Shih-Cheng Yang

517 total citations
24 papers, 426 citations indexed

About

Shih-Cheng Yang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, Shih-Cheng Yang has authored 24 papers receiving a total of 426 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 5 papers in Mechanical Engineering. Recurrent topics in Shih-Cheng Yang's work include Radio Frequency Integrated Circuit Design (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Semiconductor materials and devices (10 papers). Shih-Cheng Yang is often cited by papers focused on Radio Frequency Integrated Circuit Design (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Semiconductor materials and devices (10 papers). Shih-Cheng Yang collaborates with scholars based in Taiwan and China. Shih-Cheng Yang's co-authors include Yongqiang Feng, Tzu‐Chen Hung, Shu‐San Hsiau, Hsien‐Chin Chiu, Kuo‐Chen Huang, Jaw‐Ren Lin, Feng-Tso Chien, Shih‐Chi Chen, Yi‐Jen Chan and Chin‐Wei Kuo and has published in prestigious journals such as Energy, Chemical Engineering Science and IEEE Transactions on Electron Devices.

In The Last Decade

Shih-Cheng Yang

22 papers receiving 412 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shih-Cheng Yang Taiwan 10 220 125 99 83 57 24 426
Ahmed S. Rashed Egypt 15 73 0.3× 95 0.8× 19 0.2× 226 2.7× 34 0.6× 45 505
F. Donato Italy 8 79 0.4× 86 0.7× 75 0.8× 11 0.1× 106 1.9× 17 360
C. Ulises Gonzalez-Valle United States 10 152 0.7× 31 0.2× 40 0.4× 15 0.2× 15 0.3× 16 293
Gang Sun China 10 45 0.2× 217 1.7× 101 1.0× 12 0.1× 11 0.2× 37 467
R.A. Crane United States 9 62 0.3× 47 0.4× 208 2.1× 10 0.1× 83 1.5× 29 374
Shenglin Huang China 6 30 0.1× 157 1.3× 56 0.6× 34 0.4× 7 0.1× 11 356
José Carbia Carril Spain 10 528 2.4× 12 0.1× 51 0.5× 245 3.0× 108 1.9× 18 687
Y.K. Kao United States 8 330 1.5× 275 2.2× 79 0.8× 22 0.3× 18 0.3× 23 533
I. Niknia Canada 13 58 0.3× 11 0.1× 36 0.4× 37 0.4× 62 1.1× 19 416

Countries citing papers authored by Shih-Cheng Yang

Since Specialization
Citations

This map shows the geographic impact of Shih-Cheng Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shih-Cheng Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shih-Cheng Yang more than expected).

Fields of papers citing papers by Shih-Cheng Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shih-Cheng Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shih-Cheng Yang. The network helps show where Shih-Cheng Yang may publish in the future.

Co-authorship network of co-authors of Shih-Cheng Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Shih-Cheng Yang. A scholar is included among the top collaborators of Shih-Cheng Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shih-Cheng Yang. Shih-Cheng Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huang, Wei‐Tai, et al.. (2024). Automatic recognition of grinding quality of titanium alloy based on the convolutional neural network. The International Journal of Advanced Manufacturing Technology. 135(7-8). 3941–3959. 1 indexed citations
2.
Huang, Wei‐Tai, Shih-Cheng Yang, Wen‐Hsien Ho, & Jinn‐Tsong Tsai. (2021). Multiple performance characteristic index optimization of dimensional accuracy and geometrical shape angle in turn-mill multitasking machining. Proceedings of the Institution of Mechanical Engineers Part B Journal of Engineering Manufacture. 236(14). 1930–1940. 3 indexed citations
3.
Feng, Yongqiang, Tzu‐Chen Hung, Shuang Wang, et al.. (2017). Experimental investigation of a R245fa-based organic Rankine cycle adapting two operation strategies: Stand alone and grid connect. Energy. 141. 1239–1253. 21 indexed citations
4.
5.
Yang, Shih-Cheng, et al.. (2016). Experimental investigation on a 3 kW organic Rankine cycle for low-grade waste heat under different operation parameters. Applied Thermal Engineering. 113. 756–764. 89 indexed citations
6.
Yang, Shih-Cheng. (2006). Segregation of cohesive powders in a vibrated granular bed. Chemical Engineering Science. 61(18). 6180–6188. 15 indexed citations
7.
Yang, Shih-Cheng, et al.. (2005). Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer. 382–385. 1 indexed citations
8.
Chiu, Hsien‐Chin, et al.. (2004). Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors. Japanese Journal of Applied Physics. 43(1). 111–112. 5 indexed citations
9.
Yang, Shih-Cheng, et al.. (2003). The assessment of output digital spectra in quasi enhancement-mode pHEMTs by a modified large-signal model. 3. 2153–2156. 1 indexed citations
10.
Chiu, Hsien‐Chin, Shih-Cheng Yang, Y.-J. Chan, & J. M. Kuo. (2002). High power density and power added efficiency of Al/sub 0.5/In/sub 0.5/P/InGaAs doped-channel HFETs. 188–191. 1 indexed citations
11.
Yang, Shih-Cheng, et al.. (2002). A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier. 204–207. 3 indexed citations
12.
Chiu, Hsien‐Chin, et al.. (2002). Reduced intermodulation distortion of AlGaAs/InGaAs doped-channel FETs by air-bridge gate process. 143–146. 1 indexed citations
13.
Chiu, Hsien‐Chin, et al.. (2002). Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching. IEEE Electron Device Letters. 23(1). 1–3. 34 indexed citations
14.
15.
Kuo, Chin‐Wei, et al.. (2001). 2 Gbit/s transimpedance amplifier fabricated by0.35 µmCMOS technologies. Electronics Letters. 37(19). 1158–1160. 16 indexed citations
16.
Yang, Shih-Cheng & Shu‐San Hsiau. (2001). The simulation of powders with liquid bridges in a 2D vibrated bed. Chemical Engineering Science. 56(24). 6837–6849. 27 indexed citations
17.
Yang, Shih-Cheng, Hsien‐Chin Chiu, Feng-Tso Chien, Yi‐Jen Chan, & J. M. Kuo. (2001). RIE Gate-Recessed (Al Ga ) In P/InGaAs Double Doped-Channel FETs Using CHF BCl Mixing Plasma. 1 indexed citations
18.
Chiu, Hsien‐Chin, et al.. (2001). AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures. IEEE Transactions on Electron Devices. 48(10). 2210–2215. 14 indexed citations
19.
Yang, Shih-Cheng & Shu‐San Hsiau. (2000). Simulation study of the convection cells in a vibrated granular bed. Chemical Engineering Science. 55(18). 3627–3637. 24 indexed citations
20.
Chiu, Hsien‐Chin, et al.. (2000). Reducing source and drain resistances in InGaP/InGaAsdoped-channel HFETs using δ-doping Schottky layer. Electronics Letters. 36(15). 1320–1322. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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