Hans Kosina

5.5k total citations
263 papers, 3.8k citations indexed

About

Hans Kosina is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Hans Kosina has authored 263 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 204 papers in Electrical and Electronic Engineering, 117 papers in Atomic and Molecular Physics, and Optics and 74 papers in Materials Chemistry. Recurrent topics in Hans Kosina's work include Advancements in Semiconductor Devices and Circuit Design (167 papers), Semiconductor materials and devices (132 papers) and Quantum and electron transport phenomena (63 papers). Hans Kosina is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (167 papers), Semiconductor materials and devices (132 papers) and Quantum and electron transport phenomena (63 papers). Hans Kosina collaborates with scholars based in Austria, Iran and United States. Hans Kosina's co-authors include S. Selberherr, Neophytos Neophytou, Mahdi Pourfath, Christoph Wasshuber, Tibor Grasser, Mihail Nedjalkov, E. Ungersboeck, Viktor Sverdlov, Morteza Fathipour and Ting-wei Tang and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hans Kosina

247 papers receiving 3.6k citations

Peers

Countries citing papers authored by Hans Kosina

Since Specialization

Citations

This map shows the geographic impact of Hans Kosina's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hans Kosina with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hans Kosina more than expected).

Fields of papers citing papers by Hans Kosina

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hans Kosina. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hans Kosina. The network helps show where Hans Kosina may publish in the future.

Co-authorship network of co-authors of Hans Kosina

This figure shows the co-authorship network connecting the top 25 collaborators of Hans Kosina. A scholar is included among the top collaborators of Hans Kosina based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hans Kosina. Hans Kosina is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment 2022 ·IEEE Transactions on Electron Devices ·Mischa Thesberg, (unknown), (unknown), Ben Kaczer, Philippe Roussel, Zlatan Stanojević, O. Baumgartner, (unknown), M. Karner, Hans Kosina	8
2	Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si 2013 ·Nanotechnology ·Neophytos Neophytou, Xanthippi Zianni, Hans Kosina, Stefano Frabboni, Bruno Lorenzi, Dario Narducci	122
3	Subband engineering in n-type silicon nanowires using strain and confinement 2011 ·Solid-State Electronics ·Zlatan Stanojević, Viktor Sverdlov, O. Baumgartner, Hans Kosina	6
4	Strained MOSFETs on ordered SiGe dots 2011 ·Solid-State Electronics ·(unknown), Hans Kosina, S. Selberherr, Jianjun Zhang, N. Hrauda, J. Stangl, (unknown), Guglielmo Vastola, Anna Marzegalli, Francesco Montalenti, Leo Miglio	3
5	Integration of MOSFETs with SiGe dots as stressor material 2011 ·Solid-State Electronics ·Lis K. Nanver, Vladimir Jovanović, (unknown), J. Moers, Detlev Grützmacher, (unknown), N. Hrauda, M. Stoffel, Fabio Pezzoli, Oliver G. Schmidt, Leo Miglio, Hans Kosina, Anna Marzegalli, Guglielmo Vastola, Gregor Mußler, J. Stangl, G. Bauer, (unknown), Emiliano Bonera	14
6	Strained MOSFETs on ordered SiGe dots 2010 ·(unknown), Hans Kosina, S. Selberherr, Jianjun Zhang, N. Hrauda, J. Stangl, (unknown), Guglielmo Vastola, Anna Marzegalli, Leo Miglio	1
7	Modeling current transport in ultra-scaled field-effect transistors 2006 ·Microelectronics Reliability ·Viktor Sverdlov, Hans Kosina, S. Selberherr	3
8	Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices 2005 ·TechConnect Briefs ·(unknown), A. U. Gehring, Hans Kosina, Tibor Grasser, S. Selberherr, Christian Doppler	4
9	The effect of device geometry on the static and dynamic response of carbon nanotube field effect transistors 2005 ·Mahdi Pourfath, Hans Kosina, Byoung‐Ho Cheong, Wanjun Park, S. Selberherr	5
10	Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors 2005 ·Mahdi Pourfath, Hans Kosina, Byoung‐Ho Cheong, Wanjun Park, S. Selberherr	6
11	Investigation of the Electron Mobility in Strained Si_ Ge_x at High Ge Composition( the IEEE International Conference on SISPAD '02) 2003 ·IEICE Transactions on Electronics ·(unknown), Hans Kosina, S. Selberherr	1
12	Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering 2003 ·TechConnect Briefs ·Hans Kosina, Mihail Nedjalkov, S. Selberherr, (unknown)	6
13	Investigation of the Electron Mobility in Strained Si 1-x Ge x at High Ge Composition 2003 ·IEICE Transactions on Electronics ·(unknown), Hans Kosina, S. Selberherr	4
14	The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation 2003 ·Journal of Applied Physics ·Mihail Nedjalkov, Hans Kosina, S. Selberherr	5
15	A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations 2003 ·Journal of Computational Electronics ·Hans Kosina, Mihail Nedjalkov, S. Selberherr	20
16	A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation 2001 ·TechConnect Briefs ·Tibor Grasser, Hans Kosina, (unknown), S. Selberherr	2
17	Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing 2001 ·TechConnect Briefs ·Hans Kosina, Mihail Nedjalkov, S. Selberherr	3
18	Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors 1997 ·Materials science forum ·(unknown), Hans Kosina, (unknown), S. Selberherr	4
19	MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices 1995 ·European Solid-State Device Research Conference ·(unknown), Hans Kosina, (unknown), S. Selberherr	10
20	Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors 1990 ·Japanese Journal of Applied Physics ·Hans Kosina, S. Selberherr	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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