Seonghearn Lee

601 total citations
50 papers, 403 citations indexed

About

Seonghearn Lee is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Biomedical Engineering. According to data from OpenAlex, Seonghearn Lee has authored 50 papers receiving a total of 403 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 4 papers in Condensed Matter Physics and 2 papers in Biomedical Engineering. Recurrent topics in Seonghearn Lee's work include Radio Frequency Integrated Circuit Design (36 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Silicon Carbide Semiconductor Technologies (20 papers). Seonghearn Lee is often cited by papers focused on Radio Frequency Integrated Circuit Design (36 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Silicon Carbide Semiconductor Technologies (20 papers). Seonghearn Lee collaborates with scholars based in South Korea and United States. Seonghearn Lee's co-authors include Kee Soo Nam, Min‐Sik Park, Sang‐Won Kang, Ju‐Young Kim and Sang‐Jun Lee and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

Seonghearn Lee

42 papers receiving 379 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seonghearn Lee South Korea 11 394 64 27 23 13 50 403
K. Schonenberg United States 10 338 0.9× 46 0.7× 72 2.7× 16 0.7× 10 0.8× 22 349
D. Marchesan Canada 10 475 1.2× 82 1.3× 41 1.5× 7 0.3× 32 2.5× 13 479
Magali De Matos France 9 196 0.5× 37 0.6× 39 1.4× 11 0.5× 17 1.3× 35 209
A.O. Adan United States 9 351 0.9× 28 0.4× 17 0.6× 35 1.5× 31 2.4× 22 358
Guan Huei See Singapore 11 341 0.9× 42 0.7× 32 1.2× 11 0.5× 19 1.5× 44 355
Marie-Anne Jaud France 6 291 0.7× 41 0.6× 29 1.1× 29 1.3× 13 1.0× 16 299
Steffen Lehmann Germany 11 331 0.8× 22 0.3× 48 1.8× 18 0.8× 15 1.2× 55 342
J.S. Duster United States 11 364 0.9× 48 0.8× 33 1.2× 10 0.4× 11 0.8× 26 374
M.-A. Jaud France 11 325 0.8× 72 1.1× 20 0.7× 28 1.2× 21 1.6× 17 337
J. Malinowski United States 9 306 0.8× 42 0.7× 26 1.0× 22 1.0× 15 1.2× 30 318

Countries citing papers authored by Seonghearn Lee

Since Specialization
Citations

This map shows the geographic impact of Seonghearn Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seonghearn Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seonghearn Lee more than expected).

Fields of papers citing papers by Seonghearn Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seonghearn Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seonghearn Lee. The network helps show where Seonghearn Lee may publish in the future.

Co-authorship network of co-authors of Seonghearn Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Seonghearn Lee. A scholar is included among the top collaborators of Seonghearn Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seonghearn Lee. Seonghearn Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Seonghearn, et al.. (2020). Analysis of RF Inductive Effect in S-Parameters of Body Contact PD-SOI MOSFETs. IEEE Transactions on Electron Devices. 67(10). 4054–4059. 4 indexed citations
2.
Lee, Seonghearn, et al.. (2019). Theory and Analysis of Kink Effect in Body Contacted PD-SOI nMOSFETs. Journal of the Institute of Electronics and Information Engineers. 56(11). 15–21. 3 indexed citations
3.
Lee, Seonghearn, et al.. (2018). Improved RF Modeling of Intrinsic Output Equivalent Circuit for HR PD-SOI MOSFETs. 1–2. 2 indexed citations
4.
Lee, Seonghearn, et al.. (2018). Empirical Kink Effect Modeling for Body Contacted High Resistivity PD-SOI nMOSFETs. Journal of the Institute of Electronics and Information Engineers. 55(12). 47–52. 3 indexed citations
5.
Lee, Sang‐Jun & Seonghearn Lee. (2015). Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs. JSTS Journal of Semiconductor Technology and Science. 15(6). 653–657. 1 indexed citations
6.
Lee, Seonghearn, et al.. (2015). Improved high‐frequency output equivalent circuit modelling for MOSFETs. Electronics Letters. 51(24). 2045–2047. 1 indexed citations
7.
Lee, Seonghearn, et al.. (2014). Physical origin of gate voltage‐dependent drain–source capacitance in short‐channel MOSFETs. Electronics Letters. 50(24). 1879–1881. 4 indexed citations
8.
Lee, Seonghearn, et al.. (2007). Scalable BSIM3v3 RF Modeling for CMOS IC Simulation. 대한전자공학회 ISOCC. 529–530. 1 indexed citations
9.
Lee, Seonghearn, et al.. (2005). Novel SPICE macro modeling for an integrated si schottky barrier diode. AMS Acta (University of Bologna). 409–412. 1 indexed citations
10.
Lee, Seonghearn. (2004). Response to comments on “A Direct Extraction Technique for a Small‐Signal MOSFET Equivalent Circuit with Substrate Parameters”. Microwave and Optical Technology Letters. 43(3). 269–269. 1 indexed citations
11.
Lee, Seonghearn. (2004). Empirical nonlinear modeling for RF MOSFETs. International Journal of RF and Microwave Computer-Aided Engineering. 14(2). 182–189. 2 indexed citations
15.
Lee, Seonghearn, et al.. (2001). A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters. IEEE Transactions on Electron Devices. 48(4). 784–788. 5 indexed citations
16.
Lee, Seonghearn, et al.. (2000). High-Frequency Data Extraction of Bias-Dependent Intrinsic Model Parameters for Silicon MOSFETs. 5(2). 122–126. 1 indexed citations
17.
Lee, Seonghearn. (1999). Effects of pad and interconnection parasitics on forward transit time in HBTs. IEEE Transactions on Electron Devices. 46(2). 275–280. 24 indexed citations
18.
Park, Min‐Sik, et al.. (1998). The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology. IEEE Transactions on Electron Devices. 45(9). 1953–1959. 52 indexed citations
19.
20.
Lee, Seonghearn. (1996). Fast and efficient extraction of HBT model parameters using multibias S-parameter sets. IEEE Transactions on Microwave Theory and Techniques. 44(8). 1499–1502. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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