T. Kaneda

1.1k total citations
50 papers, 782 citations indexed

About

T. Kaneda is a scholar working on Electrical and Electronic Engineering, Instrumentation and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Kaneda has authored 50 papers receiving a total of 782 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 37 papers in Instrumentation and 34 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Kaneda's work include Advanced Optical Sensing Technologies (37 papers), Semiconductor Quantum Structures and Devices (30 papers) and Advanced Semiconductor Detectors and Materials (16 papers). T. Kaneda is often cited by papers focused on Advanced Optical Sensing Technologies (37 papers), Semiconductor Quantum Structures and Devices (30 papers) and Advanced Semiconductor Detectors and Materials (16 papers). T. Kaneda collaborates with scholars based in Japan, United States and Fiji. T. Kaneda's co-authors include Takashi Mikawa, Toyoshi Yamaoka, F. Osaka, Masanori Ito, H. Ando, H. Kanbe, T. Kimura, Susumu Yamazaki, Osamu Mikami and Yutaka Kishi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

T. Kaneda

49 papers receiving 709 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Kaneda Japan 16 713 490 259 68 62 50 782
H. Kanbe Japan 17 597 0.8× 493 1.0× 135 0.5× 71 1.0× 83 1.3× 52 710
T. Torikai Japan 17 713 1.0× 443 0.9× 131 0.5× 37 0.5× 25 0.4× 69 749
K. Taguchi Japan 16 642 0.9× 476 1.0× 263 1.0× 46 0.7× 26 0.4× 47 696
R. B. Emmons United States 10 531 0.7× 310 0.6× 203 0.8× 28 0.4× 29 0.5× 22 588
M. M. Tashima United States 14 376 0.5× 340 0.7× 146 0.6× 39 0.6× 57 0.9× 27 483
D. T. Cheung United States 14 660 0.9× 447 0.9× 28 0.1× 65 1.0× 163 2.6× 42 724
K.A. Anselm United States 14 668 0.9× 495 1.0× 281 1.1× 37 0.5× 56 0.9× 40 756
Yuichi Matsushima Japan 21 1.2k 1.7× 870 1.8× 51 0.2× 85 1.3× 81 1.3× 116 1.3k
Qiugui Zhou United States 15 563 0.8× 308 0.6× 92 0.4× 59 0.9× 45 0.7× 46 656
C. Besikci Türkiye 17 559 0.8× 441 0.9× 69 0.3× 127 1.9× 89 1.4× 44 640

Countries citing papers authored by T. Kaneda

Since Specialization
Citations

This map shows the geographic impact of T. Kaneda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Kaneda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Kaneda more than expected).

Fields of papers citing papers by T. Kaneda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Kaneda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Kaneda. The network helps show where T. Kaneda may publish in the future.

Co-authorship network of co-authors of T. Kaneda

This figure shows the co-authorship network connecting the top 25 collaborators of T. Kaneda. A scholar is included among the top collaborators of T. Kaneda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Kaneda. T. Kaneda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kobayashi, M., Tomoko Shirai, & T. Kaneda. (2003). High reliability planar InGaAs avalanche photodiodes. 729–732. 2 indexed citations
2.
Osaka, F., Takashi Mikawa, & T. Kaneda. (1985). Impact ionization coefficients of electrons and holes in. IEEE Journal of Quantum Electronics. 21(9). 1326–1338. 84 indexed citations
3.
Osaka, F., Takashi Mikawa, & T. Kaneda. (1984). Electron and hole ionization coefficients in (100) oriented Ga0.33In0.67As0.70P0.30. Applied Physics Letters. 45(3). 292–293. 9 indexed citations
4.
Kobayashi, M., Susumu Yamazaki, & T. Kaneda. (1984). Planar InP/GaInAsP/GaInAs buried-structure avalanche photodiode. Applied Physics Letters. 45(7). 759–761. 14 indexed citations
5.
Yasuda, K., et al.. (1983). Incident wavelength dependence of pulse responses in InP/InGaAsP/InGaAs avalanche photodiodes. Electronics Letters. 19(17). 662–663. 1 indexed citations
6.
Shirai, Tomoko, et al.. (1983). InGaAs avalanche photodiodes for 1 μm wavelength region. Electronics Letters. 19(14). 534–536. 14 indexed citations
7.
Shirai, Tomoko, et al.. (1982). 1.0–1.6 μm planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure. Electronics Letters. 18(13). 575–577. 9 indexed citations
8.
Yamasaki, Susumu, et al.. (1982). Multiplication noise in planar InP/InGaAsP heterostructure avalanche photodiodes. Applied Physics Letters. 40(6). 532–533. 6 indexed citations
9.
Mikawa, Takashi, et al.. (1982). Chemical Etching of Germanium with H3PO4–H2O2–H2O Solution. Japanese Journal of Applied Physics. 21(11R). 1616–1616. 28 indexed citations
10.
Ito, Masanori, et al.. (1981). Tunneling currents in In0.53Ga0.47As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodes. Solid-State Electronics. 24(5). 421–424. 18 indexed citations
11.
Kaneda, T., et al.. (1981). Fully ion-implanted p+-n germanium avalanche photodiodes. Applied Physics Letters. 38(6). 429–431. 13 indexed citations
12.
Ando, Hiroaki, Hiroshi Kanbe, Masanori Ito, & T. Kaneda. (1980). Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode. Japanese Journal of Applied Physics. 19(6). L277–L277. 54 indexed citations
13.
Mikawa, Takashi, et al.. (1980). Crystal orientation dependence of ionization rates in germanium. Applied Physics Letters. 37(4). 387–389. 38 indexed citations
14.
Kaneda, T., et al.. (1979). The crystal orientation dependence of multiplication noise in germanium avalanche photodiodes. Applied Physics Letters. 34(10). 692–694. 5 indexed citations
15.
Ito, Masanori, et al.. (1978). Ionization rates for electrons and holes in GaAs. Journal of Applied Physics. 49(8). 4607–4608. 47 indexed citations
16.
Yamaoka, Toyoshi, et al.. (1976). Silicon avalanche photodiodes. 12. 87–95. 10 indexed citations
17.
Kaneda, T., et al.. (1976). Avalanche buildup time of silicon reach-through photodiodes. Journal of Applied Physics. 47(11). 4960–4963. 15 indexed citations
18.
Kaneda, T., et al.. (1973). The Frequency Response of Germanium Avalanche Photodiodes. Japanese Journal of Applied Physics. 12(10). 1652–1653. 4 indexed citations
19.
Kaneda, T., et al.. (1973). Avalanche Built-Up Time of the Germanium Avalanche Photodiode. Japanese Journal of Applied Physics. 12(7). 1091–1092. 15 indexed citations
20.
Kaneda, T., et al.. (1970). The Degeneracy of Hg Level in Ge. Japanese Journal of Applied Physics. 9(9). 1184–1184. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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