Sang-Ouk Ryu

674 total citations
30 papers, 586 citations indexed

About

Sang-Ouk Ryu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sang-Ouk Ryu has authored 30 papers receiving a total of 586 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 25 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sang-Ouk Ryu's work include Phase-change materials and chalcogenides (11 papers), Chalcogenide Semiconductor Thin Films (8 papers) and Semiconductor materials and devices (8 papers). Sang-Ouk Ryu is often cited by papers focused on Phase-change materials and chalcogenides (11 papers), Chalcogenide Semiconductor Thin Films (8 papers) and Semiconductor materials and devices (8 papers). Sang-Ouk Ryu collaborates with scholars based in South Korea, United States and Germany. Sang-Ouk Ryu's co-authors include Byoung‐Gon Yu, Kyu-Jeong Choi, Nam-Yeal Lee, Sung‐Min Yoon, Seung-Yun Lee, In‐Kyu You, Soon‐Gil Yoon, Won-Jae Lee, Young‐Sam Park and Young-Bae Park and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Sang-Ouk Ryu

26 papers receiving 562 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Sang-Ouk Ryu South Korea	12	491	475	155	105	96	30	586
Nak‐Jin Seong South Korea	16	722 1.5×	700 1.5×	132 0.9×	82 0.8×	98 1.0×	79	901
Byung-Eun Park South Korea	10	497 1.0×	529 1.1×	121 0.8×	42 0.4×	130 1.4×	39	675
Hideo Sonohara Japan	8	577 1.2×	645 1.4×	116 0.7×	135 1.3×	88 0.9×	9	723
Arfan Bukhtiar China	15	452 0.9×	481 1.0×	149 1.0×	94 0.9×	92 1.0×	34	625
Tomoaki Kaneko Japan	13	214 0.4×	312 0.7×	189 1.2×	30 0.3×	31 0.3×	47	507
K. Perumal Germany	11	378 0.8×	483 1.0×	80 0.5×	39 0.4×	109 1.1×	18	524
J. R. Bellingham United Kingdom	6	477 1.0×	489 1.0×	77 0.5×	165 1.6×	56 0.6×	8	582
Shogo Hatayama Japan	13	455 0.9×	502 1.1×	61 0.4×	158 1.5×	62 0.6×	48	580
S.F. Ting Taiwan	10	279 0.6×	134 0.3×	66 0.4×	50 0.5×	40 0.4×	29	349

Countries citing papers authored by Sang-Ouk Ryu

Since Specialization

Citations

This map shows the geographic impact of Sang-Ouk Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sang-Ouk Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sang-Ouk Ryu more than expected).

Fields of papers citing papers by Sang-Ouk Ryu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sang-Ouk Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sang-Ouk Ryu. The network helps show where Sang-Ouk Ryu may publish in the future.

Co-authorship network of co-authors of Sang-Ouk Ryu

This figure shows the co-authorship network connecting the top 25 collaborators of Sang-Ouk Ryu. A scholar is included among the top collaborators of Sang-Ouk Ryu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sang-Ouk Ryu. Sang-Ouk Ryu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lee, Hyunsoo, Dong Yun Jung, Hyung‐Seok Lee, et al.. (2017). Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure. JSTS Journal of Semiconductor Technology and Science. 17(3). 354–362. 1 indexed citations

Lee, Hyunsoo, et al.. (2015). 0.34 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}}$ </tex-math> </inline-formula> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal. IEEE Electron Device Letters. 36(11). 1132–1134. 47 indexed citations

Kim, Seungju & Sang-Ouk Ryu. (2010). Efficiency of flexible organic solar cells as a function of post-annealing temperatures. Current Applied Physics. 10(4). e181–e184. 4 indexed citations

Ryu, Sang-Ouk, et al.. (2009). Staggered and Inverted Staggered Type Organic-Inorganic Hybrid TFTs with ZnO Channel Layer Deposited by Atomic Layer Deposition. Journal of the Microelectronics and Packaging Society. 16(4). 17–22. 1 indexed citations

