M. Tewordt

497 citations

22 papers · 389 indexed · h-index 11

Co-authors: V.J. Law D. A. Ritchie J. E. F. Frost M. Pepper G. A. C. Jones Michael J. Kelly Thomas Schmidt A. Förster
Topics: Quantum and electron transport phenomena (14 papers)Semiconductor Quantum Structures and Devices (12 papers)Semiconductor materials and devices (10 papers)
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Physical review. B, Condensed matter Applied Physics Letters Surface Science
Partner nations: United Kingdom Germany

In The Last Decade

M. Tewordt

21 papers receiving 378 citations

Peers

Countries citing papers authored by M. Tewordt

Since Specialization

Citations

This map shows the geographic impact of M. Tewordt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Tewordt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Tewordt more than expected).

Fields of papers citing papers by M. Tewordt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Tewordt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Tewordt. The network helps show where M. Tewordt may publish in the future.

Co-authorship network of co-authors of M. Tewordt

This figure shows the co-authorship network connecting the top 25 collaborators of M. Tewordt. A scholar is included among the top collaborators of M. Tewordt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Tewordt. M. Tewordt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures 1996 ·Solid-State Electronics ·Thomas Schmidt,M. Tewordt,R. J. Haug,K. von Klitzing,A. Förster,H. Lüth	8
2	Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures 1995 ·Physical review. B, Condensed matter ·Thomas Schmidt,M. Tewordt,Robert H. Blick,R. J. Haug,Daniela Pfannkuche,K. von Klitzing,A. Förster,H. Lüth	94
3	Vertical tunneling between two quantum dots in a transverse magnetic field 1994 ·Physical review. B, Condensed matter ·M. Tewordt,(unknown),L. Martı́n-Moreno,J. T. Nicholls,(unknown),Michael J. Kelly,V.J. Law,D. A. Ritchie,J. E. F. Frost,G. A. C. Jones,M. Pepper	15
4	Single-electron tunneling and Coulomb charging effects in ultrasmall double-barrier heterostructures 1994 ·Solid-State Electronics ·M. Tewordt,V.J. Law,J. T. Nicholls,L. Martı́n-Moreno,D. A. Ritchie,Michael J. Kelly,M. Pepper,J. E. F. Frost,R. Newbury,G. A. C. Jones	11
5	Chloromethane-based reactive ion etching of III–V semiconductor materials 1993 ·Vacuum ·(unknown),(unknown),D. A. Ritchie,M. Tewordt	2
6	Plasma etching of GaAs and AlGaAs using 300 kHz and 13.56 MHz excitation frequency 1993 ·Semiconductor Science and Technology ·V.J. Law,M. Tewordt,G. A. C. Jones,D. A. Ritchie	1
7	300 kHz pulse plasma etching of GaAs using a mixture of ClCH3 and H2 1993 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Victor J. Law,M. Tewordt,David C. Clary,G. A. C. Jones	2
8	Fine structure in the I–V characteristics of GaAs/AlGaAs submicron diameter triple barrier diodes 1992 ·Surface Science ·(unknown),M. Tewordt,(unknown),M J Kelly,V.J. Law,J. E. F. Frost,D. A. Ritchie,G. A. C. Jones,M. Pepper	3
9	Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes 1992 ·Physical review. B, Condensed matter ·M. Tewordt,(unknown),J. T. Nicholls,M. Pepper,Michael J. Kelly,V.J. Law,D. A. Ritchie,J. E. F. Frost,G. A. C. Jones	53
10	Quasi-one-dimensional transport in semiconductor microstructures 1992 ·Physica Scripta ·Michael J. Kelly,(unknown),A. R. Hamilton,M. Tewordt,M. Pepper,V.J. Law,J. E. F. Frost,D. A. Ritchie,G. A. C. Jones,D. G. Hasko,H. Ahmed	0
11	Resonant tunneling in coupled quantum dots 1992 ·Applied Physics Letters ·M. Tewordt,(unknown),V.J. Law,(unknown),M J Kelly,D. A. Ritchie,A. C. Churchill,J. E. F. Frost,(unknown),G. A. C. Jones	30
12	Resonant tunneling in anAlxGa1−xAs/GaAs quantum dot as a function of magnetic field 1992 ·Physical review. B, Condensed matter ·M. Tewordt,L. Martı́n-Moreno,V.J. Law,M J Kelly,R. Newbury,M. Pepper,D. A. Ritchie,J. E. F. Frost,G. A. C. Jones	38
13	Alkane based plasma etching of GaAs 1991 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·V.J. Law,M. Tewordt,S. G. Ingram,G. A. C. Jones	24
14	Direct experimental determination of the tunnelling time and transmission probability of electrons through a resonant tunnelling structure 1991 ·Journal of Physics Condensed Matter ·M. Tewordt,V.J. Law,Michael J. Kelly,R. Newbury,M. Pepper,D. C. Peacock,J. E. F. Frost,D. A. Ritchie,G. A. C. Jones	51
15	Reactive ion etching of GaAs using CH₄: in He, Ne and Ar 1991 ·Semiconductor Science and Technology ·V.J. Law,S. G. Ingram,M. Tewordt,G. A. C. Jones	8
16	Tunneling between totally quantized levels in GaAs/AlGaAs asymmetric triple-barrier heterostructures in high magnetic fields 1991 ·Applied Physics Letters ·(unknown),M. Tewordt,(unknown),M J Kelly,V.J. Law,D. R. Mace,J. E. F. Frost,D. A. Ritchie,G. A. C. Jones,M. Pepper	13
17	Electron-state lifetimes in submicron diameter resonant tunneling diodes 1991 ·Applied Physics Letters ·M. Tewordt,D. A. Ritchie,(unknown),Michael J. Kelly,V.J. Law,R. Newbury,M. Pepper,J. E. F. Frost,G. A. C. Jones,W. M. Stobbs	18
18	Propane: hydrogen MORIE of GaAs 1990 ·Semiconductor Science and Technology ·Victor J. Law,G. A. C. Jones,M. Tewordt	2
19	Substrate temperature dependence of GaAs etch rates in CH₄:H₂MORIE 1990 ·Semiconductor Science and Technology ·V.J. Law,G. A. C. Jones,M. Tewordt	1
20	Loading effects in CH4 and H2 Morie of GaAs 1990 ·Microelectronic Engineering ·V.J. Law,G. A. C. Jones,N. K. Patel,M. Tewordt	1

About M. Tewordt

M. Tewordt is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 22 papers that have together received 389 indexed citations. Recurring topics across this work include Quantum and electron transport phenomena (14 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor materials and devices (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (346 citations), Condensed Matter Physics (51 citations) and Electrical and Electronic Engineering (242 citations). M. Tewordt has collaborated with scholars based in United Kingdom and Germany. Frequent co-authors include V.J. Law, D. A. Ritchie, J. E. F. Frost, M. Pepper, G. A. C. Jones, Michael J. Kelly, Thomas Schmidt, A. Förster, K. von Klitzing and H. Lüth. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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