.

Ali, Nasir, Myeong‐jin Lee, Fida Ali, et al.. (2022). Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field Effect Transistors. ACS Applied Nano Materials. 5(12). 18376–18384. 2 indexed citations

14.

Choi, Min Sup, et al.. (2022). Recent Progress in 1D Contacts for 2D‐Material‐Based Devices. Advanced Materials. 34(39). e2202408–e2202408. 35 indexed citations

15.

Ngo, Tien Dat, Won Jong Yoo, Kenji Watanabe, et al.. (2022). Self‐Forming p–n Junction Diode Realized with WSe₂ Surface and Edge Dual Contacts. Small. 18(46). e2204547–e2204547. 22 indexed citations

16.

Choi, Min Sup, Myeong‐jin Lee, Tien Dat Ngo, James Hone, & Won Jong Yoo. (2021). Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials. Advanced Electronic Materials. 7(10). 26 indexed citations

17.

Ngo, Tien Dat, Min Sup Choi, Myeong‐jin Lee, Fida Ali, & Won Jong Yoo. (2021). Anomalously persistent p-type behavior of WSe₂ field-effect transistors by oxidized edge-induced Fermi-level pinning. Journal of Materials Chemistry C. 10(3). 846–853. 16 indexed citations

18.

Ali, Fida, Faisal Ahmed, Sekhar Babu Mitta, et al.. (2021). Traps at the hBN/WSe₂ interface and their impact on polarity transition in WSe₂. 2D Materials. 8(3). 35027–35027. 23 indexed citations

19.

Ngo, Tien Dat, Myeong‐jin Lee, Zheng Yang, et al.. (2020). Control of the Schottky Barrier and Contact Resistance at Metal–WSe₂ Interfaces by Polymeric Doping. Advanced Electronic Materials. 6(10). 36 indexed citations

20.

Bui, The Duy, Duy Nguyen, & Tien Dat Ngo. (2009). Supervising an Unsupervised Neural Network. 129. 307–312. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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