Kim, Hyun Chul, et al.. (2009). Dependence of $O_2$ Plasma Treatment of Cross-Linked PVP Insulator on the Electrical Properties of Organic-Inorganic Thin Film Transistors with ZnO Channel Layer. Journal of the Microelectronics and Packaging Society. 16(2). 21–25. 1 indexed citations

Kim, Sung Hyun, Jyongsik Jang, Kyoung Soo Yook, et al.. (2008). Triplet host engineering for triplet exciton management in phosphorescent organic light-emitting diodes. Journal of Applied Physics. 103(5). 34 indexed citations

Ryu, Sang-Ouk. (2008). Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications. Journal of Electronic Materials. 37(4). 535–539. 4 indexed citations

Lee, Seung-Yun, Sung‐Min Yoon, Kyu-Jeong Choi, et al.. (2007). Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories. Applied Surface Science. 254(1). 312–315. 1 indexed citations

Kim, Hong Seung, et al.. (2007). Effects of oxygen concentration on the electrical properties of ZnO films. Ceramics International. 34(4). 1097–1101. 22 indexed citations

10.

Yoon, Soon‐Gil, Kyu-Jeong Choi, Sang-Ouk Ryu, et al.. (2006). Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(5). 2312–2316. 10 indexed citations

11.

Yoon, Soon‐Gil, Kyu-Jeong Choi, Sang-Ouk Ryu, et al.. (2006). Nitrogen Incorporation on the Crystallization Temperature of Silver-Doped Ge[sub 45]Te[sub 55] Solid-Electrolyte Films for PMC Memory Applications. Electrochemical and Solid-State Letters. 9(12). G364–G364. 5 indexed citations

12.

Lee, Nam-Yeal, Sang-Ouk Ryu, Kyu-Jeong Choi, et al.. (2005). Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (SbxSe1-x). 1 indexed citations

13.

Yoon, Sung‐Min, Nam-Yeal Lee, Sang-Ouk Ryu, et al.. (2005). Etching Characteristics of Ge₂Sb₂Te₅ Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications. Japanese Journal of Applied Physics. 44(6L). L869–L869. 27 indexed citations

14.

Shin, Woong‐Chul, Sang-Ouk Ryu, In‐Kyu You, et al.. (2004). Plasma-Enhanced Atomic Layer Deposition of SrTa[sub 2]O[sub 6] Thin Films Using Sr[Ta(OC[sub 2]H[sub 5])[sub 5](OC[sub 2]H[sub 4]OCH[sub 3])][sub 2] as Precursor. Journal of The Electrochemical Society. 151(5). C292–C292. 11 indexed citations

15.

Lee, Nam-Yeal, Sung‐Min Yoon, Woong‐Chul Shin, et al.. (2003). Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures. Journal of the Korean Physical Society. 43(5). 903–908. 1 indexed citations

16.

Lee, Nam-Yeal, Won–Jae Lee, Sang-Ouk Ryu, et al.. (2003). Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi_3.15La_0.85Ti₃O₁₂ Thin Films. Integrated ferroelectrics. 52(1). 171–178. 1 indexed citations

17.

Lee, Nam-Yeal, Sung‐Min Yoon, In‐Kyu You, et al.. (2003). Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)₄Ti₃O₁₂/ONO/Si Structures. Japanese Journal of Applied Physics. 42(Part 1, No. 11). 6955–6959. 1 indexed citations

18.

Yu, Byoung‐Gon, Sang-Ouk Ryu, Sung‐Min Yoon, et al.. (2002). Device characterization and Febrication Issues for Ferroelectric Gate Field Effect Transistor Device. JSTS Journal of Semiconductor Technology and Science. 2(3). 213–225. 1 indexed citations

19.

Chae, Byung Gyu, et al.. (2002). New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition. Japanese Journal of Applied Physics. 41(Part 2, No. 6B). L729–L731. 27 indexed citations

20.

Lee, Won-Jae, In‐Kyu You, Sang-Ouk Ryu, et al.. (2001). SrTa₂O₆ Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition. Japanese Journal of Applied Physics. 40(12R). 6941–6941. 41 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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