P. Kringhøj

744 total citations
35 papers, 580 citations indexed

About

P. Kringhøj is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Kringhøj has authored 35 papers receiving a total of 580 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in P. Kringhøj's work include Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and interfaces (17 papers) and Thin-Film Transistor Technologies (10 papers). P. Kringhøj is often cited by papers focused on Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and interfaces (17 papers) and Thin-Film Transistor Technologies (10 papers). P. Kringhøj collaborates with scholars based in Denmark, Australia and United States. P. Kringhøj's co-authors include J. Bøttiger, A. Nylandsted Larsen, C. Budtz-Jørgensen, J. Chevallier, R. G. Elliman, K. O. Schweitz, M.A. van den Berg, K.N. Andersen, Norbert Schell and W. Matz and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

P. Kringhøj

35 papers receiving 564 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Kringhøj Denmark 13 348 301 253 176 90 35 580
D.K. Reinhard United States 17 443 1.3× 487 1.6× 281 1.1× 159 0.9× 62 0.7× 49 727
M. F. C. Willemsen Netherlands 13 429 1.2× 189 0.6× 139 0.5× 124 0.7× 35 0.4× 22 539
J.C. Oberlin France 15 400 1.1× 241 0.8× 86 0.3× 254 1.4× 48 0.5× 41 617
M. Mišina Czechia 11 242 0.7× 236 0.8× 309 1.2× 51 0.3× 65 0.7× 23 430
N. Koshino Japan 8 157 0.5× 264 0.9× 170 0.7× 104 0.6× 39 0.4× 16 391
V.M. Anishchik Belarus 17 132 0.4× 454 1.5× 435 1.7× 118 0.7× 227 2.5× 59 637
R. N. Jacobs United States 18 531 1.5× 464 1.5× 338 1.3× 359 2.0× 177 2.0× 66 904
G. A. Al‐Jumaily United States 13 321 0.9× 235 0.8× 156 0.6× 82 0.5× 41 0.5× 40 529
Kiyoshi Miyake Japan 17 520 1.5× 219 0.7× 174 0.7× 178 1.0× 42 0.5× 51 719
H.‐J. Hinneberg Germany 12 247 0.7× 289 1.0× 185 0.7× 231 1.3× 60 0.7× 39 509

Countries citing papers authored by P. Kringhøj

Since Specialization
Citations

This map shows the geographic impact of P. Kringhøj's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Kringhøj with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Kringhøj more than expected).

Fields of papers citing papers by P. Kringhøj

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Kringhøj. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Kringhøj. The network helps show where P. Kringhøj may publish in the future.

Co-authorship network of co-authors of P. Kringhøj

This figure shows the co-authorship network connecting the top 25 collaborators of P. Kringhøj. A scholar is included among the top collaborators of P. Kringhøj based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Kringhøj. P. Kringhøj is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jones, K. S., Mark E. Law, David S. Simons, et al.. (2002). The effect of end of range loops on transient enhanced diffusion in Si. 618–621. 1 indexed citations
2.
Budtz-Jørgensen, C., J. Bøttiger, & P. Kringhøj. (2001). Energetic ion bombardment of the grounded anode in pulsed DC-glow discharges. Surface and Coatings Technology. 137(1). 104–110. 28 indexed citations
3.
Budtz-Jørgensen, C., P. Kringhøj, Jørgen Feldbæk Nielsen, & J. Bøttiger. (2001). Chemical and physical sputtering of aluminium and gold samples using Ar–H2 DC-glow discharges. Surface and Coatings Technology. 135(2-3). 299–306. 13 indexed citations
4.
Kringhøj, P., et al.. (2001). On glow-discharge sputtering of iron and steels in a commercial deposition plant. Surface and Coatings Technology. 137(2-3). 277–283. 2 indexed citations
5.
Andersen, K.N., et al.. (2000). Deposition, microstructure and mechanical and tribological properties of magnetron sputtered TiN/TiAlN multilayers. Surface and Coatings Technology. 123(2-3). 219–226. 67 indexed citations
6.
Budtz-Jørgensen, C., J. Bøttiger, & P. Kringhøj. (2000). Energy spectra of particles bombarding the cathode in glow discharges. Vacuum. 56(1). 9–13. 10 indexed citations
7.
Berg, M.A. van den, C. Budtz-Jørgensen, K. O. Schweitz, et al.. (2000). On plasma nitriding of steels. Surface and Coatings Technology. 124(1). 25–31. 93 indexed citations
8.
Budtz-Jørgensen, C., P. Kringhøj, & J. Bøttiger. (1999). The critical role of hydrogen for physical sputtering with Ar–H2 glow discharges. Surface and Coatings Technology. 116-119. 938–943. 33 indexed citations
9.
Mesli, A., P. Kringhøj, & A. Nylandsted Larsen. (1997). Gold-Related Levels in Relaxed Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Layers: A Study of the Pinning Effect. Materials science forum. 258-263. 145–150. 1 indexed citations
10.
Elliman, R. G., et al.. (1997). The effect of ion irradiation on the thermal stability of GeSi/Si strained-layer heterostructures. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 127-128. 397–400. 4 indexed citations
11.
Zou, Jin, et al.. (1996). The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures. MRS Proceedings. 442. 1 indexed citations
12.
Kringhøj, P., et al.. (1996). Diffusion of Sb in Strained and Relaxed Si and SiGe. Physical Review Letters. 76(18). 3372–3375. 86 indexed citations
13.
Kringhøj, P., et al.. (1995). The residual electrically active damage in ion implanted Si. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 106(1-4). 248–251. 2 indexed citations
14.
Ridgway, M. C., et al.. (1995). Ion implantation of group IV or VI elements for n-type doping of InP. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 311–314. 9 indexed citations
15.
Kringhøj, P. & R. G. Elliman. (1994). Solid-Phase Epitaxial Crystallization of Strain-RelaxedSi1−xGexAlloy Layers. Physical Review Letters. 73(6). 858–861. 44 indexed citations
16.
Elliman, R. G., et al.. (1993). Solid-Phase Epitaxial Crystallisation of GexSi1-x Alloy Layers. MRS Proceedings. 316. 6 indexed citations
17.
Elliman, R. G., et al.. (1993). Solid-Phase Epitaxial Crystallisation Of GexSi1−x Alloy Layers. MRS Proceedings. 321. 2 indexed citations
18.
Kringhøj, P. & B. G. Svensson. (1991). Impurity Profiles in InP from Ion Implantation at Elevated Temperatures. MRS Proceedings. 240. 2 indexed citations
19.
Kringhøj, P.. (1991). N+-p diodes in InP formed by implantation of Ge+ or Se+ and rapid thermal annealing. Materials Science and Engineering B. 9(1-3). 315–318. 6 indexed citations
20.
Kringhøj, P., A. Nylandsted Larsen, & J. W. Petersen. (1989). Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.. MRS Proceedings. 163. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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