C. Fazi

612 citations

32 papers · 468 indexed · h-index 11

Condensed Matter Physics top 10%
Nuclear Energy and Engineering
Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies 18
- Silicon and Solar Cell Technologies 8
- Semiconductor materials and devices 6
- Electromagnetic Compatibility and Noise Suppression 5
- Electrostatic Discharge in Electronics 5
- Microwave Engineering and Waveguides 4
- Integrated Circuits and Semiconductor Failure Analysis 3
Ceramics and Composites
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 5

Co-authors: Philip G. Neudeck R. P. Joshi Reetika Joshi Michael DudleyWei HuangLi Zheng V. F. Tsvetkov Shaoping Wang
Cited by: Condensed Matter Physics Nuclear Energy and Engineering Electrical and Electronic Engineering
Journals: Journal of Applied Physics (5 papers)IEEE Antennas and Wireless Propagation Letters (2 papers)Journal of Physics D Applied Physics (2 papers)
Partner nations: United States United Kingdom

In The Last Decade

C. Fazi

31 papers receiving 442 citations

Peers

Countries citing papers authored by C. Fazi

Since Specialization

Citations

This map shows the geographic impact of C. Fazi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Fazi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Fazi more than expected).

Fields of papers citing papers by C. Fazi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Fazi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Fazi. The network helps show where C. Fazi may publish in the future.

Co-authorship network

The 21 scholars most cited alongside C. Fazi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Fazi Line = papers co-authored together C. Fazi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Link budget calculations for nonlinear scattering Zenodo (CERN European Organization for Nuclear Research) ·C. Fazi,F. J. Crowne,Marc A. Ressler	2012	4
2	Nonlinear radar signatures from metal surfaces F. J. Crowne,C. Fazi	2009	2
3	A Lumped-Circuit Model for a Triband Trapped Dipole Array-Part 1: Model Description IEEE Antennas and Wireless Propagation Letters ·J-P Bournat,C. Fazi	2009	4
4	A Lumped-Circuit Model for a Triband Trapped Dipole Array-Part II: Stacked Arrays IEEE Antennas and Wireless Propagation Letters ·J-P Bournat,C. Fazi	2008	1
5	Dynamic Diode Mixer Damage Measurements R.V. Garver,C. Fazi,Heinz-Dietrich Brüns	2005	0
6	Wide dynamic range RF mixers using wide-bandgap semiconductors C. Fazi,Philip G. Neudeck	2002	10
7	Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications Journal of Applied Physics ·Reetika Joshi,Philip G. Neudeck,C. Fazi	2000	60
8	Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. II. Dynamic breakdown properties IEEE Transactions on Electron Devices ·Philip G. Neudeck,C. Fazi	1999	26
9	Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H–SiC Schottky contacts Journal of Applied Physics ·Li Zheng,R. P. Joshi,C. Fazi	1999	44
10	Nanosecond Risetime Pulse Characterization of SiC p<sup>+</sup>n Junction Diode Breakdown and Switching Properties Materials science forum ·Philip G. Neudeck,C. Fazi	1998	11
11	Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels Materials science forum ·R. P. Joshi,C. Fazi	1998	4
12	Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers IEEE Electron Device Letters ·Philip G. Neudeck,C. Fazi	1997	57
13	Simulations of deep level related lock-on conductivityin SiC diodessubject to ultrafast, high voltage reverse biasing pulses Electronics Letters ·R. P. Joshi,C. Fazi	1997	1
14	High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes Journal of Applied Physics ·Philip G. Neudeck,C. Fazi	1996	37
15	Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes NASA Technical Reports Server (NASA) ·Philip G. Neudeck,C. Fazi,J. D. Parsons	1996	4
16	White-beam synchrotron topographic studies of defects in 6H-SiC single crystals Journal of Physics D Applied Physics ·Michael Dudley,Shaoping Wang,Wei Huang,Alina Yang,V. F. Tsvetkov,C. Fazi	1995	86
17	White-beam synchrotron topographic analysis of multi-polytype SiC device configurations Journal of Physics D Applied Physics ·Yaping He sup sup,Wei Huang,Sheng Wang,J. A. Powell,Philip G. Neudeck,C. Fazi	1995	14
18	Characterization of Defect Structures in Lely 6H-SiC Single Crystals Using Synchrotron White Beam X-Ray Topography MRS Proceedings ·Wei Huang,Lizmarie Rivera,Michael Dudley,Philip G. Neudeck,J. A. Powell,C. Fazi	1994	3
19	Investigation of Filamentation Damage Resulting from Electromagnetic Breakdown in Si Bi-Polar Diodes MRS Proceedings ·A T Baszta,Michael Dudley,C. Fazi,D. Gordon-Smnith	1993	3
20	A new diagnostic tool for the non-destructive characterization of damage accompanying the electromagnetic breakdown of epitaxial silicon p-n junctions Materials Science and Engineering B ·Michael Dudley,A Sara,Ana Maria Segall-Corrêa,C. Fazi	1992	2

About C. Fazi

C. Fazi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Aerospace Engineering, Ceramics and Composites and Surfaces, Coatings and Films, having authored 32 papers that have together received 468 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (18 papers), Silicon and Solar Cell Technologies (8 papers), Semiconductor materials and devices (6 papers), Semiconductor materials and interfaces (5 papers), Electromagnetic Compatibility and Noise Suppression (5 papers), Electrostatic Discharge in Electronics (5 papers), Microwave Engineering and Waveguides (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Condensed Matter Physics (81 citations), Nuclear Energy and Engineering (3 citations), Electrical and Electronic Engineering (372 citations), Ceramics and Composites (30 citations) and Atomic and Molecular Physics, and Optics (114 citations). C. Fazi has collaborated with scholars based in United States and United Kingdom. Frequent co-authors include Philip G. Neudeck, R. P. Joshi, Reetika Joshi, Michael Dudley, Wei Huang, Li Zheng, V. F. Tsvetkov, Shaoping Wang, F. J. Crowne and J. A. Powell. Their work appears in journals such as Journal of Applied Physics, IEEE Antennas and Wireless Propagation Letters, Journal of Physics D Applied Physics, Materials Science and Engineering B and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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