R. Sorge

548 total citations
51 papers, 423 citations indexed

About

R. Sorge is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Sorge has authored 51 papers receiving a total of 423 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Sorge's work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Radio Frequency Integrated Circuit Design (16 papers). R. Sorge is often cited by papers focused on Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Radio Frequency Integrated Circuit Design (16 papers). R. Sorge collaborates with scholars based in Germany, Spain and Switzerland. R. Sorge's co-authors include J. Da̧browski, Christian Wenger, G. Lippert, H.‐J. Müssig, P. Zaumseil, F. Faccio, Carlos Fuentes, G. Blanchot, Stefano Michelis and Silvia Orlandi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

R. Sorge

48 papers receiving 407 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Sorge Germany 13 390 106 46 41 22 51 423
S.T. Liu United States 10 383 1.0× 80 0.8× 24 0.5× 56 1.4× 79 3.6× 42 456
Maxim Sidorov United States 8 147 0.4× 95 0.9× 31 0.7× 22 0.5× 39 1.8× 41 223
D. Åberg Sweden 9 322 0.8× 50 0.5× 14 0.3× 82 2.0× 26 1.2× 28 345
Donald B. King United States 8 238 0.6× 43 0.4× 7 0.2× 32 0.8× 28 1.3× 30 311
M. Rödder United States 16 782 2.0× 161 1.5× 21 0.5× 79 1.9× 59 2.7× 73 797
Tien‐Ko Wang Taiwan 13 412 1.1× 167 1.6× 16 0.3× 33 0.8× 52 2.4× 80 577
Sivananda Kanakasabapathy United States 7 175 0.4× 42 0.4× 51 1.1× 49 1.2× 21 1.0× 13 217
K. Kastner Germany 5 85 0.2× 37 0.3× 71 1.5× 67 1.6× 17 0.8× 9 154
M.C. Driver United States 9 295 0.8× 37 0.3× 34 0.7× 78 1.9× 26 1.2× 28 318
A.J. Auberton‐Hervé France 14 641 1.6× 93 0.9× 10 0.2× 90 2.2× 85 3.9× 50 692

Countries citing papers authored by R. Sorge

Since Specialization
Citations

This map shows the geographic impact of R. Sorge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Sorge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Sorge more than expected).

Fields of papers citing papers by R. Sorge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Sorge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Sorge. The network helps show where R. Sorge may publish in the future.

Co-authorship network of co-authors of R. Sorge

This figure shows the co-authorship network connecting the top 25 collaborators of R. Sorge. A scholar is included among the top collaborators of R. Sorge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Sorge. R. Sorge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wipf, Christian, R. Sorge, & J. Schmidt. (2016). Evaluation of LDMOS transistors for 10 Gbps switched mode applications and X-band power amplifier. 57–59. 2 indexed citations
2.
Martinéz, P. Fernandéz, F.R. Palomo, Sergio Cañas Díez, et al.. (2011). Simulation methodology for dose effects in lateral DMOS transistors. Microelectronics Journal. 43(1). 50–56. 7 indexed citations
3.
Scheytt, J. Christoph, et al.. (2011). German Point Of Load Converter Initiative To Design A Pol Converter Demonstrator For Space Application. 690. 125. 1 indexed citations
4.
Grüner, Daniel, R. Sorge, A. Z. Markos, Olof Bengtsson, & Georg Boeck. (2010). 6 GHz medium voltage LDMOS power amplifier based on load/source pull characterization. 178–181. 3 indexed citations
5.
Sorge, R., A. Fischer, Andreas Mai, et al.. (2010). Integrated Si-LDMOS transistors for 11 GHz X-Band power amplifier applications. 90–93. 1 indexed citations
6.
Mai, Andreas, H. Rücker, & R. Sorge. (2009). Impact of the drift region profile on performance and reliability of RF-LDMOS transistors. 100–103. 4 indexed citations
7.
Lukosius, Mindaugas, Christian Wenger, Sergej Pasko, et al.. (2008). Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications. IEEE Transactions on Electron Devices. 55(8). 2273–2277. 18 indexed citations
8.
Wenger, Christian, Mindaugas Lukosius, R. Sorge, et al.. (2008). Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices. Microelectronic Engineering. 85(8). 1762–1765. 26 indexed citations
9.
Lukosius, Mindaugas, Christian Wenger, Thomas Schroeder, et al.. (2007). Atomic - vapour - deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications. Microelectronic Engineering. 84(9-10). 2165–2168. 13 indexed citations
10.
Mohapatra, Nihar R., K.‐E. Ehwald, R. Sorge, et al.. (2006). A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology. 1–4. 12 indexed citations
11.
Wenger, Christian, R. Sorge, Thomas Schroeder, et al.. (2005). MIM capacitors using amorphous high-k PrTixOy dielectrics. Microelectronic Engineering. 80. 313–316. 16 indexed citations
12.
Lippert, G., J. Da̧browski, V. Melnik, et al.. (2005). Si Segregation into Pr2O3 and La2O3 high-k gate oxides. Applied Physics Letters. 86(4). 42902–42902. 21 indexed citations
13.
Da̧browski, J., Christian Wenger, Grzegorz Łupina, et al.. (2004). Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2. MRS Proceedings. 811. 1 indexed citations
14.
Wenger, Christian, J. Da̧browski, P. Zaumseil, et al.. (2004). First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics. Materials Science in Semiconductor Processing. 7(4-6). 227–230. 44 indexed citations
15.
Sorge, R.. (2003). Implant dose monitoring by MOS C–V measurement. Microelectronics Reliability. 43(1). 167–171.
16.
Sorge, R., et al.. (1998). Rapid MOS-CV Generation Lifetime Mapping Technique for the Characterisation of High Quality Silicon. European Solid-State Device Research Conference. 296–299.
17.
Sorge, R.. (1998). Non-quasistatic simultaneous HF/LF-CV measurements for rapid characterization of MOS structures. Solid-State Electronics. 42(5). 761–770. 4 indexed citations
18.
Sorge, R.. (1995). Double-sweep LF-CV technique for generation rate determination in MOS capacitors. Solid-State Electronics. 38(8). 1479–1484. 3 indexed citations
19.
Sorge, R.. (1994). I ( t ) technique for generationrate determination in implanted MOSstructures. Electronics Letters. 30(23). 1986–1988. 1 indexed citations
20.
Sorge, R.. (1994). The double sweep HF-CV technique for generation lifetime determination in MOS capacitors. Solid-State Electronics. 37(1). 217–219. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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