Nam-Yeal Lee

441 total citations
23 papers, 376 citations indexed

About

Nam-Yeal Lee is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Polymers and Plastics. According to data from OpenAlex, Nam-Yeal Lee has authored 23 papers receiving a total of 376 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Materials Chemistry, 19 papers in Electrical and Electronic Engineering and 9 papers in Polymers and Plastics. Recurrent topics in Nam-Yeal Lee's work include Phase-change materials and chalcogenides (16 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Transition Metal Oxide Nanomaterials (9 papers). Nam-Yeal Lee is often cited by papers focused on Phase-change materials and chalcogenides (16 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Transition Metal Oxide Nanomaterials (9 papers). Nam-Yeal Lee collaborates with scholars based in South Korea and Germany. Nam-Yeal Lee's co-authors include Sung‐Min Yoon, Byoung‐Gon Yu, Kyu-Jeong Choi, Seung-Yun Lee, Sang-Ouk Ryu, Young‐Sam Park, Matthias Wuttig, Se-Young Choi, Soon‐Gil Yoon and Sang-Hoon Kim and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

Nam-Yeal Lee

21 papers receiving 359 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Nam-Yeal Lee South Korea	10	349	326	96	89	66	23	376
Chain‐Ming Lee Taiwan	10	339 1.0×	299 0.9×	77 0.8×	108 1.2×	76 1.2×	18	357
Palwinder Singh India	14	356 1.0×	324 1.0×	51 0.5×	56 0.6×	94 1.4×	26	412
Jennifer Luckas France	10	503 1.4×	423 1.3×	80 0.8×	135 1.5×	79 1.2×	14	531
J. C. N. Rijpers Netherlands	6	342 1.0×	277 0.8×	103 1.1×	63 0.7×	94 1.4×	13	365
W. van Es-Spiekman Netherlands	5	305 0.9×	237 0.7×	93 1.0×	30 0.3×	112 1.7×	8	335
Chuanxin Huang China	15	360 1.0×	430 1.3×	33 0.3×	91 1.0×	65 1.0×	42	463
Isom Hilmi Germany	11	374 1.1×	342 1.0×	31 0.3×	88 1.0×	58 0.9×	12	398
Hyeon-Kyun Noh South Korea	8	302 0.9×	419 1.3×	40 0.4×	116 1.3×	31 0.5×	12	453
Wenxiu Cheng China	10	330 0.9×	204 0.6×	175 1.8×	23 0.3×	119 1.8×	22	356

Countries citing papers authored by Nam-Yeal Lee

Since Specialization

Citations

This map shows the geographic impact of Nam-Yeal Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nam-Yeal Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nam-Yeal Lee more than expected).

Fields of papers citing papers by Nam-Yeal Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nam-Yeal Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nam-Yeal Lee. The network helps show where Nam-Yeal Lee may publish in the future.

Co-authorship network of co-authors of Nam-Yeal Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Nam-Yeal Lee. A scholar is included among the top collaborators of Nam-Yeal Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nam-Yeal Lee. Nam-Yeal Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yoon, Sung‐Min, Kyu-Jeong Choi, Nam-Yeal Lee, et al.. (2008). Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti–Si–N Heating Layers. Journal of The Electrochemical Society. 155(6). H421–H421. 6 indexed citations

Choi, Kyu-Jeong, Sung‐Min Yoon, Nam-Yeal Lee, et al.. (2008). The effect of antimony-doping on Ge2Sb2Te5, a phase change material. Thin Solid Films. 516(23). 8810–8812. 37 indexed citations

Lee, Seung-Yun, Seung-Yun Lee, Sung‐Min Yoon, et al.. (2007). Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories. Applied Surface Science. 254(1). 312–315. 1 indexed citations

Yoon, Sung‐Min, Kyu-Jeong Choi, Nam-Yeal Lee, et al.. (2007). Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge₂Sb₂Te₅. Japanese Journal of Applied Physics. 46(2L). L99–L99. 18 indexed citations

Yoon, Sung‐Min, Kyu-Jeong Choi, Nam-Yeal Lee, et al.. (2007). Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films. Applied Surface Science. 254(1). 316–320. 46 indexed citations

