R. Meaudre

1.1k total citations
82 papers, 968 citations indexed

About

R. Meaudre is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, R. Meaudre has authored 82 papers receiving a total of 968 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 64 papers in Materials Chemistry and 7 papers in Computational Mechanics. Recurrent topics in R. Meaudre's work include Thin-Film Transistor Technologies (60 papers), Silicon Nanostructures and Photoluminescence (49 papers) and Silicon and Solar Cell Technologies (44 papers). R. Meaudre is often cited by papers focused on Thin-Film Transistor Technologies (60 papers), Silicon Nanostructures and Photoluminescence (49 papers) and Silicon and Solar Cell Technologies (44 papers). R. Meaudre collaborates with scholars based in France, Russia and India. R. Meaudre's co-authors include M. Meaudre, S. Vignoli, R. Butté, Jean‐Paul Kleider, Christophe Longeaud, Pere Roca i Cabarrocas, Pablo Jensen, J. Tardy, P. Roca i Cabarrocas and S. Hamma and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Meaudre

81 papers receiving 929 citations

Peers

Countries citing papers authored by R. Meaudre

Since Specialization

Citations

This map shows the geographic impact of R. Meaudre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Meaudre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Meaudre more than expected).

Fields of papers citing papers by R. Meaudre

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Meaudre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Meaudre. The network helps show where R. Meaudre may publish in the future.

Co-authorship network of co-authors of R. Meaudre

This figure shows the co-authorship network connecting the top 25 collaborators of R. Meaudre. A scholar is included among the top collaborators of R. Meaudre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Meaudre. R. Meaudre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors 2004 ·Applied Physics Letters ·R. Meaudre, M. Meaudre	8
2	Argon dilution of silane as an alternative to hydrogen dilution for stable and high efficiency silicon thin films solar cells 2004 ·Journal of Non-Crystalline Solids ·Phalguni Chaudhuri, R. Meaudre, Christophe Longeaud	12
3	Effect of preparation conditions on diamond cluster formation in bulk nanoporous carbon 2003 ·Diamond and Related Materials ·A. M. Danishevskiı̆, (unknown), (unknown), S. K. Gordeev, (unknown), C. Jardin, R. Meaudre, Olivier Marty	9
4	Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures 2002 ·Philosophical Magazine Letters ·R. Meaudre, M. Meaudre	5
5	Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C 2000 ·Journal of Non-Crystalline Solids ·R. Butté, S. Vignoli, M. Meaudre, R. Meaudre, Olivier Marty, Lucien Saviot, Pere Roca i Cabarrocas	34
6	Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon 1999 ·Philosophical Magazine B ·R. Butté, R. Meaudre, M. Meaudre, S. Vignoli, (unknown), Jean‐Paul Kleider, (unknown)	8
7	Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation 1999 ·Philosophical Magazine Letters ·R. Meaudre, M. Meaudre, R. Butté, S. Vignoli	12
8	Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon 1998 ·Journal of Non-Crystalline Solids ·M. Meaudre, R. Meaudre	1
9	Thermal annealing of light-induced defects in p-i-p and n-i-n hydrogenated amorphous silicon structures: Influence of hole and electron injection 1995 ·Journal of Applied Physics ·M. Meaudre, R. Meaudre, S. Vignoli	5
10	Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination 1994 ·Physical review. B, Condensed matter ·S. Vignoli, R. Meaudre, M. Meaudre	10
11	Influence of illumination during thermal quenching and relaxation in undoped amorphous silicon 1992 ·Physical review. B, Condensed matter ·M. Meaudre, R. Meaudre	2
12	Absence of thermal quenching effects in undoped amorphous silicon deposited by the pecvd of he - diluted silane 1991 ·Journal of Non-Crystalline Solids ·R. Meaudre, M. Meaudre, Pere Roca i Cabarrocas, (unknown), Y. Bouizem, M.L. Thèye	9
13	Thermal-equilibrium processes and electronic transport in undoped hydrogenated amorphous silicon 1988 ·Philosophical Magazine Letters ·R. Meaudre, M. Meaudre, Pablo Jensen, Germain Guiraud	12
14	Structure of amorphous hydrogenated silicon-nitrogen alloys studied by Fourier transform infrared spectroscopy 1986 ·Journal of Molecular Structure ·(unknown), Pham V. Huong, R. Meaudre	0
15	Wide optical gap, undoped, photoconductive a-SixN1-x:H Prepared by D.C. Sputtering 1983 ·Solid State Communications ·R. Meaudre, J. Tardy	16
16	CORRELATION BETWEEN CONDUCTIVITY, ELECTRON SPIN RESONANCE AND OPTICAL ABSORPTION IN RF SPUTTERED SiO₂FILMS 1981 ·Le Journal de Physique Colloques ·M. Meaudre, R. Meaudre, J. Tardy, Bernard Tribollet	1
17	DC current transport in rf sputtered SiO2 films in the temperature range 77–357 K 1981 ·Journal of Non-Crystalline Solids ·R. Meaudre, M. Meaudre	13
18	Transient and alternating currents in insulators or semiconductors: Influence of deep traps 1979 ·Physical review. B, Condensed matter ·R. Meaudre, M. Meaudre	1
19	Electrical response of materials with recombining space charge 1977 ·Journal of Physics C Solid State Physics ·J. Ross Macdonald, Donald R. Franceschetti, R. Meaudre	12
20	Transferts de charges dans un milieu diélectrique. Etude de courants transitoires 1972 ·Revue de Physique Appliquée ·R. Meaudre, (unknown)	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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