C. Schulte‐Braucks

734 total citations
29 papers, 597 citations indexed

About

C. Schulte‐Braucks is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Schulte‐Braucks has authored 29 papers receiving a total of 597 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Schulte‐Braucks's work include Semiconductor materials and devices (16 papers), Photonic and Optical Devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). C. Schulte‐Braucks is often cited by papers focused on Semiconductor materials and devices (16 papers), Photonic and Optical Devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). C. Schulte‐Braucks collaborates with scholars based in Germany, France and United Kingdom. C. Schulte‐Braucks's co-authors include S. Mantl, Dan Buca, Nils von den Driesch, Z. Ikonić, Qing‐Tai Zhao, Daniela Stange, Jean‐Michel Hartmann, Stephan Wirths, A. T. Tiedemann and Gregor Mußler and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

C. Schulte‐Braucks

29 papers receiving 572 citations

Peers

C. Schulte‐Braucks

EEE

AMPO

Federica Gencarelli Belgium

Haiyun Xue China

David S. Sukhdeo United States

Davide Cutaia Switzerland

Yiwen Rong United States

Denis Rainko Germany

Errol Sanchez United States

Solomon Ojo United States

Mathias Prost France

Samson Edmond France

Federica Gencarelli Belgium

C. Schulte‐Braucks

702 ×1.2

EEE

342 ×1.6

AMPO

234 ×1.3

97 ×1.9

30 ×1.2

Citations per year, relative to C. Schulte‐Braucks C. Schulte‐Braucks (= 1×) peers Federica Gencarelli

Countries citing papers authored by C. Schulte‐Braucks

Since Specialization

Citations

This map shows the geographic impact of C. Schulte‐Braucks's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Schulte‐Braucks with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Schulte‐Braucks more than expected).

Fields of papers citing papers by C. Schulte‐Braucks

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Schulte‐Braucks. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Schulte‐Braucks. The network helps show where C. Schulte‐Braucks may publish in the future.

Co-authorship network of co-authors of C. Schulte‐Braucks

This figure shows the co-authorship network connecting the top 25 collaborators of C. Schulte‐Braucks. A scholar is included among the top collaborators of C. Schulte‐Braucks based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Schulte‐Braucks. C. Schulte‐Braucks is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Buca, Dan, C. Schulte‐Braucks, Nils von den Driesch, et al.. (2018). Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors. 1–1. 2 indexed citations

Glass, S., Nils von den Driesch, Sebastiano Strangio, et al.. (2017). Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors. Applied Physics Letters. 111(26). 6 indexed citations

Schulte‐Braucks, C., Redwan N. Sajjad, R. Ghosh, et al.. (2017). Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors. IEEE Transactions on Electron Devices. 64(10). 4354–4362. 26 indexed citations

Afanas’ev, V. V., C. Schulte‐Braucks, Stephan Wirths, J. Schubert, & Dan Buca. (2017). Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1−xSnx, SiyGe1−x−ySnx) with Al2O3. Microelectronic Engineering. 178. 141–144. 1 indexed citations

Schulte‐Braucks, C., K. Narimani, S. Glass, et al.. (2017). Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks. ACS Applied Materials & Interfaces. 9(10). 9102–9109. 7 indexed citations

Schulte‐Braucks, C.. (2017). Untersuchung von GeSn als neuartiger Gruppe IV Halbleiter für elektronische Anwendungen. RWTH Publications (RWTH Aachen). 4 indexed citations

Schulte‐Braucks, C., S. Glass, Nils von den Driesch, et al.. (2017). Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts. Journal of Applied Physics. 121(20). 22 indexed citations

Schulte‐Braucks, C., Redwan N. Sajjad, R. Ghosh, et al.. (2016). Performance benchmarking of p-type In<inf>0.65</inf>Ga<inf>0.35</inf>As/GaAs<inf>0.4</inf>Sb<inf>0.6</inf> and Ge/Ge<inf>0.93</inf>Sn<inf>0.07</inf> hetero-junction tunnel FETs. 19.6.1–19.6.4. 19 indexed citations

Narimani, K., Gia Vinh Luong, C. Schulte‐Braucks, et al.. (2016). Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs. 62. 178–181. 1 indexed citations

10.

Rainko, Denis, Daniela Stange, Nils von den Driesch, et al.. (2016). (Si)GeSn nanostructures for light emitters. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9891. 98910W–98910W. 2 indexed citations

11.

Glass, S., C. Schulte‐Braucks, K. Narimani, et al.. (2016). Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs. IEEE Transactions on Electron Devices. 63(11). 4173–4178. 17 indexed citations

12.

Schulte‐Braucks, C., Nils von den Driesch, S. Glass, et al.. (2016). Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys. ACS Applied Materials & Interfaces. 8(20). 13133–13139. 19 indexed citations

13.

Glass, S., C. Schulte‐Braucks, K. Narimani, et al.. (2015). Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS. 22.3.1–22.3.4. 47 indexed citations

14.

Wirths, Stephan, H. Sigg, Detlev Grützmacher, et al.. (2015). Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform. DORA PSI (Paul Scherrer Institute). 13. 2.6.1–2.6.4. 4 indexed citations

15.

Zhao, Qing‐Tai, Lars Knoll, Gia Vinh Luong, et al.. (2015). (Invited) Si Nanowire Tunnel FETs for Energy Efficient Nanoelectronics. ECS Transactions. 66(4). 69–78. 4 indexed citations

16.

Zhao, Qing‐Tai, C. Schulte‐Braucks, Lars Knoll, et al.. (2015). Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications. IEEE Journal of the Electron Devices Society. 3(3). 103–114. 70 indexed citations

17.

Schulte‐Braucks, C., et al.. (2014). Experimental demonstration of improved analog device performance in GAA-NW-TFETs. Institutional Research Information System (University of Udine). 178–181. 7 indexed citations

18.

Schulte‐Braucks, C., Lars Knoll, Gia Vinh Luong, et al.. (2014). Experimental demonstration of inverter and NAND operation in p-TFET logic at ultra-low supply voltages down to V<inf>DD</inf> = 0.15 V. 98. 23–24. 5 indexed citations

19.

Zhao, Qing‐Tai, Lars Knoll, C. Schulte‐Braucks, et al.. (2014). Strained silicon nanowire tunnel FETs and NAND logic. 98. 1–4. 1 indexed citations

20.

Pawlak, Michael, M. Maliński, F. Firszt, et al.. (2014). Investigation of carrier scattering mechanisms in n-Cd1−xMgxSe single crystals using Fourier Transform Infrared Spectroscopy. Infrared Physics & Technology. 64. 115–118. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact