Chin-I Wang

420 total citations
21 papers, 333 citations indexed

About

Chin-I Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Chin-I Wang has authored 21 papers receiving a total of 333 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Chin-I Wang's work include Semiconductor materials and devices (16 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Chin-I Wang is often cited by papers focused on Semiconductor materials and devices (16 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Chin-I Wang collaborates with scholars based in Taiwan, China and Japan. Chin-I Wang's co-authors include Chuen‐Shii Chou, Sheau-Horng Lin, Miin‐Jang Chen, Yu‐Tung Yin, Sheng‐Han Yi, Hsin-Chih Lin, Chunyuan Wang, Kuan‐Hung Liu, Chih‐Sheng Chang and Jing‐Jong Shyue and has published in prestigious journals such as Journal of Applied Physics, Acta Materialia and Applied Surface Science.

In The Last Decade

Chin-I Wang

21 papers receiving 322 citations

Peers

Chin-I Wang
Jichang Sun China
Xuanye Wang China
Liang Gao China
Dragoljub Vranković Germany
Pooja Vadhva United Kingdom
Takuya Togashi Japan
Sumit Ranjan Sahu India
Kenta Yamazaki Japan
Masoud Shekargoftar Czechia
Kwang‐Sun Ji South Korea
Jichang Sun China
Chin-I Wang
Citations per year, relative to Chin-I Wang Chin-I Wang (= 1×) peers Jichang Sun

Countries citing papers authored by Chin-I Wang

Since Specialization
Citations

This map shows the geographic impact of Chin-I Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chin-I Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chin-I Wang more than expected).

Fields of papers citing papers by Chin-I Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chin-I Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chin-I Wang. The network helps show where Chin-I Wang may publish in the future.

Co-authorship network of co-authors of Chin-I Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Chin-I Wang. A scholar is included among the top collaborators of Chin-I Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chin-I Wang. Chin-I Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Chin-I, Hsin-Chih Lin, Jer‐Fu Wang, et al.. (2023). Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction. Acta Materialia. 246. 118707–118707. 11 indexed citations
2.
Yi, Sheng‐Han, Chin-I Wang, Chunyuan Wang, et al.. (2022). Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors. Journal of the European Ceramic Society. 42(15). 6997–7003. 7 indexed citations
3.
Yi, Sheng‐Han, et al.. (2022). Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing. Applied Surface Science. 591. 153110–153110. 17 indexed citations
4.
Wang, Chin-I, et al.. (2021). Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm. Journal of Materials Chemistry C. 9(37). 12759–12767. 28 indexed citations
5.
Wang, Chin-I, et al.. (2021). Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography. Journal of Materials Chemistry C. 9(26). 8285–8293. 3 indexed citations
6.
Wang, Chin-I, et al.. (2021). Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2. ACS Applied Electronic Materials. 3(4). 1937–1946. 9 indexed citations
7.
Wang, Chin-I, et al.. (2020). Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks. ACS Applied Electronic Materials. 2(4). 891–897. 6 indexed citations
8.
Wang, Chunyuan, Sheng‐Han Yi, Chin-I Wang, et al.. (2020). Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. Materials Science in Semiconductor Processing. 109. 104933–104933. 20 indexed citations
9.
Wang, Chunyuan, Chin-I Wang, Sheng‐Han Yi, et al.. (2020). Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering. Materials & Design. 195. 109020–109020. 32 indexed citations
10.
Wang, Chin-I, Yu‐Tung Yin, Tsai-Fu Chung, et al.. (2020). Dielectric properties and reliability enhancement of atomic layer deposited thin films by in situ atomic layer substrate biasing. Journal of Materials Chemistry C. 8(37). 13025–13032. 7 indexed citations
11.
Yin, Yu‐Tung, et al.. (2020). Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks. Journal of Materials Chemistry C. 9(4). 1401–1409. 3 indexed citations
12.
Wang, Chin-I, et al.. (2019). High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment. ACS Applied Electronic Materials. 1(7). 1091–1098. 29 indexed citations
13.
14.
Wang, Chin-I, et al.. (2019). Low-Temperature Conformal Atomic Layer Etching of Si with a Damage-Free Surface for Next-Generation Atomic-Scale Electronics. ACS Applied Nano Materials. 2(7). 4578–4583. 4 indexed citations
15.
Wang, Chin-I, Yen‐Chang Chen, Yi‐Ju Chen, et al.. (2018). Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications. Semiconductor Science and Technology. 33(3). 35013–35013. 6 indexed citations
16.
Lin, Yu‐Ting, et al.. (2017). Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer. Journal of Applied Physics. 122(9). 4 indexed citations
17.
Chou, Chuen‐Shii, Sheau-Horng Lin, Chin-I Wang, & Kuan‐Hung Liu. (2009). A hybrid intumescent fire retardant coating from cake- and eggshell-type IFRC. Powder Technology. 198(1). 149–156. 25 indexed citations
18.
Chou, Chuen‐Shii, Sheau-Horng Lin, & Chin-I Wang. (2009). Preparation and characterization of the intumescent fire retardant coating with a new flame retardant. Advanced Powder Technology. 20(2). 169–176. 71 indexed citations
19.
Chou, Chuen‐Shii, et al.. (2008). Preparation of Graphite/Nano-Powder Composite Particles and Applicability as Carbon Anode Material in a Lithium Ion Battery. Advanced Powder Technology. 19(4). 383–396. 15 indexed citations
20.
Hawkins, Robert P., Suzanne Pingree, Lee Ann Kahlor, et al.. (2002). What Holds Attention to Television?. Communication Research. 29(1). 3–30. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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