Yu‐Tung Yin

744 total citations
37 papers, 624 citations indexed

About

Yu‐Tung Yin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yu‐Tung Yin has authored 37 papers receiving a total of 624 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yu‐Tung Yin's work include Semiconductor materials and devices (17 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and ZnO doping and properties (11 papers). Yu‐Tung Yin is often cited by papers focused on Semiconductor materials and devices (17 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and ZnO doping and properties (11 papers). Yu‐Tung Yin collaborates with scholars based in Taiwan, Japan and United States. Yu‐Tung Yin's co-authors include Liang‐Yih Chen, Jeffrey Hopwood, Miin‐Jang Chen, Ching‐Hsiang Chen, Sheng‐Han Yi, J. W. Chiou, Chin-I Wang, Makoto Shiojiri, Shu‐Han Wu and Jay Shieh and has published in prestigious journals such as Chemistry of Materials, Acta Materialia and Journal of Materials Chemistry.

In The Last Decade

Yu‐Tung Yin

36 papers receiving 618 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yu‐Tung Yin Taiwan 14 452 365 105 89 87 37 624
Hyunwoong Seo Japan 13 257 0.6× 401 1.1× 105 1.0× 196 2.2× 80 0.9× 71 626
Min Hwan Jeon South Korea 12 524 1.2× 756 2.1× 86 0.8× 63 0.7× 142 1.6× 26 908
Vincent Vandalon Netherlands 17 679 1.5× 685 1.9× 71 0.7× 90 1.0× 69 0.8× 28 869
Takashi Yanase Japan 14 181 0.4× 358 1.0× 85 0.8× 83 0.9× 74 0.9× 68 530
Jun Kue Park South Korea 12 119 0.3× 259 0.7× 155 1.5× 36 0.4× 86 1.0× 52 458
Hanhwi Jang South Korea 16 314 0.7× 426 1.2× 133 1.3× 93 1.0× 147 1.7× 45 699
Saurabh Karwal Netherlands 11 444 1.0× 367 1.0× 47 0.4× 44 0.5× 36 0.4× 16 555
S. H. Dalal United Kingdom 12 394 0.9× 700 1.9× 148 1.4× 61 0.7× 219 2.5× 22 862
Zhihua Duan China 15 255 0.6× 494 1.4× 228 2.2× 67 0.8× 181 2.1× 55 586
Zhang Yang China 12 198 0.4× 205 0.6× 130 1.2× 27 0.3× 89 1.0× 31 407

Countries citing papers authored by Yu‐Tung Yin

Since Specialization
Citations

This map shows the geographic impact of Yu‐Tung Yin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yu‐Tung Yin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yu‐Tung Yin more than expected).

Fields of papers citing papers by Yu‐Tung Yin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yu‐Tung Yin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yu‐Tung Yin. The network helps show where Yu‐Tung Yin may publish in the future.

Co-authorship network of co-authors of Yu‐Tung Yin

This figure shows the co-authorship network connecting the top 25 collaborators of Yu‐Tung Yin. A scholar is included among the top collaborators of Yu‐Tung Yin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yu‐Tung Yin. Yu‐Tung Yin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yin, Yu‐Tung, et al.. (2025). High-Quality HfO2 High-K Gate Dielectrics Deposited on Highly Oriented Pyrolytic Graphite via Enhanced Precursor Atomic Layer Seeding. ACS Applied Electronic Materials. 7(5). 1943–1952. 1 indexed citations
2.
Shiojiri, Makoto, et al.. (2024). Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy. Journal of Materials Chemistry A. 12(41). 28211–28223.
3.
Lin, Wei-Chen, Makoto Shiojiri, Yu‐Tung Yin, et al.. (2024). Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf 0.5 Zr 0.5 O 2 Grown by Atomic Layer Epitaxy. Small. 21(3). e2408278–e2408278. 2 indexed citations
4.
Yin, Yu‐Tung, et al.. (2023). High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing. Materials Chemistry and Physics. 304. 127895–127895. 2 indexed citations
5.
Yin, Yu‐Tung, et al.. (2022). Large area and rapid electron beam annealing for high-quality epitaxial GaN layer. Materials Research Bulletin. 153. 111903–111903. 1 indexed citations
6.
Yi, Sheng‐Han, Chin-I Wang, Chunyuan Wang, et al.. (2022). Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors. Journal of the European Ceramic Society. 42(15). 6997–7003. 7 indexed citations
7.
Yin, Yu‐Tung, et al.. (2022). Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget. Journal of the European Ceramic Society. 42(10). 4221–4226. 7 indexed citations
8.
Chuu, Chih‐Piao, et al.. (2021). Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride. Chemistry of Materials. 33(14). 5584–5590. 11 indexed citations
9.
Wang, Chin-I, et al.. (2020). Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks. ACS Applied Electronic Materials. 2(4). 891–897. 6 indexed citations
10.
Yi, Sheng‐Han, Yu‐Tung Yin, David E. Beck, et al.. (2020). Sub-7-nm textured ZrO2 with giant ferroelectricity. Acta Materialia. 205. 116536–116536. 39 indexed citations
11.
Wang, Chunyuan, Sheng‐Han Yi, Chin-I Wang, et al.. (2020). Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. Materials Science in Semiconductor Processing. 109. 104933–104933. 20 indexed citations
12.
13.
Wang, Chin-I, et al.. (2019). High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment. ACS Applied Electronic Materials. 1(7). 1091–1098. 29 indexed citations
14.
Wang, Chin-I, et al.. (2019). Low-Temperature Conformal Atomic Layer Etching of Si with a Damage-Free Surface for Next-Generation Atomic-Scale Electronics. ACS Applied Nano Materials. 2(7). 4578–4583. 4 indexed citations
15.
Yin, Yu‐Tung, et al.. (2019). Negative capacitance from the inductance of ferroelectric switching. Communications Physics. 2(1). 24 indexed citations
16.
Yin, Yu‐Tung, et al.. (2018). Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature. ACS Sustainable Chemistry & Engineering. 7(1). 487–495. 33 indexed citations
17.
Chen, Liang‐Yih & Yu‐Tung Yin. (2013). Hierarchically assembled ZnO nanoparticles on high diffusion coefficient ZnO nanowire arrays for high efficiency dye-sensitized solar cells. Nanoscale. 5(5). 1777–1777. 37 indexed citations
18.
Chen, Liang‐Yih & Yu‐Tung Yin. (2013). Efficient electron transport in ZnO nanowire/nanoparticle dye-sensitized solar cells via continuous flow injection process. RSC Advances. 3(22). 8480–8480. 18 indexed citations
19.
Yin, Yu‐Tung, et al.. (2011). The Growth Mechanism of Vertically Aligned ZnO Nanowire Arrays on Non‐epitaxial Si(100) Substrates. Journal of the Chinese Chemical Society. 58(6). 817–821. 3 indexed citations
20.
Park, Seung Woo, Yun Wang, John T. W. Yeow, Yu‐Tung Yin, & Liang‐Yih Chen. (2010). Humidity sensing characteristics of laterally aligned ZnO nanowires by dielectrophoresis method. 64. 435–438. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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