C. Fazi

612 total citations
32 papers, 468 citations indexed

About

C. Fazi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Aerospace Engineering. According to data from OpenAlex, C. Fazi has authored 32 papers receiving a total of 468 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 6 papers in Aerospace Engineering. Recurrent topics in C. Fazi's work include Silicon Carbide Semiconductor Technologies (18 papers), Silicon and Solar Cell Technologies (8 papers) and Semiconductor materials and devices (6 papers). C. Fazi is often cited by papers focused on Silicon Carbide Semiconductor Technologies (18 papers), Silicon and Solar Cell Technologies (8 papers) and Semiconductor materials and devices (6 papers). C. Fazi collaborates with scholars based in United States and United Kingdom. C. Fazi's co-authors include Philip G. Neudeck, R. P. Joshi, Reetika Joshi, Michael Dudley, Wei Huang, V. F. Tsvetkov, Li Zheng, Shaoping Wang, F. J. Crowne and J. A. Powell and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

C. Fazi

31 papers receiving 442 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Fazi United States	11	372	114	81	70	52	32	468
W. Langheinrich Germany	10	243 0.7×	87 0.8×	34 0.4×	93 1.3×	18 0.3×	37	332
Han-Sung Kim South Korea	10	229 0.6×	127 1.1×	33 0.4×	132 1.9×	49 0.9×	45	380
Jesse B. Tucker United States	8	280 0.8×	78 0.7×	85 1.0×	43 0.6×	39 0.8×	28	330
Andreas Schumacher Germany	8	177 0.5×	78 0.7×	38 0.5×	37 0.5×	29 0.6×	16	290
Vincent Larrey France	10	250 0.7×	72 0.6×	30 0.4×	57 0.8×	54 1.0×	51	330
S. S. Mani United States	11	298 0.8×	79 0.7×	15 0.2×	128 1.8×	40 0.8×	30	487
Lorenzo Ceccarelli Denmark	14	448 1.2×	94 0.8×	64 0.8×	88 1.3×	31 0.6×	27	574
Yunfei Gao China	11	199 0.5×	74 0.6×	160 2.0×	83 1.2×	49 0.9×	39	356
Collin Hitchcock United States	13	414 1.1×	90 0.8×	69 0.9×	68 1.0×	67 1.3×	50	467
T. Kisu Japan	10	403 1.1×	53 0.5×	82 1.0×	66 0.9×	82 1.6×	19	503

Countries citing papers authored by C. Fazi

Since Specialization

Citations

This map shows the geographic impact of C. Fazi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Fazi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Fazi more than expected).

Fields of papers citing papers by C. Fazi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Fazi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Fazi. The network helps show where C. Fazi may publish in the future.

Co-authorship network of co-authors of C. Fazi

This figure shows the co-authorship network connecting the top 25 collaborators of C. Fazi. A scholar is included among the top collaborators of C. Fazi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Fazi. C. Fazi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Fazi, C., F. J. Crowne, & Marc A. Ressler. (2012). Link budget calculations for nonlinear scattering. Zenodo (CERN European Organization for Nuclear Research). 2. 1146–1150. 4 indexed citations

Crowne, F. J. & C. Fazi. (2010). Second-harmonic generation by electromagnetic waves at the surface of a semi-infinite metal. 11. 385–390. 10 indexed citations

Crowne, F. J. & C. Fazi. (2009). Nonlinear radar signatures from metal surfaces. 1–6. 2 indexed citations

Fazi, C., et al.. (2009). A Lumped-Circuit Model for a Triband Trapped Dipole Array-Part 1: Model Description. IEEE Antennas and Wireless Propagation Letters. 8. 14–18. 4 indexed citations

Fazi, C., et al.. (2008). A Lumped-Circuit Model for a Triband Trapped Dipole Array-Part II: Stacked Arrays. IEEE Antennas and Wireless Propagation Letters. 7. 648–651. 1 indexed citations

Garver, R.V., C. Fazi, & Heinz-Dietrich Brüns. (2005). Dynamic Diode Mixer Damage Measurements. 85. 535–536.

Fazi, C. & Philip G. Neudeck. (2002). Wide dynamic range RF mixers using wide-bandgap semiconductors. 1. 49–51. 10 indexed citations

Neudeck, Philip G. & C. Fazi. (1999). Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. II. Dynamic breakdown properties. IEEE Transactions on Electron Devices. 46(3). 485–492. 26 indexed citations

Joshi, R. P. & C. Fazi. (1998). Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels. Materials science forum. 264-268. 1033–1036. 4 indexed citations

10.

Neudeck, Philip G. & C. Fazi. (1998). Nanosecond Risetime Pulse Characterization of SiC p<sup>+</sup>n Junction Diode Breakdown and Switching Properties. Materials science forum. 264-268. 1037–1040. 11 indexed citations

11.

Fazi, C. & Philip G. Neudeck. (1998). Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors. Materials science forum. 264-268. 913–916. 5 indexed citations

12.

Neudeck, Philip G. & C. Fazi. (1997). Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers. IEEE Electron Device Letters. 18(3). 96–98. 57 indexed citations

13.

Joshi, R. P. & C. Fazi. (1997). Simulations of deep level related lock-on conductivityin SiC diodessubject to ultrafast, high voltage reverse biasing pulses. Electronics Letters. 33(25). 2162–2163. 1 indexed citations

14.

Neudeck, Philip G. & C. Fazi. (1996). High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes. Journal of Applied Physics. 80(2). 1219–1225. 37 indexed citations

15.

Neudeck, Philip G., C. Fazi, & J. D. Parsons. (1996). Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes. NASA Technical Reports Server (NASA). 4 indexed citations

16.

Dudley, Michael, et al.. (1995). White-beam synchrotron topographic studies of defects in 6H-SiC single crystals. Journal of Physics D Applied Physics. 28(4A). A63–A68. 86 indexed citations

17.

Huang, Wei, et al.. (1995). White-beam synchrotron topographic analysis of multi-polytype SiC device configurations. Journal of Physics D Applied Physics. 28(4A). A56–A62. 14 indexed citations

18.

Huang, Wei, et al.. (1994). Characterization of Defect Structures in Lely 6H-SiC Single Crystals Using Synchrotron White Beam X-Ray Topography. MRS Proceedings. 375. 3 indexed citations

19.

Huang, Wei, et al.. (1994). Computer Aided Synchrotron White Beam X-Ray Topographic Analysis of Multipolytype SiC Device Configurations. MRS Proceedings. 375. 1 indexed citations

20.

Dudley, Michael, et al.. (1993). Investigation of Filamentation Damage Resulting from Electromagnetic Breakdown in Si Bi-Polar Diodes. MRS Proceedings. 307. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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