T. J. Eijkemans

1.8k total citations · 1 hit paper
45 papers, 1.4k citations indexed

About

T. J. Eijkemans is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, T. J. Eijkemans has authored 45 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Atomic and Molecular Physics, and Optics, 37 papers in Electrical and Electronic Engineering and 16 papers in Materials Chemistry. Recurrent topics in T. J. Eijkemans's work include Semiconductor Quantum Structures and Devices (40 papers), Semiconductor Lasers and Optical Devices (23 papers) and Quantum Dots Synthesis And Properties (14 papers). T. J. Eijkemans is often cited by papers focused on Semiconductor Quantum Structures and Devices (40 papers), Semiconductor Lasers and Optical Devices (23 papers) and Quantum Dots Synthesis And Properties (14 papers). T. J. Eijkemans collaborates with scholars based in Netherlands, Belgium and Germany. T. J. Eijkemans's co-authors include R. Nötzel, J. H. Wolter, F. W. M. van Otten, T. de Vries, G. J. Hamhuis, M.K. Smit, Barry Smalbrugge, P. J. van Veldhoven, Yok-Siang Oei and Erik Jan Geluk and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nature Photonics.

In The Last Decade

T. J. Eijkemans

44 papers receiving 1.4k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Lasing in metallic-coated nanocavities

2007 602 citations M.T. Hill, Yok-Siang Oei et al. Nature Photonics profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
T. J. Eijkemans	1.1k	1.1k	627	312	189	45	1.4k
Peter J. van Veldhoven	1.2k 1.1×	1.0k 0.9×	1.3k 2.1×	145 0.5×	553 2.9×	15	1.8k
V. Calvo	1.4k 1.3×	794 0.7×	588 0.9×	458 1.5×	52 0.3×	97	1.6k
R. Germann	1.3k 1.2×	774 0.7×	137 0.2×	387 1.2×	120 0.6×	78	1.6k
Junichi Fujikata	979 0.9×	517 0.5×	376 0.6×	125 0.4×	179 0.9×	118	1.2k
Jennifer T. Choy	314 0.3×	530 0.5×	361 0.6×	402 1.3×	130 0.7×	36	880
R. N. Bicknell-Tassius	679 0.6×	611 0.6×	83 0.1×	398 1.3×	124 0.7×	67	990
V. V. Naletov	459 0.4×	988 0.9×	196 0.3×	110 0.4×	243 1.3×	43	1.1k
H. Yokoyama	854 0.8×	840 0.8×	199 0.3×	148 0.5×	48 0.3×	45	1.1k
Paul A. George	710 0.7×	661 0.6×	583 0.9×	746 2.4×	228 1.2×	17	1.4k
X. Checoury	859 0.8×	758 0.7×	288 0.5×	227 0.7×	42 0.2×	51	1.0k

Countries citing papers authored by T. J. Eijkemans

Since Specialization

Citations

This map shows the geographic impact of T. J. Eijkemans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. J. Eijkemans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. J. Eijkemans more than expected).

Fields of papers citing papers by T. J. Eijkemans

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. J. Eijkemans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. J. Eijkemans. The network helps show where T. J. Eijkemans may publish in the future.

Co-authorship network of co-authors of T. J. Eijkemans

This figure shows the co-authorship network connecting the top 25 collaborators of T. J. Eijkemans. A scholar is included among the top collaborators of T. J. Eijkemans based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. J. Eijkemans. T. J. Eijkemans is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Otten, F. W. M. van, et al.. (2007). Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100). Journal of Crystal Growth. 305(1). 63–69. 21 indexed citations

Hill, M.T., Yok-Siang Oei, Barry Smalbrugge, et al.. (2007). Lasing in metallic-coated nanocavities. Nature Photonics. 1(10). 589–594. 602 indexed citations breakdown →

Otten, F. W. M. van, et al.. (2007). Formation of linear InAs quantum dot arrays on InGaAsP∕InP (100) by self-organized anisotropic strain engineering and their optical properties. Journal of Applied Physics. 102(5). 17 indexed citations

Haverkort, J. E. M., et al.. (2006). Time-resolved reflectivity of low-temperature grown InAs/GaAs quantum dots. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6195. 619520–619520. 2 indexed citations

Zhou, Dayong, S. Anantathanasarn, P. J. van Veldhoven, et al.. (2006). Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55μm region by selective-area metal organic vapor-phase epitaxy. Journal of Applied Physics. 100(11). 3 indexed citations

Weert, Maarten H. M. van, O. Wunnicke, Aarnoud L. Roest, et al.. (2006). Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning. Applied Physics Letters. 88(4). 68 indexed citations

Anantathanasarn, S., R. Nötzel, P. J. van Veldhoven, et al.. (2006). Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots. Applied Physics Letters. 88(6). 36 indexed citations

Nötzel, R., S. Anantathanasarn, René P. J. van Veldhoven, et al.. (2006). Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing. Japanese Journal of Applied Physics. 45(8S). 6544–6544. 53 indexed citations

Nötzel, R., et al.. (2006). Power dependent photoluminescence of lateral quantum dot molecules: Indication of extended electron states. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(11). 3869–3872.

10.

Gong, Qian, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, & J. H. Wolter. (2005). Shape transition from InAs quantum dash to quantum dot on InP(311)A. Journal of Crystal Growth. 280(3-4). 413–418. 3 indexed citations

11.

Haverkort, J. E. M., et al.. (2005). Dichroic reflection of InAs∕GaAs quantum dots. Journal of Applied Physics. 98(7). 3 indexed citations

12.

Anantathanasarn, S., R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, & J. H. Wolter. (2005). Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics. 98(1). 52 indexed citations

13.

Nötzel, R., et al.. (2003). Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy. Journal of Crystal Growth. 251(1-4). 135–139. 7 indexed citations

14.

Nötzel, R., et al.. (2003). Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing. Journal of Applied Physics. 93(10). 5953–5958. 9 indexed citations

15.

Mano, Takaaki, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, & J. H. Wolter. (2002). Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy. Journal of Applied Physics. 92(7). 4043–4046. 20 indexed citations

16.

Mano, Takaaki, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, & J. H. Wolter. (2002). Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template. Applied Physics Letters. 81(9). 1705–1707. 75 indexed citations

17.

Gong, Qian, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, & J. H. Wolter. (2002). Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots. Applied Physics Letters. 81(10). 1887–1889. 14 indexed citations

18.

Eijkemans, T. J., et al.. (1995). Influence of CH₄/H₂reactive ion etching on electrical and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. Materials Science and Technology. 11(1). 41–45. 1 indexed citations

19.

Eijkemans, T. J., et al.. (1993). Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching. Journal of Applied Physics. 74(10). 6242–6246. 7 indexed citations

20.

Pereira, Roberto Guimar�ães, M. Van Hove, W. De Raedt, et al.. (1991). Damage Introduced by Chdamage Introduced by CH₄/H₂ Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs. MRS Proceedings. 240. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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