I. Tortorelli

502 citations

18 papers · 397 · h-index 11

Impact in

Materials Chemistry
- Phase-change materials and chalcogenides
Polymers and Plastics
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 14
- Advanced Memory and Neural Computing 7
- Chalcogenide Semiconductor Thin Films 6
- Ferroelectric and Negative Capacitance Devices 1
Materials Chemistry 14
- Phase-change materials and chalcogenides 14

Co-authors: F. Pellizzer (10 shared papers)Andrea Redaelli (9 shared papers)A. Pirovano (10 shared papers)Daniele Ielmini (8 shared papers)Mattia Boniardi (5 shared papers)R. Annunziata (3 shared papers)Massimo Borghi (3 shared papers)P. Zuliani (3 shared papers)
Journals: IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (2 papers)Solid-State Electronics (2 papers)Thin Solid Films (1 paper)Wireless Communications and Mobile Computing (1 paper)
Partner nations: Italy United States Switzerland

In The Last Decade

I. Tortorelli

17 papers receiving 370 citations

Peers

Countries citing papers authored by I. Tortorelli

Since Specialization

Citations

This map shows the geographic impact of I. Tortorelli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Tortorelli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Tortorelli more than expected).

Fields of papers citing papers by I. Tortorelli

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Tortorelli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Tortorelli. The network helps show where I. Tortorelli may publish in the future.

Co-authors

The 25 scholars most cited alongside I. Tortorelli, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Tortorelli Line = papers co-authored together I. Tortorelli links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$ IEEE Transactions on Electron Devices ·P. Zuliani, E. Varesi, Elisabetta Palumbo, Massimo Borghi, I. Tortorelli, D. Erbetta, G. Dalla Libera, Nicola Pessina, A. Gandolfo, Carlo Prelini, L. Ravazzi, R. Annunziata	2013	102
2	A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 Journal of Applied Physics ·Mattia Boniardi, Andrea Redaelli, A. Pirovano, I. Tortorelli, Daniele Ielmini, F. Pellizzer	2009	70
3	Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond R. Annunziata, P. Zuliani, Massimo Borghi, G. De Sandre, L. Scotti, Carlo Prelini, M. Tosi, I. Tortorelli, F. Pellizzer	2009	50
4	Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories Solid-State Electronics ·Mattia Boniardi, Daniele Ielmini, I. Tortorelli, Andrea Redaelli, Agostino Pirovano, Mario Allegra, M. Magistretti, C. Bresolin, D. Erbetta, Alberto Modelli, E. Varesi, F. Pellizzer, Andrea L. Lacaita, Roberto Bez	2010	23
5	A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs IEEE Electron Device Letters ·Andrea Redaelli, A. Pirovano, I. Tortorelli, Daniele Ielmini, Andrea L. Lacaita	2008	22
6	Impact of the current density increase on reliability in scaled BJT-selected PCM for high-density applications Andrea Redaelli, A. Pirovano, I. Tortorelli, F. Ottogalli, A. Ghetti, L. Laurin, A. Benvenuti	2010	21
7	Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation IEEE Electron Device Letters ·Mattia Boniardi, Andrea Redaelli, I. Tortorelli, F. Pellizzer, Agostino Pirovano	2012	20
8	Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond Solid-State Electronics ·A. Pirovano, F. Pellizzer, I. Tortorelli, A. Riganó, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, Andrea Redaelli, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood, R. Bez	2008	17
9	Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond A. Pirovano, F. Pellizzer, I. Tortorelli, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood, R. Bez	2007	14
10	μTrench phase-change memory cell engineering and optimization Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·A. Pirovano, F. Pellizzer, Andrea Redaelli, I. Tortorelli, E. Varesi, F. Ottogalli, M. Tosi, P. Besana, Raimondo Cecchini, R. Piva, M. Magistretti, M. Scaravaggi, G. Mazzone, P. Petruzza, F. Bedeschi, T. Marangon, Alberto Modelli, Daniele Ielmini, Andrea L. Lacaita, R. Bez	2005	11
11	Program circuit for a phase change memory array with 2 MB/s write throughput for embedded applications G. De Sandre, Luca Bettini, E. Calvetti, G. Giacomi, M. Pasotti, Massimo Borghi, P. Zuliani, R. Annunziata, I. Tortorelli, F. Pellizzer, R. Bez	2008	10
12	Impact of material composition on the write performance of phase-change memory devices Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·Mattia Boniardi, Daniele Ielmini, Andrea L. Lacaita, Andrea Redaelli, A. Pirovano, I. Tortorelli, Mario Allegra, M. Magistretti, C. Bresolin, D. Erbetta, Alberto Modelli, E. Varesi, F. Pellizzer, R. Bez	2010	10
13	Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory Mattia Boniardi, Andrea Redaelli, I. Tortorelli, Simone Lavizzari, Agostino Pirovano, F. Pellizzer, E. Varesi, D. Erbetta, C. Bresolin, Alberto Modelli, Roberto Bez	2012	10
14	Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes Thin Solid Films ·C. Dumas, Damien Deleruyelle, A. Demolliens, Christophe Müller, Sabina Spiga, E. Cianci, M. Fanciulli, I. Tortorelli, R. Bez	2011	7
15	Low-energy, high-accuracy convolutional network inference in 3D crosspoint (3DXP) arrays Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·F. Carletti, Matteo Farronato, Nicola Lepri, I. Tortorelli, A. Pirovano, Paolo Fantini, Daniele Ielmini	2024	5
16	In-memory neural network accelerator based on phase change memory (PCM) with one-selector/one-resistor (1S1R) structure operated in the subthreshold regime Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·Nicola Lepri, Paolo Gibertini, Piergiulio Mannocci, A. Pirovano, I. Tortorelli, Paolo Fantini, Daniele Ielmini	2023	4
17	An adaptive space–time receiver for high‐capacity communications systems based on multichannel multirate DS‐CDMA Wireless Communications and Mobile Computing ·Emanuela Falletti, F. Sellone, I. Tortorelli	2002	1
18	3-D Crosspoint (3DXP) Memory Arrays With Subthreshold Operation for Low-Energy, High-Accuracy Neural Network Accelerators IEEE Transactions on Electron Devices ·F. Carletti, Matteo Farronato, Guangdi Hu, Nicola Lepri, I. Tortorelli, A. Pirovano, Paolo Fantini, Daniele Ielmini	2025	0

About I. Tortorelli

I. Tortorelli is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Polymers and Plastics and Computer Networks and Communications, having authored 18 papers that have together received 397 indexed citations. Recurring topics across this work include Phase-change materials and chalcogenides (14 papers), Advanced Memory and Neural Computing (7 papers), Liquid Crystal Research Advancements (7 papers), Chalcogenide Semiconductor Thin Films (6 papers), Transition Metal Oxide Nanomaterials (5 papers), Nonlinear Optical Materials Research (2 papers), Wireless Communication Networks Research (1 paper) and Ferroelectric and Negative Capacitance Devices (1 paper). The work is most often cited by research in Materials Chemistry (339 citations), Polymers and Plastics (96 citations), Electrical and Electronic Engineering (366 citations), Electronic, Optical and Magnetic Materials (91 citations) and Hardware and Architecture (11 citations). I. Tortorelli has collaborated with scholars based in Italy, United States and Switzerland. Frequent co-authors include F. Pellizzer, Andrea Redaelli, A. Pirovano, Daniele Ielmini, Mattia Boniardi, R. Annunziata, Massimo Borghi, P. Zuliani, E. Varesi and Andrea L. Lacaita. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Solid-State Electronics, Thin Solid Films and Wireless Communications and Mobile Computing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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