P. G. LeComber

1.3k citations

54 papers · 910 indexed · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry top 10%
- Silicon Nanostructures and Photoluminescence
- Phase-change materials and chalcogenides

Papers in

Electrical and Electronic Engineering 51
- Thin-Film Transistor Technologies 45
- Silicon and Solar Cell Technologies 19
- Semiconductor materials and devices 16
- Advanced Memory and Neural Computing 10
- CCD and CMOS Imaging Sensors 3
Materials Chemistry 34
- Silicon Nanostructures and Photoluminescence 24
- Phase-change materials and chalcogenides 8

Co-authors: W. E. Spear A.J. Snell Kenneth D. Mackenzie Alex J. Hughes M.J. Rose A. G. Fitzgerald A.E. Owen J. Hajtó
Journals: Journal of Non-Crystalline Solids (17 papers)Applied Physics A (4 papers)Journal of Applied Physics (3 papers)Thin Solid Films (2 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: United Kingdom United States France

In The Last Decade

P. G. LeComber

51 papers receiving 872 citations

Peers

Countries citing papers authored by P. G. LeComber

Since Specialization

Citations

This map shows the geographic impact of P. G. LeComber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. G. LeComber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. G. LeComber more than expected).

Fields of papers citing papers by P. G. LeComber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. G. LeComber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. G. LeComber. The network helps show where P. G. LeComber may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. G. LeComber, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. G. LeComber Line = papers co-authored together P. G. LeComber links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Transient and stress effects in amorphous silicon thin-film transistors Philosophical Magazine B ·M. Hack, Richard L. Weisfield, Martha Lucía Vargas Bacci, M. J. Thompson, Kelvin Peter Spann, P. G. LeComber	1994	2
2	Solid phase crystallization of thin films of Si prepared by plasma-enhanced chemical vapor deposition Journal of Applied Physics ·Angela Margaret Hobson, P. G. LeComber, A. G. Fitzgerald	1993	86
3	Structural and electrical properties of SiNx:H films Journal of Applied Physics ·Angela Margaret Hobson, R.A.G. Gibson, P. G. LeComber	1993	20
4	Crystal-clear perspective of amorphous silicon Physics World ·P. G. LeComber, Manon Notenboom	1992	1
5	Amorphous Silicon Analogue Memory Elements MRS Proceedings ·M.J. Rose, J. Hajtó, P. G. LeComber, A.J. Snell, A.E. Owen, 順三馬場	1991	7
6	Density-of-states and transient simulations of amorphous-silicon devices Journal of Non-Crystalline Solids ·J. G. Shaw, Mike Hack, P. G. LeComber, Kelvin Peter Spann	1991	3
7	Observation of Quantized Ballistic Transport in Amorphous Silicon Memory Structures MRS Proceedings ·J. Hajtó, M.J. Rose, P. G. LeComber, A.E. Owen, A.J. Snell	1990	2
8	Anomalous high zero bias resistance in metal - amorphous silicon - metal structures Journal of Non-Crystalline Solids ·A Peykarnegar, J. Hajtó, S. Reynolds, W. K. Choi, M.J. Rose, P. G. LeComber, A.J. Snell, A.E. Owen	1989	11
9	Amorphous silicon memories show promise Physics World ·W. E. Spear, P. G. LeComber	1989	1
10	Transient current instabilities in a-Si: Hp+ni structures IEE Proceedings I Solid State and Electron Devices ·W. K. Choi, S. Reynolds, J. Hajtó, A.E. Owen, A.J. Snell, M.J. Rose, P. G. LeComber, W. E. Spear	1987	1
11	Focused session on device physics Journal of Non-Crystalline Solids ·P. G. LeComber	1987	2
12	Transport in the electron tail states of amorphous silicon Journal of Non-Crystalline Solids ·W. E. Spear, Anders Ruden, XU Yon, P. G. LeComber	1987	20
13	Comments on the calculation of the extended state electron mobility in amorphous silicon Solid State Communications ·Jessica Marshall, P. G. LeComber, W. E. Spear	1985	29
14	Electrical, optical and luminescence properties of a-Si/SiN multilayers Journal of Non-Crystalline Solids ·P. G. LeComber, W. E. Spear, Roger L. Gibson, M. Hopkinson, Shota Hori, T. M. Searle, J.H. Duyzer	1985	17
15	ODMR detected via the electroluminescence in p⁺-i-n⁺a-Si:H cells Journal of Physics C Solid State Physics ·K. P. Homewood, B.C. Cavenett, I. G. Austin, T. M. Searle, W. E. Spear, P. G. LeComber	1984	4
16	Some new results on transport and density of state distribution in glow discharge microcrystalline silicon Journal of Non-Crystalline Solids ·P. G. LeComber, G. Willeke, W. E. Spear	1983	58
17	The characteristics and properties of optimised amorphous silicon field effect transistors Applied Physics A ·Kenneth D. Mackenzie, A.J. Snell, I. D. French, P. G. LeComber, W. E. Spear	1983	70
18	Spin effects in p⁺-i-n⁺a-Si:H cells; photovoltaic detected magnetic resonance (PDMR) Journal of Physics C Solid State Physics ·K. P. Homewood, B.C. Cavenett, W. E. Spear, P. G. LeComber	1983	16
19	Electronic properties of microcrystalline silicon prepared in the glow discharge plasma Physica B+C ·W. E. Spear, G. Willeke, P. G. LeComber	1983	15
20	Application of amorphous silicon field effect transistors in addressable liquid crystal display panels Applied Physics A ·A.J. Snell, Kenneth D. Mackenzie, W. E. Spear, P. G. LeComber, Alex J. Hughes	1981	174

About P. G. LeComber

P. G. LeComber is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Mechanical Engineering, having authored 54 papers that have together received 910 indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (45 papers), Silicon Nanostructures and Photoluminescence (24 papers), Silicon and Solar Cell Technologies (19 papers), Semiconductor materials and devices (16 papers), Advanced Memory and Neural Computing (10 papers), Phase-change materials and chalcogenides (8 papers), Semiconductor materials and interfaces (4 papers) and CCD and CMOS Imaging Sensors (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (815 citations), Materials Chemistry (575 citations), Ceramics and Composites (50 citations), Atomic and Molecular Physics, and Optics (160 citations) and Polymers and Plastics (71 citations). P. G. LeComber has collaborated with scholars based in United Kingdom, United States and France. Frequent co-authors include W. E. Spear, A.J. Snell, Kenneth D. Mackenzie, Alex J. Hughes, M.J. Rose, A. G. Fitzgerald, A.E. Owen, J. Hajtó, G. Willeke and I. D. French. Their work appears in journals such as Journal of Non-Crystalline Solids, Applied Physics A, Journal of Applied Physics, Thin Solid Films and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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