Nak‐Jin Seong

1.1k total citations
79 papers, 901 citations indexed

About

Nak‐Jin Seong is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Nak‐Jin Seong has authored 79 papers receiving a total of 901 indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Materials Chemistry, 63 papers in Electrical and Electronic Engineering and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Nak‐Jin Seong's work include ZnO doping and properties (38 papers), Semiconductor materials and devices (35 papers) and Thin-Film Transistor Technologies (31 papers). Nak‐Jin Seong is often cited by papers focused on ZnO doping and properties (38 papers), Semiconductor materials and devices (35 papers) and Thin-Film Transistor Technologies (31 papers). Nak‐Jin Seong collaborates with scholars based in South Korea and United States. Nak‐Jin Seong's co-authors include Soon‐Gil Yoon, Kyu-Jeong Choi, Sung‐Min Yoon, Chi‐Sun Hwang, Sung-Min Yoon, Chae‐Ryong Cho, Jong Hyun Park, Jong‐Heon Yang, Anupama Chanda and Seung‐Eun Lee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Nak‐Jin Seong

78 papers receiving 880 citations

Peers

Nak‐Jin Seong

EEE

EOMM

Sang-Ouk Ryu South Korea

Xingwei Ding China

Arfan Bukhtiar China

Avneet Singh India

Ying-Chung Chen Taiwan

Yingfen Wei China

Heesun Bae South Korea

Takahiro Hiramatsu Japan

Chih-Huang Lin China

Hideo Sonohara Japan

Sang-Ouk Ryu South Korea

Nak‐Jin Seong

491 ×0.7

EEE

475 ×0.7

155 ×1.2

EOMM

96 ×1.0

105 ×1.3

Citations per year, relative to Nak‐Jin Seong Nak‐Jin Seong (= 1×) peers Sang-Ouk Ryu

Countries citing papers authored by Nak‐Jin Seong

Since Specialization

Citations

This map shows the geographic impact of Nak‐Jin Seong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nak‐Jin Seong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nak‐Jin Seong more than expected).

Fields of papers citing papers by Nak‐Jin Seong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nak‐Jin Seong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nak‐Jin Seong. The network helps show where Nak‐Jin Seong may publish in the future.

Co-authorship network of co-authors of Nak‐Jin Seong

This figure shows the co-authorship network connecting the top 25 collaborators of Nak‐Jin Seong. A scholar is included among the top collaborators of Nak‐Jin Seong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nak‐Jin Seong. Nak‐Jin Seong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Seong, Nak‐Jin, et al.. (2025). Process design for improvement in device performance of top-gate TFTs using In-Sn-Zn-O channels prepared by thermal atomic-layer deposition. Materials Science in Semiconductor Processing. 190. 109324–109324. 2 indexed citations

Kang, Jiwon, Dong-Hee Lee, Nak‐Jin Seong, et al.. (2024). Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition. Materials Science in Semiconductor Processing. 181. 108665–108665. 1 indexed citations

Seong, Nak‐Jin, et al.. (2024). Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer. Materials Science in Semiconductor Processing. 178. 108476–108476. 6 indexed citations

Seong, Nak‐Jin, et al.. (2024). Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm. Journal of Materials Chemistry C. 12(36). 14455–14468. 3 indexed citations

Seong, Nak‐Jin, et al.. (2024). Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO₂ Gate Stacks With Vertical Channel Configurations. IEEE Electron Device Letters. 45(9). 1673–1676. 3 indexed citations

Lee, Dong-Hee, et al.. (2024). Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor. Electronic Materials Letters. 20(6). 702–710. 2 indexed citations

Seong, Nak‐Jin, et al.. (2023). Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm. Materials Science in Semiconductor Processing. 171. 108025–108025. 8 indexed citations

Seong, Nak‐Jin, Kyu-Jeong Choi, Chi‐Sun Hwang, et al.. (2023). Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration. Nanotechnology. 34(15). 155301–155301. 9 indexed citations

Lee, Dong-Hee, et al.. (2022). Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials. ACS Applied Electronic Materials. 4(12). 6215–6228. 25 indexed citations

10.

Bae, Soohyun, Nak‐Jin Seong, Jong‐Heon Yang, et al.. (2021). Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition. ACS Applied Electronic Materials. 3(11). 4849–4858. 22 indexed citations

11.

Kim, Gi‐Heon, et al.. (2020). Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions. Nanotechnology. 31(43). 435702–435702. 18 indexed citations

12.

Seong, Nak‐Jin, et al.. (2019). Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition. Journal of Materials Chemistry C. 7(20). 6059–6069. 37 indexed citations

13.

Yoon, Sung-Min, et al.. (2018). Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition. RSC Advances. 8(44). 25014–25020. 49 indexed citations

14.

Seong, Nak‐Jin, et al.. (2010). Control of the shielding and the transmission of an electro-magnetic wave (∼GHz) by a visible light using flexible CdS films grown on polymer substrates. Sensors and Actuators B Chemical. 147(1). 67–72. 3 indexed citations

15.

Cường, Nguyễn Duy, et al.. (2009). Electrical Properties of Bi[sub 2]Mg[sub 2/3]Nb[sub 4/3]O[sub 7] Multilayer Films Combined with Percolative Capacitors. Journal of The Electrochemical Society. 156(9). G134–G134. 6 indexed citations

16.

Seong, Nak‐Jin, et al.. (2008). Nanocluster deposition for oxide thin film growth at near room temperature. Nanotechnology. 19(43). 435305–435305. 15 indexed citations

17.

Pammi, S.V.N., et al.. (2008). Interfacial and electrical properties of ZrxTi1−xO4 (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(4). 1338–1343. 2 indexed citations

18.

Seong, Nak‐Jin, Younghun Jo, Myung‐Hwa Jung, & Soon‐Gil Yoon. (2006). Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition. Journal of Magnetism and Magnetic Materials. 304(1). e140–e142. 3 indexed citations

19.

Seong, Nak‐Jin, et al.. (1997). Preparation and Characteristics of Ferroelectric $\textrm{SrBi}_{2}\textrm{Ta}_{2}\textrm{O}_{9}$ Thin Films Deposited by Plasma-Enhanced Metalorganic Chemical Vapor Deposition Technique with Various Deposition Temperatures. Korean Journal of Materials Research. 7(5). 381–385. 2 indexed citations

20.

Seong, Nak‐Jin, et al.. (1994). MOving Spread Target signal simulation. The Journal of the Acoustical Society of Korea. 13(2). 30–37. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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