Songyan Chen

2.3k citations

187 papers · 1.9k indexed · h-index 22

Impact in

Electrical and Electronic Engineering top 2%
- Photonic and Optical Devices
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Advancements in Battery Materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 161
- Photonic and Optical Devices 75
- Semiconductor materials and devices 48
- Thin-Film Transistor Technologies 36
- Integrated Circuits and Semiconductor Failure Analysis 19
Atomic and Molecular Physics, and Optics 84
- Semiconductor materials and interfaces 41
- Semiconductor Quantum Structures and Devices 27

Co-authors: Cheng Li Hongkai LaiWei HuangGuangyang Lin Jianyuan Wang Jianfang Xu Shaoying Ke Shihao Huang
Journals: Applied Surface Science (15 papers)Applied Physics Letters (14 papers)Journal of Physics D Applied Physics (14 papers)Applied Physics Express (9 papers)IEEE Transactions on Electron Devices (9 papers)
Partner nations: China United States Taiwan

In The Last Decade

Songyan Chen

179 papers receiving 1.8k citations

Peers

Countries citing papers authored by Songyan Chen

Since Specialization

Citations

This map shows the geographic impact of Songyan Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Songyan Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Songyan Chen more than expected).

Fields of papers citing papers by Songyan Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Songyan Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Songyan Chen. The network helps show where Songyan Chen may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Songyan Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Songyan Chen Line = papers co-authored together Songyan Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Silicon-based all-solid-state batteries operating free from external pressure Nature Communications ·Mhd Syahwali Ramadhan, Xiuli Zhang, Yan Liu, Siti Nuke Nurfatimah, Xiang Han, YuA Nikitina, Linshan Luo, Pengfei Su, Ziqi Zhang, Mirella Gomes da Silva, Zhengliang Gong, Li Cheng, Guangyang Lin, 田思思, Ming‐Sheng Wang, Songyan Chen	2025	24
2	Transformation from MoO3 into MoS2: Experimental study on phase transition and energy band modulation Applied Surface Science ·Jeff S. Flick, Rui Wang, Sidney Sondashi, 康子鍛島, Songsong Wu, S. Park, Hans Christian Bruun Hansen, 瑛金森, Guangyang Lin, Wei Huang, Songyan Chen, Cheng Li	2024	2
3	Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications Journal of Alloys and Compounds ·Hans Christian Bruun Hansen, Mikaelly Keila Pereira da Silva, S. Park, Songsong Wu, Juan C. Mazo R, Jeff S. Flick, Jianyuan Wang, Jianfang Xu, Guangyang Lin, Wei Huang, Songyan Chen, Cheng Li	2024	1
4	Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction Applied Surface Science ·Jacob Van Houten, Dan Wang, S. Park, 匡岩淵, 波田, Cheng Li, Guangyang Lin, Fuming Wang, Wei Huang, Songyan Chen	2024	2
5	Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding IEEE Electron Device Letters ·M Castelló-Pomares, 匡岩淵, S. Park, Gero Ferrari, Su Xinmin, Guangyang Lin, Cheng Li, Wei Huang, Chunlai Xue, Songyan Chen	2024	8
6	Low-Cost High-Performance p-GaSe/i-GeSn/n-GOI Heterojunction Photodiode for Visible to Short-Wave Infrared Multispectral Detection IEEE Electron Device Letters ·Jiaxin Qin, 康子鍛島, Houhe Pan, K. Suzuki, Songyan Chen, Wei Huang, Guangyang Lin, Cheng Li	2024	2
7	Tunable responsivity in high-performance SiC/graphene UV photodetectors through interfacial quantum states by bias regulation Applied Physics Letters ·清人川辺, Pavón Pulido Nieves, Wirginia Anna Kukula-Koch, M. Marcovina, Shiming Huang, Shaoxiong Wu, H. Belshaw, 杜家骥, Rongdun Hong, Xiaping Chen, Jiafa Cai, Songyan Chen, Zhengyun Wu, Deyi Fu, Shaolong He, Weiwei Cai, Feng Zhang	2023	10
8	Conductance modification of molybdenum oxide thin films through oxygen-vacancy engineering for visible-blind ultraviolet photodetection Journal of Physics D Applied Physics ·Jeff S. Flick, Rui Wang, 康子鍛島, 波田, S. Park, Hans Christian Bruun Hansen, Guangyang Lin, Shaoxiong Wu, Wei Huang, Songyan Chen, Cheng Li	2023	1
