A.J. Snell

1.1k citations

50 papers · 849 indexed · h-index 15

Electrical and Electronic Engineering top 5%
- Thin-Film Transistor Technologies 36
- Semiconductor materials and devices 24
- Advanced Memory and Neural Computing 17
Materials Chemistry top 10%
- Silicon Nanostructures and Photoluminescence 15
- Phase-change materials and chalcogenides 11
Ceramics and Composites
Polymers and Plastics
- Transition Metal Oxide Nanomaterials 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 5
- Quantum and electron transport phenomena 5

Co-authors: W. E. Spear P. G. Le Comber P. G. LeComber Kenneth D. Mackenzie J. Hajtó A.E. Owen M.J. Rose Alex J. Hughes
Cited by: Electrical and Electronic Engineering Materials Chemistry Ceramics and Composites
Journals: Journal of Non-Crystalline Solids (15 papers)Philosophical Magazine B (7 papers)Applied Physics A (5 papers)
Partner nations: United Kingdom United States Egypt

In The Last Decade

A.J. Snell

49 papers receiving 808 citations

Peers

Countries citing papers authored by A.J. Snell

Since Specialization

Citations

This map shows the geographic impact of A.J. Snell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.J. Snell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.J. Snell more than expected).

Fields of papers citing papers by A.J. Snell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.J. Snell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.J. Snell. The network helps show where A.J. Snell may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A.J. Snell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A.J. Snell Line = papers co-authored together A.J. Snell links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Design and fabrication of a copper test structure for use as an electrical critical dimension reference MANJIT SINGH, MONG-FONG HORNG, CHUN-CHIH LO, D.VETRITHANGAM, SIVA SHANKAR,Levente Nagy,A.M. Gundlach,L. Haworth,Natalya N. Sizova,A.J. Snell,J.T.M. Stevenson,A.J. Walton,Richard A. Allen,M.W. Cresswell	2006	4
2	Relaxation of process induced surface stress in amorphous silicon carbide thin films using low energy ion bombardment Applied Physics Letters ·Rukhman Ml,Kwang-Gi Min,A.J. Snell,Rebecca Cheung	2006	7
3	Electronic switching in amorphous silicon devices: properties of the conducting filament A.E. Owen,Jun Hu,J. Hajtó,A.J. Snell	2002	2
4	Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices IEICE Transactions on Electronics ·M.J. Rose,Jian Hu,J. Hajtó,A.J. Snell	2001	2
5	Current-induced instability in Cr–p⁺ a-Si:H–V thin film devices Philosophical Magazine B ·Jun Hu,A.J. Snell,J. Hajtó,A.E. Owen	2000	1
6	Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structures Applied Surface Science ·J. Hajtó,V. Iu. Zhukov,A.J. Snell,G. H. W. Milburn,A.E. Owen	1996	4
7	Critical behavior of the dielectric properties near the metal-non-metal transition in Cr/p+ a-Si:H/V thin film devices Journal of Non-Crystalline Solids ·Jun Hu,A.J. Snell,J. Hajtó,A.E. Owen,M.J. Rose	1996	2
8	DC and AC measurements on metal/a-Si:H/metal thin film devices Journal of Non-Crystalline Solids ·J. Hajtó,A.J. Snell,Jun Hu,Andrew Holmes,A.E. Owen,M.J. Rose,R.A.G. Gibson	1993	1
9	The Role of the a-Si:H Layer in Metal / a-Si:H / Metal Memory Structures MRS Proceedings ·Ian S. Osborne,J. Hajtó,M.J. Rose,A.J. Snell,Milena Surmová,A.E. Owen	1992	3
10	Analogue memory and ballistic electron effects in metal-amorphous silicon structures Philosophical Magazine B ·J. Hajtó,A.E. Owen,A.J. Snell,P. G. Le Comber,M.J. Rose	1991	27
11	Observation of Quantized Ballistic Transport in Amorphous Silicon Memory Structures MRS Proceedings ·J. Hajtó,M.J. Rose,P. G. LeComber,A.E. Owen,A.J. Snell	1990	2
12	Anomalous high zero bias resistance in metal - amorphous silicon - metal structures Journal of Non-Crystalline Solids ·A Peykarnegar,J. Hajtó,S. Reynolds,W. K. Choi,M.J. Rose,P. G. LeComber,A.J. Snell,A.E. Owen	1989	11
13	Transient current instabilities in a-Si: Hp+ni structures IEE Proceedings I Solid State and Electron Devices ·W. K. Choi,S. Reynolds,J. Hajtó,A.E. Owen,A.J. Snell,M.J. Rose,P. G. LeComber,W. E. Spear	1987	1
14	IR and RBS studies of RF sputtered films of vanadium doped silicon dioxide Journal of Non-Crystalline Solids ·Leticia O. Ferreira,A.J. Snell,K. V. Krishna,A.E. Owen	1987	0
15	The characteristics and properties of optimised amorphous silicon field effect transistors Applied Physics A ·Kenneth D. Mackenzie,A.J. Snell,I. D. French,P. G. LeComber,W. E. Spear	1983	70
16	Recent applied developments in the amorphous silicon field Thin Solid Films ·W. E. Spear,P. G. Le Comber,A.J. Snell,R.A.G. Gibson	1982	11
17	Application of amorphous silicon field effect transistors in integrated circuits Applied Physics A ·A.J. Snell,W. E. Spear,P. G. Le Comber,Katrin Mackenzie	1981	42
18	The lifetime of injected carriers in amorphous silicon p–n junctions Philosophical Magazine B ·A.J. Snell,W. E. Spear,P. G. Le Comber	1981	14
19	Application of amorphous silicon field effect transistors in addressable liquid crystal display panels Applied Physics A ·A.J. Snell,Kenneth D. Mackenzie,W. E. Spear,P. G. LeComber,Alex J. Hughes	1981	174
20	Recent developments in amorphous silicon p-n junction devices Journal of Non-Crystalline Solids ·R.A.G. Gibson,W. E. Spear,P. G. Le Comber,A.J. Snell	1980	19

About A.J. Snell

A.J. Snell is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 50 papers that have together received 849 indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (36 papers), Semiconductor materials and devices (24 papers), Advanced Memory and Neural Computing (17 papers), Silicon Nanostructures and Photoluminescence (15 papers), Phase-change materials and chalcogenides (11 papers), Transition Metal Oxide Nanomaterials (6 papers), Semiconductor materials and interfaces (5 papers) and Quantum and electron transport phenomena (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (767 citations), Materials Chemistry (525 citations), Ceramics and Composites (42 citations), Polymers and Plastics (97 citations) and Atomic and Molecular Physics, and Optics (193 citations). A.J. Snell has collaborated with scholars based in United Kingdom, United States and Egypt. Frequent co-authors include W. E. Spear, P. G. Le Comber, P. G. LeComber, Kenneth D. Mackenzie, J. Hajtó, A.E. Owen, M.J. Rose, Alex J. Hughes, I. D. French and W. K. Choi. Their work appears in journals such as Journal of Non-Crystalline Solids, Philosophical Magazine B, Applied Physics A, Thin Solid Films and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact