Thomas Neyer

662 total citations
23 papers, 145 citations indexed

About

Thomas Neyer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Radiology, Nuclear Medicine and Imaging. According to data from OpenAlex, Thomas Neyer has authored 23 papers receiving a total of 145 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 3 papers in Radiology, Nuclear Medicine and Imaging. Recurrent topics in Thomas Neyer's work include Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor materials and devices (8 papers) and Silicon and Solar Cell Technologies (6 papers). Thomas Neyer is often cited by papers focused on Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor materials and devices (8 papers) and Silicon and Solar Cell Technologies (6 papers). Thomas Neyer collaborates with scholars based in United States, Austria and Sweden. Thomas Neyer's co-authors include Andrey O. Konstantinov, Fredrik Allerstam, Martin Domeij, Mehrdad Baghaie Yazdi, J.D. Plummer, Juan Rivas-Davila, Xu Wu, James Victory, Ahmed Soliman and J P R Bolton and has published in prestigious journals such as IEEE Transactions on Electron Devices, Investigative Ophthalmology & Visual Science and Solid-State Electronics.

In The Last Decade

Thomas Neyer

23 papers receiving 132 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Thomas Neyer United States	8	121	23	18	11	8	23	145
Mohan Li China	5	33 0.3×	13 0.6×	35 1.9×	5 0.5×		14	92
H. Seo South Korea	5	46 0.4×	9 0.4×	3 0.2×	18 1.6×		10	95
A. N. Dovbnya Ukraine	4	19 0.2×	17 0.7×	14 0.8×		9 1.1×	30	57
I. Manić Serbia	14	550 4.5×	16 0.7×	4 0.2×		6 0.8×	56	578
T. Budzyński Poland	5	51 0.4×	13 0.6×	2 0.1×	2 0.2×	2 0.3×	11	69
Changlei Guo China	10	210 1.7×	214 9.3×	3 0.2×	3 0.3×	4 0.5×	29	235
Jan Zich Czechia	7	42 0.3×	5 0.2×	10 0.6×		1 0.1×	24	96
Zishan Ali Singapore	6	98 0.8×	67 2.9×	4 0.2×		1 0.1×	10	118
J. Reiche Germany	3	32 0.3×	27 1.2×	7 0.4×			4	39

Countries citing papers authored by Thomas Neyer

Since Specialization

Citations

This map shows the geographic impact of Thomas Neyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Neyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Neyer more than expected).

Fields of papers citing papers by Thomas Neyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Neyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Neyer. The network helps show where Thomas Neyer may publish in the future.

Co-authorship network of co-authors of Thomas Neyer

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Neyer. A scholar is included among the top collaborators of Thomas Neyer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Neyer. Thomas Neyer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Domeij, Martin, et al.. (2022). Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations. Materials science forum. 1062. 554–559. 5 indexed citations

Konstantinov, Andrey O., et al.. (2020). Critical temperature and failure mechanism of SiC Schottky rectifiers in Unclamped Inductive Switching (UIS). 3 indexed citations

Neyer, Thomas, et al.. (2020). Origins of Soft-SwitchingC_ossLosses in SiC Power MOSFETs and Diodes for Resonant Converter Applications. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(4). 4082–4095. 18 indexed citations

Zorn, Christian, Nando Kaminski, Martin Domeij, et al.. (2018). H³TRB Test on 1.2 kV SiC MOSFETs. 1–6. 2 indexed citations

Konstantinov, Andrey O., et al.. (2018). Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers. Solid-State Electronics. 148. 51–57. 8 indexed citations

Victory, James, Mehrdad Baghaie Yazdi, Kwangwon Lee, et al.. (2017). A physically based scalable SPICE model for silicon carbide power MOSFETs. 2678–2684. 15 indexed citations

Domeij, Martin, Benedetto Buono, Krister Gumaelius, et al.. (2017). Device Simulation Modeling of 1200 V SiC MOSFETs. 1–6. 1 indexed citations

Domeij, Martin, et al.. (2017). Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence. Materials science forum. 897. 222–225. 5 indexed citations

Schaal, Shlomit, Marwa Ismail, Ahmed ElTanboly, et al.. (2016). Subtle Early Changes in Diabetic Retinas Revealed by a Novel Method that Automatically Quantifies Spectral Domain Optical Coherence Tomography (SD-OCT) Images. Investigative Ophthalmology & Visual Science. 57(12). 6324–6324. 1 indexed citations

10.

Neyer, Thomas, Ahmed ElTanboly, Marwa Ismail, et al.. (2016). A Novel Automated Method for the Objective Quantification of Retinal Layers Based on Spectral Domain Optical Coherence Tomography (SD-OCT) Imaging Reveals Sequential Changes in the Normal Retina with Age. Investigative Ophthalmology & Visual Science. 57(12). 5943–5943. 1 indexed citations

11.

Yazdi, Mehrdad Baghaie, et al.. (2016). A concise study of neutron irradiation effects on power MOSFETs and IGBTs. Microelectronics Reliability. 62. 74–78. 11 indexed citations

12.

Ismail, Marwa, Andrew E. Switala, Ahmed Soliman, et al.. (2016). A novel automatic segmentation of healthy and diseased retinal layers from OCT scans. 16 indexed citations

13.

Konstantinov, Andrey O., et al.. (2016). Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness. Materials science forum. 858. 777–781. 5 indexed citations

14.

Konstantinov, Andrey O., et al.. (2015). Silicon Carbide Schottky-Barrier Diode Rectifiers with High Avalanche Robustness. 1–7. 7 indexed citations

15.

Domeij, Martin, et al.. (2015). (Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization. ECS Transactions. 69(11). 29–32. 6 indexed citations

16.

Victory, James, et al.. (2014). A Physically Based Scalable SPICE Model for High-Voltage Super-Junction MOSFETs. 1–8. 5 indexed citations

17.

Buono, Benedetto, Fredrik Allerstam, Martin Domeij, et al.. (2014). Stability of Current Gain in SiC BJTs. Materials science forum. 778-780. 1017–1020. 3 indexed citations

18.

Neyer, Thomas, et al.. (2004). Yield learning using the defect reticle method. 110–114. 1 indexed citations

19.

Neyer, Thomas, P. Schattschneider, J P R Bolton, & G. A. Botton. (1997). Plasmon coupling and finite size effects in metallic multilayers. Journal of Microscopy. 187(3). 184–192. 6 indexed citations

20.

Schattschneider, P., Thomas Neyer, & Eric Ziegler. (1995). Plasmon mode splitting in multilayers, detected by EELS. Journal of Electron Spectroscopy and Related Phenomena. 76. 683–688. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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