Piotr Wiśniewski

1.4k total citations
15 papers, 64 citations indexed

About

Piotr Wiśniewski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Piotr Wiśniewski has authored 15 papers receiving a total of 64 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in Piotr Wiśniewski's work include Semiconductor materials and devices (9 papers), Advanced Memory and Neural Computing (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Piotr Wiśniewski is often cited by papers focused on Semiconductor materials and devices (9 papers), Advanced Memory and Neural Computing (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Piotr Wiśniewski collaborates with scholars based in Poland, Russia and France. Piotr Wiśniewski's co-authors include B. Majkusiak, J. Jasiński, Mateusz Słowikowski, W. Knap, S. L. Rumyantsev, G. Cywiński, Ryszard Piramidowicz, P. Prystawko, Dmytro B. But and A. Khachapuridze and has published in prestigious journals such as IEEE Transactions on Electron Devices, Materials and Solid-State Electronics.

In The Last Decade

Piotr Wiśniewski

12 papers receiving 64 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Piotr Wiśniewski Poland 5 56 13 13 11 6 15 64
J. Gellanki Sweden 4 51 0.9× 11 0.8× 7 0.5× 9 0.8× 26 4.3× 7 82
S. Kanakasabapathy United States 5 64 1.1× 36 2.8× 14 1.1× 13 1.2× 6 85
D. Henry France 5 61 1.1× 13 1.0× 16 1.2× 11 1.0× 7 72
Sam Holt United Kingdom 2 115 2.1× 7 0.5× 16 1.2× 6 0.5× 2 0.3× 2 123
Qamar Ul Wahab Sweden 5 51 0.9× 23 1.8× 10 0.8× 6 0.5× 5 0.8× 9 63
Keitaro Ito Japan 5 19 0.3× 10 0.8× 33 2.5× 8 0.7× 13 47
C. S. Miller United States 5 26 0.5× 12 0.9× 22 1.7× 6 0.5× 1 0.2× 10 63
Thomas Neyer United States 8 121 2.2× 23 1.8× 7 0.5× 8 0.7× 23 145
Peter Gray United States 6 98 1.8× 10 0.8× 12 0.9× 6 0.5× 14 98
D. Petit France 5 40 0.7× 18 1.4× 37 2.8× 6 0.5× 13 50

Countries citing papers authored by Piotr Wiśniewski

Since Specialization
Citations

This map shows the geographic impact of Piotr Wiśniewski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Piotr Wiśniewski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Piotr Wiśniewski more than expected).

Fields of papers citing papers by Piotr Wiśniewski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Piotr Wiśniewski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Piotr Wiśniewski. The network helps show where Piotr Wiśniewski may publish in the future.

Co-authorship network of co-authors of Piotr Wiśniewski

This figure shows the co-authorship network connecting the top 25 collaborators of Piotr Wiśniewski. A scholar is included among the top collaborators of Piotr Wiśniewski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Piotr Wiśniewski. Piotr Wiśniewski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Stopiński, Stanisław, Piotr Wiśniewski, Mateusz Słowikowski, et al.. (2025). Simulation platform and model library for MIRPIC: a new photonic integration platform for the mid-IR spectral range. 26–26.
2.
Jasiński, J., et al.. (2025). Study of RRAM devices with PECVD silicon-oxide resistive switching layer. Solid-State Electronics. 229. 109208–109208.
3.
Wiśniewski, Piotr, et al.. (2023). Study of silicon-oxide RRAM devices based on complex impedance spectroscopy. Solid-State Electronics. 208. 108732–108732. 3 indexed citations
4.
Wiśniewski, Piotr & B. Majkusiak. (2022). Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures. Materials. 15(8). 2733–2733. 4 indexed citations
5.
Słowikowski, Mateusz, et al.. (2022). Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform. Materials. 15(4). 1398–1398. 13 indexed citations
6.
Wiśniewski, Piotr, et al.. (2022). Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices. Micromachines. 13(10). 1641–1641. 8 indexed citations
7.
8.
Wiśniewski, Piotr, et al.. (2021). Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures. 2 indexed citations
9.
Wiśniewski, Piotr & B. Majkusiak. (2020). Modeling the Current–Voltage Characteristics of Ge₁₋ₓSnₓ Electron–Hole Bilayer TFET With Various Compositions. IEEE Transactions on Electron Devices. 67(7). 2738–2744. 1 indexed citations
10.
Wiśniewski, Piotr, et al.. (2020). Tunneling and Resonant Tunneling Effects in the Metal-Ultrathin Oxide-(n+)Silicon Structures. 45. 1–4. 1 indexed citations
11.
Wiśniewski, Piotr & B. Majkusiak. (2018). Modeling the Tunnel Field-Effect Transistor Based on Different Tunneling Path Approaches. IEEE Transactions on Electron Devices. 65(6). 2626–2631. 5 indexed citations
12.
But, Dmytro B., M. Sakowicz, P. Kruszewski, et al.. (2018). AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range. Semiconductor Science and Technology. 34(2). 24002–24002. 11 indexed citations
13.
But, Dmytro B., Krzesimir Nowakowski-Szkudlarek, P. Prystawko, et al.. (2018). A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors. 1–2. 1 indexed citations
14.
Cywiński, G., P. Kruszewski, P. Prystawko, et al.. (2018). Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN. 715–718. 2 indexed citations
15.
Wiśniewski, Piotr, et al.. (2016). Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10175. 101750F–101750F.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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