T. Ohtoshi

915 total citations
44 papers, 714 citations indexed

About

T. Ohtoshi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, T. Ohtoshi has authored 44 papers receiving a total of 714 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in T. Ohtoshi's work include Semiconductor Lasers and Optical Devices (35 papers), Photonic and Optical Devices (28 papers) and Semiconductor Quantum Structures and Devices (25 papers). T. Ohtoshi is often cited by papers focused on Semiconductor Lasers and Optical Devices (35 papers), Photonic and Optical Devices (28 papers) and Semiconductor Quantum Structures and Devices (25 papers). T. Ohtoshi collaborates with scholars based in Japan and United States. T. Ohtoshi's co-authors include N. Chinone, T. Kuroda, Atsuko Niwa, S. Tsuji, T. Kajimura, M. Yamanishi, K. Uomi, Ken Yamaguchi, Yoshimasa Murayama and Tetsuya Uda and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

T. Ohtoshi

41 papers receiving 679 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Ohtoshi Japan 15 557 540 153 72 71 44 714
M. Mannoh Japan 15 414 0.7× 381 0.7× 148 1.0× 25 0.3× 114 1.6× 42 532
P. Rotella United States 12 426 0.8× 422 0.8× 64 0.4× 64 0.9× 164 2.3× 29 538
M. Nido Japan 13 388 0.7× 520 1.0× 327 2.1× 46 0.6× 115 1.6× 49 681
H. M. Macksey United States 14 466 0.8× 370 0.7× 115 0.8× 43 0.6× 71 1.0× 51 543
T. Jouhti Finland 17 957 1.7× 987 1.8× 221 1.4× 33 0.5× 108 1.5× 53 1.1k
R. Kaspi United States 13 475 0.9× 460 0.9× 47 0.3× 72 1.0× 148 2.1× 31 554
D. W. Nam United States 17 649 1.2× 663 1.2× 52 0.3× 75 1.0× 104 1.5× 52 784
H. Jung Germany 12 473 0.8× 390 0.7× 145 0.9× 30 0.4× 273 3.8× 25 630
J. Pamulapati United States 18 620 1.1× 632 1.2× 94 0.6× 35 0.5× 163 2.3× 90 796
H. Shen United States 12 499 0.9× 552 1.0× 93 0.6× 30 0.4× 110 1.5× 22 624

Countries citing papers authored by T. Ohtoshi

Since Specialization
Citations

This map shows the geographic impact of T. Ohtoshi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ohtoshi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ohtoshi more than expected).

Fields of papers citing papers by T. Ohtoshi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ohtoshi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ohtoshi. The network helps show where T. Ohtoshi may publish in the future.

Co-authorship network of co-authors of T. Ohtoshi

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ohtoshi. A scholar is included among the top collaborators of T. Ohtoshi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ohtoshi. T. Ohtoshi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Adachi, K., Takanori Suzuki, T. Ohtoshi, et al.. (2015). Facet-free surface-emitting 1.3-μm DFB laser. 1–3. 1 indexed citations
2.
Ohtoshi, T., et al.. (2008). 700-730 nm InGaAsP quantum well ridge-waveguide lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6909. 69091C–69091C. 3 indexed citations
3.
Kitatani, T., et al.. (2008). N-Type Doping to an Active-Short Cavity DBR Laser to Expand Its Continuous Tuning Range. IEEE Photonics Technology Letters. 20(16). 1348–1350. 1 indexed citations
4.
Sasaki, Shinya, et al.. (2007). 703-nm InGaAsP Quantum-Well Ridge-Waveguide Lasers. 426–429. 1 indexed citations
5.
Shimizu, J., Masahiro Aoki, Taku Tsuchiya, et al.. (2002). Advantages of optical modulators with InGaAlSa/InGaAlAs MQW structure. Electronics Letters. 38(15). 821–822. 23 indexed citations
6.
Takahashi, Makoto, et al.. (2000). Numerical Analysis of Beam-Expanders Integrated with Laser Diodes. IEICE Transactions on Electronics. 83(6). 845–854. 1 indexed citations
7.
Ohtoshi, T., et al.. (1998). Orientation dependence of optical gain in zincblende-GaN strained-quantum-well lasers. IEEE Journal of Selected Topics in Quantum Electronics. 4(3). 527–530. 9 indexed citations
8.
Niwa, Atsuko, T. Ohtoshi, & T. Kuroda. (1997). Valence subband structures of (1010)-GaN/AlGaN strained quantum wells calculated by the tight-binding method. Applied Physics Letters. 70(16). 2159–2161. 48 indexed citations
9.
Takahashi, Makoto, Masahiro Aoki, Hiroshi Sato, T. Ohtoshi, & Shinji Tsuji. (1996). Laser diode integrated with a low radiation loss thickness-tapered beam expander for highly efficient fiber coupling. Optical Review. 3(6). 2 indexed citations
10.
Ohtoshi, T., et al.. (1995). Orientation dependence of optical properties in long wavelength strained quantum-well lasers. IEEE Journal of Selected Topics in Quantum Electronics. 1(2). 211–217. 37 indexed citations
11.
Ohtoshi, T., et al.. (1994). Dependence of linewidth enhancement factor on crystal orientation in strained quantum well lasers. IEEE Photonics Technology Letters. 6(12). 1424–1426. 6 indexed citations
12.
Ohtoshi, T. & N. Chinone. (1991). Suppression of leakage current in InGaAsP/InP buried heterostructure lasers by InAlAs strained current-blocking layers. Electronics Letters. 27(1). 12–13. 8 indexed citations
13.
Ohtoshi, T., Ken Yamaguchi, & N. Chinone. (1989). Analysis of current leakage in InGaAsP/InP buried heterostructure lasers. IEEE Journal of Quantum Electronics. 25(6). 1369–1375. 26 indexed citations
14.
Ohtoshi, T., et al.. (1987). Analysis of astigmatism in high-power semiconductor lasers. Conference on Lasers and Electro-Optics. 1 indexed citations
15.
Ohtoshi, T., et al.. (1987). A two-dimensional device simulator of semiconductor lasers. Solid-State Electronics. 30(6). 627–638. 62 indexed citations
16.
Ohtoshi, T., Ken Yamaguchi, & N. Chinone. (1987). Analysis of Astigmatism in High-Power Semiconductor Lasers. Japanese Journal of Applied Physics. 26(1A). L68–L68. 2 indexed citations
17.
Hanna, J., Shunri Oda, Hiroki Shibata, et al.. (1986). Reactive Deposition of a-Silicon and Si-Based Alloys. MRS Proceedings. 70. 5 indexed citations
18.
Yamaguchi, Ken, et al.. (1986). Two-dimensional device simulator for laser diodes: HILADIES. Electronics Letters. 22(14). 740–741. 9 indexed citations
19.
Ohtoshi, T., K. Uomi, N. Chinone, T. Kajimura, & Yoshimasa Murayama. (1985). Calculated gain and spontaneous spectra of multi-quantum-well lasers. Journal of Applied Physics. 57(3). 992–994. 4 indexed citations
20.
Ohtoshi, T., et al.. (1984). High-power visible GaAlAs lasers with self-aligned strip buried heterostructure. Journal of Applied Physics. 56(9). 2491–2496. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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