Hongkai Lai
About
In The Last Decade
Hongkai Lai
75 papers receiving 688 citations
Peers
Comparison fields: 5 of 59
- Electrical and Electronic Engineering 567
- Atomic and Molecular Physics, and Optics 324
- Materials Chemistry 323
- Biomedical Engineering 148
- Renewable Energy, Sustainability and the Environment 53
Countries citing papers authored by Hongkai Lai
This map shows the geographic impact of Hongkai Lai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hongkai Lai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hongkai Lai more than expected).
Fields of papers citing papers by Hongkai Lai
This network shows the impact of papers produced by Hongkai Lai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hongkai Lai. The network helps show where Hongkai Lai may publish in the future.
Co-authorship network of co-authors of Hongkai Lai
This figure shows the co-authorship network connecting the top 25 collaborators of Hongkai Lai. A scholar is included among the top collaborators of Hongkai Lai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hongkai Lai. Hongkai Lai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 3 | |
| 2 | 9 | |
| 3 | インプランテーションとエキシマレーザ熱処理により達成されたn-Geに対する低い比接触抵抗と良挙動Ge n + /pダイオード | 5 |
| 4 | 11 | |
| 5 | 18 | |
| 6 | 3 | |
| 7 | 4 | |
| 8 | 7 | |
| 9 | 13 | |
| 10 | 2 | |
| 11 | 3 | |
| 12 | 0 | |
| 13 | 21 | |
| 14 | 4 | |
| 15 | 14 | |
| 16 | 23 | |
| 17 | An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors | 1 |
| 18 | Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD | 1 |
| 19 | Preparation of Two-Dimensional Patterned Silicon Substrate by Holographic Lithography | 1 |
| 20 | Resonant Cavity-enhanced Si Photodetectors with Distributed Bragg Reflector | 1 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.