S. Leibenzeder

822 total citations
13 papers, 623 citations indexed

About

S. Leibenzeder is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Leibenzeder has authored 13 papers receiving a total of 623 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Leibenzeder's work include Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and devices (6 papers) and Semiconductor materials and interfaces (5 papers). S. Leibenzeder is often cited by papers focused on Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and devices (6 papers) and Semiconductor materials and interfaces (5 papers). S. Leibenzeder collaborates with scholars based in Germany, United States and Canada. S. Leibenzeder's co-authors include René Stein, Gerhard Pensl, W. Suttrop, Adolf Schöner, W. J. Choyke, Werner Götz, K. Maier, W. Wilkening, W. J. Choyke and A. Dörnen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physica B Condensed Matter.

In The Last Decade

S. Leibenzeder

13 papers receiving 600 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Leibenzeder Germany 9 584 175 122 118 39 13 623
Anatoly M. Strel’chuk Russia 14 672 1.2× 244 1.4× 54 0.4× 103 0.9× 42 1.1× 95 712
E. Sörman Sweden 11 540 0.9× 193 1.1× 85 0.7× 271 2.3× 35 0.9× 26 621
Mitsuhiro Shigeta Japan 10 384 0.7× 204 1.2× 70 0.6× 97 0.8× 32 0.8× 28 460
Véronique Soulière France 11 312 0.5× 153 0.9× 68 0.6× 122 1.0× 25 0.6× 74 388
P. E. R. Nordquist United States 7 261 0.4× 130 0.7× 37 0.3× 67 0.6× 18 0.5× 21 301
Yu. M. Popov Russia 11 206 0.4× 186 1.1× 45 0.4× 94 0.8× 28 0.7× 54 380
M. K. Linnarsson Sweden 10 341 0.6× 115 0.7× 49 0.4× 73 0.6× 41 1.1× 17 408
M. F. da Silva Portugal 11 208 0.4× 295 1.7× 122 1.0× 201 1.7× 25 0.6× 17 425
C. Ance France 11 359 0.6× 199 1.1× 27 0.2× 242 2.1× 24 0.6× 35 425
N. Achtziger Germany 12 405 0.7× 156 0.9× 51 0.4× 75 0.6× 16 0.4× 45 462

Countries citing papers authored by S. Leibenzeder

Since Specialization
Citations

This map shows the geographic impact of S. Leibenzeder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Leibenzeder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Leibenzeder more than expected).

Fields of papers citing papers by S. Leibenzeder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Leibenzeder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Leibenzeder. The network helps show where S. Leibenzeder may publish in the future.

Co-authorship network of co-authors of S. Leibenzeder

This figure shows the co-authorship network connecting the top 25 collaborators of S. Leibenzeder. A scholar is included among the top collaborators of S. Leibenzeder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Leibenzeder. S. Leibenzeder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Haberstroh, Ch., W. Suttrop, Adolf Schöner, et al.. (1993). CVD growth and characterization of single-crystalline 6H silicon carbide. Physica B Condensed Matter. 185(1-4). 75–78. 16 indexed citations
2.
Götz, Werner, Adolf Schöner, Gerhard Pensl, et al.. (1993). Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC. Materials science forum. 117-118. 495–500. 3 indexed citations
3.
Götz, Werner, Adolf Schöner, Gerhard Pensl, et al.. (1993). Nitrogen donors in 4H-silicon carbide. Journal of Applied Physics. 73(7). 3332–3338. 158 indexed citations
4.
Götz, Werner, Adolf Schöner, W. Suttrop, et al.. (1993). Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC). Materials science forum. 143-147. 69–74. 1 indexed citations
5.
Maier, K., J. Schneider, W. Wilkening, S. Leibenzeder, & René Stein. (1992). Electron spin resonance studies of transition metal deep level impurities in SiC. Materials Science and Engineering B. 11(1-4). 27–30. 37 indexed citations
6.
Suttrop, W., Adolf Schöner, M. Schadt, et al.. (1992). Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC. Journal of Applied Physics. 72(11). 5437–5442. 58 indexed citations
7.
Stein, René, et al.. (1992). Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation. Materials Science and Engineering B. 11(1-4). 69–71. 67 indexed citations
8.
Suttrop, W., Gerhard Pensl, W. J. Choyke, René Stein, & S. Leibenzeder. (1992). Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide. Journal of Applied Physics. 72(8). 3708–3713. 128 indexed citations
9.
Dörnen, A., et al.. (1992). Luminescence and Absorption of Vanadium (V<sup>4+</sup>): In 6H-Silicon Carbide. Materials science forum. 83-87. 1213–1218. 16 indexed citations
10.
Rupp, Robin, et al.. (1991). Growth of GaAs single crystals by the floating zone technique under microgravity. Advances in Space Research. 11(7). 297–304. 11 indexed citations
11.
Schneider, J., H. Müller, K. Maier, et al.. (1990). Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide. Applied Physics Letters. 56(12). 1184–1186. 121 indexed citations
12.
Leibenzeder, S., et al.. (1985). High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light-emitting diodes with graded band gap. Applied Physics Letters. 46(10). 978–980. 1 indexed citations
13.
Rühle, W. W., Lars Hoffmann, & S. Leibenzeder. (1982). Direct evidence for photon recycling in p-(Ga,Al)As:Si with a graded band gap. Journal of Applied Physics. 53(5). 3765–3768. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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