T. Anan

1.6k total citations
59 papers, 1.2k citations indexed

About

T. Anan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, T. Anan has authored 59 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in T. Anan's work include Semiconductor Lasers and Optical Devices (44 papers), Semiconductor Quantum Structures and Devices (43 papers) and Photonic and Optical Devices (34 papers). T. Anan is often cited by papers focused on Semiconductor Lasers and Optical Devices (44 papers), Semiconductor Quantum Structures and Devices (43 papers) and Photonic and Optical Devices (34 papers). T. Anan collaborates with scholars based in Japan and United States. T. Anan's co-authors include Kenichi Nishi, S. Sugou, K. Tokutome, M. Yamada, Masayoshi Tsuji, K. Nishi, H. Hatakeyama, H. Yokoyama, S. D. Brorson and Erich P. Ippen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

T. Anan

55 papers receiving 1.1k citations

Peers

T. Anan
M. J. Hafich United States
J. Allam United Kingdom
M. Gao Canada
J. F. Klem United States
Stephen W. Kennerly United States
A. R. Clawson United States
J.B.D. Soole United States
P. W. Foy United States
Ajit V. Barve United States
J. E. Zucker United States
M. J. Hafich United States
T. Anan
Citations per year, relative to T. Anan T. Anan (= 1×) peers M. J. Hafich

Countries citing papers authored by T. Anan

Since Specialization
Citations

This map shows the geographic impact of T. Anan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Anan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Anan more than expected).

Fields of papers citing papers by T. Anan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Anan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Anan. The network helps show where T. Anan may publish in the future.

Co-authorship network of co-authors of T. Anan

This figure shows the co-authorship network connecting the top 25 collaborators of T. Anan. A scholar is included among the top collaborators of T. Anan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Anan. T. Anan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nakata, Toshiyuki, et al.. (2010). InAlAs avalanche photodiodes for gated Geiger mode single photon counting. 822–823. 5 indexed citations
2.
Fukatsu, K., et al.. (2008). 30 Gb/s Over 100-m MMFs Using 1.1-$\mu$m Range VCSELs and Photodiodes. IEEE Photonics Technology Letters. 20(11). 909–911. 8 indexed citations
3.
Hatakeyama, H., T. Akagawa, K. Fukatsu, et al.. (2008). 25 Gbit/s-100 °C operation and high reliability of 1.1-μm-range VCSELs with InGaAs/GaAsP strain-compensated MQWs. 1–2. 1 indexed citations
4.
Hatakeyama, H., T. Akagawa, K. Fukatsu, et al.. (2008). 25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs. Electronics Letters. 45(1). 45–46. 18 indexed citations
5.
Suzuki, Nobuhiro, et al.. (2006). 25-Gbps operation of 1.1-/spl mu/m-range InGaAs VCSELs for high-speed optical interconnections. 2. 3 pp.–3 pp.. 17 indexed citations
6.
Suzuki, N., H. Hatakeyama, Kenichiro Yashiki, et al.. (2006). High-speed InGaAs VCSELs. 508–509. 7 indexed citations
7.
Anan, T., Kenichi Nishi, M. Yamada, et al.. (2002). GaAsSb-based alloys for long-wavelength lasers. 2. 848–849.
8.
Anan, T., M. Yamada, Kenichi Nishi, et al.. (2002). Continuous-wave operation of 1.27-μm GaAsSb/GaAs VCSELs. 2. II–600. 1 indexed citations
9.
Anan, T., M. Yamada, Kenichi Nishi, et al.. (2001). Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs. Electronics Letters. 37(9). 566–567. 46 indexed citations
10.
Yamada, M., T. Anan, K. Tokutome, et al.. (2000). Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates. IEEE Photonics Technology Letters. 12(7). 774–776. 33 indexed citations
11.
Yamazaki, Hiroyuki, T. Anan, Koji Kudo, S. Sugou, & T. Sasaki. (1999). Planar-buried-heterostructure laser diodes with oxidized AlAs insulating current blocking. IEEE Journal of Selected Topics in Quantum Electronics. 5(3). 688–693. 2 indexed citations
12.
Anan, T., Kenichi Nishi, Akihisa Tomita, K. Tokutome, & S. Sugou. (1998). Conduction-Band Discontinuity of InAsP/InP Heterojunction. Japanese Journal of Applied Physics. 37(7R). 3915–3915. 5 indexed citations
13.
Anan, T., M. Yamada, K. Tokutome, & S. Sugou. (1997). 1.3 µm InAsP/InAlGaAs MQW lasers for high-temperatureoperation. Electronics Letters. 33(12). 1048–1049. 10 indexed citations
14.
Anan, T., et al.. (1994). Optimization of GaAs epitaxy on CaF2/Si(111) substrates. Journal of Crystal Growth. 135(1-2). 78–84. 10 indexed citations
15.
Hamamoto, Kiichi, T. Anan, K. Komatsu, & I. Mito. (1993). Preliminary Reliability Evaluations of GaAs/AlGaAs Electro-Optic Directional Coupler Switches. Japanese Journal of Applied Physics. 32(3B). L390–L390.
16.
Watanabe, Issei, S. Sugou, Hiroaki Ishikawa, et al.. (1993). High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product. IEEE Photonics Technology Letters. 5(6). 675–677. 33 indexed citations
17.
Watanabe, Issei, S. Sugou, Hiroaki Ishikawa, et al.. (1993). Large gain-bandwidth-product, low dark-current InAlAs/lnAlGaAs quaternary-well superlattice avalanche photodiodes. ThG1–ThG1. 5 indexed citations
18.
Anan, T., et al.. (1992). Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy. Applied Physics Letters. 60(25). 3159–3161. 72 indexed citations
19.
Hamamoto, Kiichi, T. Anan, K. Komatsu, M. Sugimoto, & I. Mito. (1992). First 8×8 semiconductor optical matrix switches using GaAs/AlGaAs electro-optic guided-wave directional couplers. Electronics Letters. 28(5). 441–443. 36 indexed citations
20.
Yokoyama, H., K. Nishi, T. Anan, & Hideaki Yamada. (1989). Enhanced Spontaneous Emission from GaAs Quantum Wells with Monolithic Optical Microcavities. MD4–MD4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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