9	Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer IEEE Transactions on Electron Devices ·Shaoying Ke, Xiaoting Xiao, S. Park, Xiaoqiang Chen, Zhiwei Huang, Dušica Ostojić Andrić, Songyan Chen	2022	10
10	Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process Vacuum ·Ebrima E. Cessay, M Castelló-Pomares, 匡岩淵, S. Park, Xiaoqiang Chen, Cheng Li, Wei Huang, Songyan Chen, Shaoying Ke	2021	3
11	Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate Semiconductor Science and Technology ·Shaoying Ke, Dušica Ostojić Andrić, P. E. LAUX, Kálmán Attila, Cheng Li, Songyan Chen	2020	1
12	Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO ₂ /Si substrate Semiconductor Science and Technology ·Guangyang Lin, J.M. Stassen, Zhiwei Huang, Chunyu Yu, Peng Cui, Jie Zhang, Jianyuan Wang, Jianfang Xu, Songyan Chen, Cheng Li, Yuping Zeng	2020	1
13	Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n +/ p shallow junctions through rapid thermal annealing Journal of Physics D Applied Physics ·J.M. Stassen, Guangyang Lin, Ebrima E. Cessay, Shaoying Ke, Efrey Sastoque Jimenez, Songyan Chen, Cheng Li, Wei Huang, Jun Li, A Chen, Jianfang Xu	2019	2
14	Double-shelled microscale porous Si anodes for stable lithium-ion batteries Journal of Power Sources ·Xiang Han, Ziqi Zhang, Huixin Chen, 任琼, Guorui Zheng, Qiaobao Zhang, Jianyuan Wang, Cheng Li, Songyan Chen, Yong Yang	2019	28
15	Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding Journal of Physics D Applied Physics ·Shaoying Ke, Yujie Ye, Virginie Vigues, Cl. Buerhop, Wei Huang, Cheng Li, Songyan Chen	2018	10
16	Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device Journal of Materials Science ·Shaoying Ke, Yujie Ye, Virginie Vigues, 岸智子, Xiaoying Zhang, Wei Huang, Jianyuan Wang, Jianfang Xu, Cheng Li, Songyan Chen	2018	9
17	Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode IEEE Transactions on Electron Devices ·Shaoying Ke, Cl. Buerhop, Magali Nachtergael, Vishnu Sudnagunta, Wei Huang, Jianfang Xu, Cheng Li, Songyan Chen	2017	4
18	Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate Applied Physics Letters ·Guangyang Lin, Xiaohui Yi, Cheng Li, Ningli Chen, Lu Zhang, Songyan Chen, Wei Huang, Jianyuan Wang, Fabrice Grenard, Jiaming Sun	2016	11
19	Time-resolved analysis of thickness-dependent dewetting and ablation of silver films upon nanosecond laser irradiation Applied Physics Letters ·Dongfeng Qi, Dongwoo Paeng, Junyeob Yeo, Eunpa Kim, Letian Wang, Songyan Chen, Costas P. Grigoropoulos	2016	29
20	Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height Applied Physics Letters ·Vincent Cantin, Peng Wang, Dongfeng Qi, Xin Li, Xiang Han, 光茂千野, Songyan Chen, Cheng Li, Wei Huang	2014	14

About Songyan Chen

Songyan Chen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Instrumentation, Materials Chemistry and Biomedical Engineering, having authored 187 papers that have together received 1.9k indexed citations. Recurring topics across this work include Photonic and Optical Devices (75 papers), Semiconductor materials and devices (48 papers), Semiconductor materials and interfaces (41 papers), Silicon Nanostructures and Photoluminescence (40 papers), Thin-Film Transistor Technologies (36 papers), Nanowire Synthesis and Applications (33 papers), Semiconductor Quantum Structures and Devices (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Atomic and Molecular Physics, and Optics (586 citations), Materials Chemistry (638 citations), Electronic, Optical and Magnetic Materials (230 citations) and Instrumentation (41 citations). Songyan Chen has collaborated with scholars based in China, United States and Taiwan. Frequent co-authors include Cheng Li, Hongkai Lai, Wei Huang, Guangyang Lin, Jianyuan Wang, Jianfang Xu, Shaoying Ke, Shihao Huang, Zhiwen Zhou and Li Cheng. Their work appears in journals such as Applied Surface Science, Applied Physics Letters, Journal of Physics D Applied Physics, Applied Physics Express and IEEE Transactions on Electron Devices.

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