Yoon, Sung‐Min, Kyu-Jeong Choi, Nam-Yeal Lee, et al.. (2007). TIME DEPENDENT RESISTANCE CHANGE OF AMORPHOUS PHASE IN PHASE-CHANGE NONVOLATILE MEMORIES. Integrated ferroelectrics. 93(1). 83–89. 2 indexed citations

Yoon, Soon‐Gil, Kyu-Jeong Choi, Sang-Ouk Ryu, et al.. (2006). Nitrogen Incorporation on the Crystallization Temperature of Silver-Doped Ge[sub 45]Te[sub 55] Solid-Electrolyte Films for PMC Memory Applications. Electrochemical and Solid-State Letters. 9(12). G364–G364. 5 indexed citations

Yoon, Sung‐Min, Nam-Yeal Lee, Sang-Ouk Ryu, et al.. (2006). Sb-Se-based phase-change memory device with lower power and higher speed operations. IEEE Electron Device Letters. 27(6). 445–447. 103 indexed citations

Kim, Cheol‐Jung, Soon‐Gil Yoon, Kyu-Jeong Choi, et al.. (2006). Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(2). 721–724. 33 indexed citations

10.

Yoon, Sung‐Min, Kyu-Jeong Choi, Young‐Sam Park, et al.. (2006). Dry Etching of Ge₂Sb₂Te₅ Thin Films into Nanosized Patterns Using TiN Hard Mask. Japanese Journal of Applied Physics. 45(10L). L1080–L1080. 15 indexed citations

11.

Yoon, Soon‐Gil, Kyu-Jeong Choi, Sang-Ouk Ryu, et al.. (2006). Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(5). 2312–2316. 10 indexed citations

12.

Lee, Seung-Yun, Kyu-Jeong Choi, Sang-Ouk Ryu, et al.. (2006). Polycrystalline silicon-germanium heating layer for phase-change memory applications. Applied Physics Letters. 89(5). 41 indexed citations

13.

Lee, Nam-Yeal, Sang-Ouk Ryu, Kyu-Jeong Choi, et al.. (2005). Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (SbxSe1-x). 1 indexed citations

14.

Yoon, Sung‐Min, Nam-Yeal Lee, Sang-Ouk Ryu, et al.. (2005). Etching Characteristics of Ge₂Sb₂Te₅ Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications. Japanese Journal of Applied Physics. 44(6L). L869–L869. 27 indexed citations

15.

Ryu, Sang-Ouk, Nam-Yeal Lee, Won–Jae Lee, & Soon‐Gil Yoon. (2004). Phase Formations and Electrical Properties of Bi_3.15La_0.85Ti₃O₁₂ and Sm-Doped Bi_3.073La_0.85Sm_0.077Ti₃O₁₂ Thin Films with Annealing Temperature. Japanese Journal of Applied Physics. 43(9S). 6594–6594. 3 indexed citations

16.

Lee, Nam-Yeal, Won–Jae Lee, Sang-Ouk Ryu, et al.. (2003). Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi_3.15La_0.85Ti₃O₁₂ Thin Films. Integrated ferroelectrics. 52(1). 171–178. 1 indexed citations

17.

Lee, Nam-Yeal, Sung‐Min Yoon, Woong‐Chul Shin, et al.. (2003). Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures. Journal of the Korean Physical Society. 43(5). 903–908. 1 indexed citations

18.

Lee, Nam-Yeal, Sung‐Min Yoon, In‐Kyu You, et al.. (2003). Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)₄Ti₃O₁₂/ONO/Si Structures. Japanese Journal of Applied Physics. 42(Part 1, No. 11). 6955–6959. 1 indexed citations

19.

Yoon, Sung‐Min, In‐Kyu You, Nam-Yeal Lee, et al.. (2003). Fabrication of Ferroelectric Gate Memory Device Using BLT/HfO₂/Si Gate Structure. Integrated ferroelectrics. 52(1). 195–203. 1 indexed citations

20.

Yu, Byoung‐Gon, Sang-Ouk Ryu, Sung‐Min Yoon, et al.. (2002). Device characterization and Febrication Issues for Ferroelectric Gate Field Effect Transistor Device. JSTS Journal of Semiconductor Technology and Science. 2(3). 213–225. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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