M. Tewordt

497 total citations
22 papers, 389 citations indexed

About

M. Tewordt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Tewordt has authored 22 papers receiving a total of 389 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in M. Tewordt's work include Quantum and electron transport phenomena (14 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor materials and devices (10 papers). M. Tewordt is often cited by papers focused on Quantum and electron transport phenomena (14 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor materials and devices (10 papers). M. Tewordt collaborates with scholars based in United Kingdom and Germany. M. Tewordt's co-authors include V.J. Law, D. A. Ritchie, J. E. F. Frost, M. Pepper, G. A. C. Jones, Michael J. Kelly, Thomas Schmidt, A. Förster, K. von Klitzing and H. Lüth and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Surface Science.

In The Last Decade

M. Tewordt

21 papers receiving 378 citations

Peers

M. Tewordt

AMPO

EEE

CMP

Peter A. Maksym United Kingdom

A. T. Galick United States

M. W. Dellow United Kingdom

C. Minot France

Maximilian G. Schultz Switzerland

L. E. Klyachkin Russia

O. Újsághy Hungary

T.J. Foster United Kingdom

T. Hatano Japan

M. L. Polianski Switzerland

Peter A. Maksym United Kingdom

M. Tewordt

477 ×1.4

AMPO

121 ×0.5

EEE

107 ×2.1

CMP

60 ×1.4

25 ×1.6

Citations per year, relative to M. Tewordt M. Tewordt (= 1×) peers Peter A. Maksym

Countries citing papers authored by M. Tewordt

Since Specialization

Citations

This map shows the geographic impact of M. Tewordt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Tewordt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Tewordt more than expected).

Fields of papers citing papers by M. Tewordt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Tewordt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Tewordt. The network helps show where M. Tewordt may publish in the future.

Co-authorship network of co-authors of M. Tewordt

This figure shows the co-authorship network connecting the top 25 collaborators of M. Tewordt. A scholar is included among the top collaborators of M. Tewordt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Tewordt. M. Tewordt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schmidt, Thomas, M. Tewordt, R. J. Haug, et al.. (1996). Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures. Solid-State Electronics. 40(1-8). 15–19. 8 indexed citations

Schmidt, Thomas, M. Tewordt, Robert H. Blick, et al.. (1995). Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures. Physical review. B, Condensed matter. 51(8). 5570–5573. 94 indexed citations

Tewordt, M., L. Martı́n-Moreno, J. T. Nicholls, et al.. (1994). Vertical tunneling between two quantum dots in a transverse magnetic field. Physical review. B, Condensed matter. 49(12). 8071–8075. 15 indexed citations

Tewordt, M., V.J. Law, J. T. Nicholls, et al.. (1994). Single-electron tunneling and Coulomb charging effects in ultrasmall double-barrier heterostructures. Solid-State Electronics. 37(4-6). 793–799. 11 indexed citations

Ritchie, D. A., et al.. (1993). Chloromethane-based reactive ion etching of III–V semiconductor materials. Vacuum. 44(3-4). 233–237. 2 indexed citations

Law, V.J., M. Tewordt, G. A. C. Jones, & D. A. Ritchie. (1993). Plasma etching of GaAs and AlGaAs using 300 kHz and 13.56 MHz excitation frequency. Semiconductor Science and Technology. 8(9). 1775–1778. 1 indexed citations

Law, Victor J., M. Tewordt, David C. Clary, & G. A. C. Jones. (1993). 300 kHz pulse plasma etching of GaAs using a mixture of ClCH3 and H2. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(6). 2262–2265. 2 indexed citations

Tewordt, M., M J Kelly, V.J. Law, et al.. (1992). Fine structure in the I–V characteristics of GaAs/AlGaAs submicron diameter triple barrier diodes. Surface Science. 267(1-3). 388–391. 3 indexed citations

Tewordt, M., J. T. Nicholls, M. Pepper, et al.. (1992). Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes. Physical review. B, Condensed matter. 45(24). 14407–14410. 53 indexed citations

10.

Kelly, Michael J., A. R. Hamilton, M. Tewordt, et al.. (1992). Quasi-one-dimensional transport in semiconductor microstructures. Physica Scripta. T45. 200–205.

11.

Tewordt, M., V.J. Law, M J Kelly, et al.. (1992). Resonant tunneling in coupled quantum dots. Applied Physics Letters. 60(5). 595–597. 30 indexed citations

12.

Tewordt, M., L. Martı́n-Moreno, V.J. Law, et al.. (1992). Resonant tunneling in anAlxGa1−xAs/GaAs quantum dot as a function of magnetic field. Physical review. B, Condensed matter. 46(7). 3948–3952. 38 indexed citations

13.

Law, V.J., M. Tewordt, S. G. Ingram, & G. A. C. Jones. (1991). Alkane based plasma etching of GaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(3). 1449–1455. 24 indexed citations

14.

Tewordt, M., V.J. Law, Michael J. Kelly, et al.. (1991). Direct experimental determination of the tunnelling time and transmission probability of electrons through a resonant tunnelling structure. Journal of Physics Condensed Matter. 2(45). 8969–8975. 51 indexed citations

15.

Law, V.J., S. G. Ingram, M. Tewordt, & G. A. C. Jones. (1991). Reactive ion etching of GaAs using CH₄: in He, Ne and Ar. Semiconductor Science and Technology. 6(5). 411–413. 8 indexed citations

16.

Tewordt, M., M J Kelly, V.J. Law, et al.. (1991). Tunneling between totally quantized levels in GaAs/AlGaAs asymmetric triple-barrier heterostructures in high magnetic fields. Applied Physics Letters. 59(7). 803–805. 13 indexed citations

17.

Tewordt, M., D. A. Ritchie, Michael J. Kelly, et al.. (1991). Electron-state lifetimes in submicron diameter resonant tunneling diodes. Applied Physics Letters. 59(16). 1966–1968. 18 indexed citations

18.

Law, Victor J., G. A. C. Jones, & M. Tewordt. (1990). Propane: hydrogen MORIE of GaAs. Semiconductor Science and Technology. 5(9). 1001–1003. 2 indexed citations

19.

Law, V.J., G. A. C. Jones, & M. Tewordt. (1990). Substrate temperature dependence of GaAs etch rates in CH₄:H₂MORIE. Semiconductor Science and Technology. 5(3). 281–283. 1 indexed citations

20.

Law, V.J., G. A. C. Jones, N. K. Patel, & M. Tewordt. (1990). Loading effects in CH4 and H2 Morie of GaAs. Microelectronic Engineering. 11(1-4). 611–614. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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