S. G. Ingram

414 total citations
23 papers, 355 citations indexed

About

S. G. Ingram is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, S. G. Ingram has authored 23 papers receiving a total of 355 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 3 papers in Mechanics of Materials. Recurrent topics in S. G. Ingram's work include Semiconductor materials and devices (13 papers), Plasma Diagnostics and Applications (11 papers) and Quantum and electron transport phenomena (5 papers). S. G. Ingram is often cited by papers focused on Semiconductor materials and devices (13 papers), Plasma Diagnostics and Applications (11 papers) and Quantum and electron transport phenomena (5 papers). S. G. Ingram collaborates with scholars based in United Kingdom, India and Canada. S. G. Ingram's co-authors include Nicholas Braithwaite, T.K.S. Wong, V.J. Law, M. Tewordt, G. A. C. Jones, B. M. Annaratone, Richard Hornsey, G. A. C. Jones, A. N. Broers and D. A. Ritchie and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Microwave Theory and Techniques and Journal of Physics D Applied Physics.

In The Last Decade

S. G. Ingram

21 papers receiving 337 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. G. Ingram United Kingdom	9	328	104	100	52	36	23	355
R.E. Hurley United Kingdom	11	225 0.7×	63 0.6×	128 1.3×	125 2.4×	38 1.1×	30	321
J.R. Cozens United Kingdom	11	376 1.1×	33 0.3×	129 1.3×	18 0.3×	28 0.8×	25	447
Alex Paterson United States	14	542 1.7×	209 2.0×	129 1.3×	100 1.9×	37 1.0×	24	571
John Mazurowski United States	11	233 0.7×	61 0.6×	169 1.7×	183 3.5×	36 1.0×	41	418
Kazuki Denpoh Japan	12	448 1.4×	184 1.8×	129 1.3×	75 1.4×	25 0.7×	34	497
K. Ohata Japan	11	102 0.3×	115 1.1×	80 0.8×	113 2.2×	56 1.6×	30	336
Oleg A. Popov Russia	10	420 1.3×	119 1.1×	105 1.1×	84 1.6×	12 0.3×	27	447
A. Brockhaus Germany	12	371 1.1×	157 1.5×	83 0.8×	81 1.6×	12 0.3×	24	423
T. Okumura Japan	10	274 0.8×	41 0.4×	197 2.0×	58 1.1×	9 0.3×	31	327
Toshiki Nakano Japan	14	500 1.5×	232 2.2×	158 1.6×	133 2.6×	18 0.5×	40	575

Countries citing papers authored by S. G. Ingram

Since Specialization

Citations

This map shows the geographic impact of S. G. Ingram's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. G. Ingram with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. G. Ingram more than expected).

Fields of papers citing papers by S. G. Ingram

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. G. Ingram. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. G. Ingram. The network helps show where S. G. Ingram may publish in the future.

Co-authorship network of co-authors of S. G. Ingram

This figure shows the co-authorship network connecting the top 25 collaborators of S. G. Ingram. A scholar is included among the top collaborators of S. G. Ingram based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. G. Ingram. S. G. Ingram is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ingram, S. G., et al.. (2002). Frame transfer area array sensor with vertical antiblooming and novel readout for enhanced performance. 189–192. 1 indexed citations

Dykaar, D. R., et al.. (2001). High-speed VGA CMOS image sensor. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4306. 111–111. 1 indexed citations

Ingram, S. G., et al.. (1996). The use of active traveling-wave structures in GaAs MMIC's. IEEE Transactions on Microwave Theory and Techniques. 44(6). 956–960. 2 indexed citations

Ingram, S. G., et al.. (1995). Performance of double heterostructure unipolar transistors in high frequency power applications. Solid-State Electronics. 38(9). 1663–1665. 1 indexed citations

Law, V.J., Nicholas Braithwaite, S. G. Ingram, David C. Clary, & G. A. C. Jones. (1994). Investigation of modulated radio frequency plasma etching of GaAs using Langmuir probes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(6). 3337–3341. 3 indexed citations

Wong, T.K.S. & S. G. Ingram. (1993). Amorphous GeCu alloy for low temperature resistor fabrication. Journal of Applied Physics. 73(6). 3102–3104.

Wong, T.K.S. & S. G. Ingram. (1993). Observational of Fowler-Nordheim tunnelling at atmospheric pressure using Au/Ti lateral tunnel diodes. Journal of Physics D Applied Physics. 26(6). 979–985. 27 indexed citations

Wong, T.K.S. & S. G. Ingram. (1992). Fabrication of sub-20 nm trenches in silicon nitride using CHF3/O2 reactive ion etching and oblique metallization. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(6). 2393–2397. 6 indexed citations

Ingram, S. G., D. A. Ritchie, & G. A. C. Jones. (1992). Effect of temperature changes during MBE of ultra-thin GaAs/AlAs heterostructures on performance of Al gates grown in situ. Semiconductor Science and Technology. 7(7). 968–971. 2 indexed citations

10.

Wong, T.K.S., et al.. (1992). Fabrication of sub-20 nm structures in silicon nitride using CHF3/O2 rie. Microelectronic Engineering. 17(1-4). 531–534. 6 indexed citations

11.

Law, V.J., M. Tewordt, S. G. Ingram, & G. A. C. Jones. (1991). Alkane based plasma etching of GaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(3). 1449–1455. 24 indexed citations

12.

Law, V.J., S. G. Ingram, M. Tewordt, & G. A. C. Jones. (1991). Reactive ion etching of GaAs using CH₄: in He, Ne and Ar. Semiconductor Science and Technology. 6(5). 411–413. 8 indexed citations

13.

Law, V.J., S. G. Ingram, & G. A. C. Jones. (1991). ECR/magnetic mirror coupled plasma etching of GaAs using CH₄:H₂:Ar. Semiconductor Science and Technology. 6(9). 945–947. 2 indexed citations

14.

Ingram, S. G., P. J. Simpson, Victor J. Law, D. A. Ritchie, & G. A. C. Jones. (1991). Helium radio-frequency-plasma GaAs device isolation: Application to an in-plane gated quantum wire transistor. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(6). 2908–2911. 3 indexed citations

15.

Law, Victor J., et al.. (1991). CH₄ :H₂ :Ar rf/ECR Plasma Etching of GaAs and InP. MRS Proceedings. 223. 1 indexed citations

16.

Ingram, S. G., et al.. (1990). Design and use of a gridded probe in a low-pressure rf argon discharge. Review of Scientific Instruments. 61(7). 1883–1891. 18 indexed citations

17.

Ingram, S. G.. (1990). The influence of substrate topography on ion bombardment in plasma etching. Journal of Applied Physics. 68(2). 500–504. 66 indexed citations

18.

Ingram, S. G., et al.. (1990). The plasma-sheath boundary with fast monoenergetic electrons. Journal of Physics D Applied Physics. 23(12). 1648–1651. 28 indexed citations

19.

Ingram, S. G. & Nicholas Braithwaite. (1988). Space Potential and Ion Energies in a Low Pressure Discharge Containing at least Two Negative Species. MRS Proceedings. 117. 8 indexed citations

20.

Ingram, S. G. & Nicholas Braithwaite. (1988). Ion and electron energy analysis at a surface in an RF discharge. Journal of Physics D Applied Physics. 21(10). 1496–1503. 113 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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