Sheng‐Han Yi

415 total citations
15 papers, 339 citations indexed

About

Sheng‐Han Yi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Sheng‐Han Yi has authored 15 papers receiving a total of 339 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 3 papers in Biomedical Engineering. Recurrent topics in Sheng‐Han Yi's work include Ferroelectric and Negative Capacitance Devices (12 papers), Semiconductor materials and devices (11 papers) and Ferroelectric and Piezoelectric Materials (7 papers). Sheng‐Han Yi is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (12 papers), Semiconductor materials and devices (11 papers) and Ferroelectric and Piezoelectric Materials (7 papers). Sheng‐Han Yi collaborates with scholars based in Taiwan, United States and Japan. Sheng‐Han Yi's co-authors include Miin‐Jang Chen, Hsin-Chih Lin, Yu‐Tung Yin, Chin-I Wang, Jay Shieh, Chunyuan Wang, Makoto Shiojiri, Roger Proksch, David E. Beck and Jing‐Jong Shyue and has published in prestigious journals such as Acta Materialia, Journal of Materials Chemistry A and Nano Energy.

In The Last Decade

Sheng‐Han Yi

15 papers receiving 339 citations

Peers

Sheng‐Han Yi
Jike Lyu Spain
Seok-Jun Won South Korea
Rongsi Xie United Kingdom
Prakash Parajuli United States
Yali Yu China
Sheng‐Han Yi
Citations per year, relative to Sheng‐Han Yi Sheng‐Han Yi (= 1×) peers Tõnis Arroval

Countries citing papers authored by Sheng‐Han Yi

Since Specialization
Citations

This map shows the geographic impact of Sheng‐Han Yi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sheng‐Han Yi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sheng‐Han Yi more than expected).

Fields of papers citing papers by Sheng‐Han Yi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sheng‐Han Yi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sheng‐Han Yi. The network helps show where Sheng‐Han Yi may publish in the future.

Co-authorship network of co-authors of Sheng‐Han Yi

This figure shows the co-authorship network connecting the top 25 collaborators of Sheng‐Han Yi. A scholar is included among the top collaborators of Sheng‐Han Yi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sheng‐Han Yi. Sheng‐Han Yi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Nizamutdinov, Damir, et al.. (2024). Disease Modifying Monoclonal Antibodies and Symptomatic Pharmacological Treatment for Alzheimer’s Disease. Biomedicines. 12(11). 2636–2636. 7 indexed citations
2.
Yi, Sheng‐Han, et al.. (2023). Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology. Advanced Science. 10(32). e2302770–e2302770. 19 indexed citations
3.
Yi, Sheng‐Han, Chin-I Wang, Chunyuan Wang, et al.. (2022). Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors. Journal of the European Ceramic Society. 42(15). 6997–7003. 7 indexed citations
4.
Yi, Sheng‐Han, et al.. (2022). Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing. Applied Surface Science. 591. 153110–153110. 17 indexed citations
5.
Yi, Sheng‐Han, et al.. (2022). Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering. Nano Energy. 99. 107342–107342. 29 indexed citations
6.
Yi, Sheng‐Han, Hsin-Chih Lin, & Miin‐Jang Chen. (2021). Ultra-high energy storage density and scale-up of antiferroelectric TiO2/ZrO2/TiO2 stacks for supercapacitors. Journal of Materials Chemistry A. 9(14). 9081–9091. 35 indexed citations
7.
Wang, Chin-I, et al.. (2021). Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2. ACS Applied Electronic Materials. 3(4). 1937–1946. 9 indexed citations
8.
Yi, Sheng‐Han, Yu‐Tung Yin, David E. Beck, et al.. (2020). Sub-7-nm textured ZrO2 with giant ferroelectricity. Acta Materialia. 205. 116536–116536. 39 indexed citations
9.
Wang, Chunyuan, Sheng‐Han Yi, Chin-I Wang, et al.. (2020). Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. Materials Science in Semiconductor Processing. 109. 104933–104933. 20 indexed citations
10.
Yi, Sheng‐Han, et al.. (2020). Low-temperature crystallization and paraelectric–ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment. Journal of Materials Chemistry C. 8(11). 3669–3677. 20 indexed citations
11.
Wang, Chunyuan, Chin-I Wang, Sheng‐Han Yi, et al.. (2020). Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering. Materials & Design. 195. 109020–109020. 32 indexed citations
12.
Yin, Yu‐Tung, et al.. (2020). Sub-nanometer heating depth of atomic layer annealing. Applied Surface Science. 525. 146615–146615. 21 indexed citations
13.
Wang, Chin-I, et al.. (2019). High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment. ACS Applied Electronic Materials. 1(7). 1091–1098. 29 indexed citations
14.
Yi, Sheng‐Han, et al.. (2019). Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers. Journal of the European Ceramic Society. 39(14). 4038–4045. 45 indexed citations
15.
Fitzgerald, Eugene A., et al.. (2004). Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 1899–1911. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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