A.J. Snell

1.1k total citations
50 papers, 849 citations indexed

About

A.J. Snell is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A.J. Snell has authored 50 papers receiving a total of 849 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 28 papers in Materials Chemistry and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A.J. Snell's work include Thin-Film Transistor Technologies (36 papers), Semiconductor materials and devices (24 papers) and Advanced Memory and Neural Computing (17 papers). A.J. Snell is often cited by papers focused on Thin-Film Transistor Technologies (36 papers), Semiconductor materials and devices (24 papers) and Advanced Memory and Neural Computing (17 papers). A.J. Snell collaborates with scholars based in United Kingdom, United States and Egypt. A.J. Snell's co-authors include W. E. Spear, P. G. Le Comber, P. G. LeComber, Kenneth D. Mackenzie, J. Hajtó, A.E. Owen, M.J. Rose, Alex J. Hughes, I. D. French and W. K. Choi and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A.J. Snell

49 papers receiving 808 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A.J. Snell United Kingdom	15	767	525	193	97	59	50	849
P. G. LeComber United Kingdom	16	815 1.1×	575 1.1×	160 0.8×	71 0.7×	56 0.9×	54	910
R.A.G. Gibson United Kingdom	13	536 0.7×	447 0.9×	70 0.4×	40 0.4×	30 0.5×	43	585
G. Spadini United States	6	804 1.0×	547 1.0×	194 1.0×	102 1.1×	63 1.1×	12	882
S. J. Hudgens United States	17	825 1.1×	883 1.7×	125 0.6×	174 1.8×	98 1.7×	37	1.1k
Motoyasu Terao Japan	16	660 0.9×	544 1.0×	330 1.7×	63 0.6×	264 4.5×	63	907
K. A. Nasyrov Russia	15	602 0.8×	329 0.6×	80 0.4×	19 0.2×	34 0.6×	20	653
Manabu Gomi Japan	14	526 0.7×	420 0.8×	175 0.9×	81 0.8×	60 1.0×	55	793
C. Guedj France	15	591 0.8×	210 0.4×	177 0.9×	31 0.3×	59 1.0×	77	664
Sir Nevill Mott United Kingdom	5	372 0.5×	508 1.0×	140 0.7×	128 1.3×	59 1.0×	10	769
S. Dueñas Spain	19	1.3k 1.7×	498 0.9×	305 1.6×	63 0.6×	57 1.0×	146	1.4k

Countries citing papers authored by A.J. Snell

Since Specialization

Citations

This map shows the geographic impact of A.J. Snell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.J. Snell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.J. Snell more than expected).

Fields of papers citing papers by A.J. Snell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.J. Snell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.J. Snell. The network helps show where A.J. Snell may publish in the future.

Co-authorship network of co-authors of A.J. Snell

This figure shows the co-authorship network connecting the top 25 collaborators of A.J. Snell. A scholar is included among the top collaborators of A.J. Snell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.J. Snell. A.J. Snell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gundlach, A.M., L. Haworth, A.J. Snell, et al.. (2006). Design and fabrication of a copper test structure for use as an electrical critical dimension reference. 43. 124–129. 4 indexed citations

Snell, A.J., et al.. (2006). Relaxation of process induced surface stress in amorphous silicon carbide thin films using low energy ion bombardment. Applied Physics Letters. 89(3). 7 indexed citations

Owen, A.E., Jun Hu, J. Hajtó, & A.J. Snell. (2002). Electronic switching in amorphous silicon devices: properties of the conducting filament. 1. 830–833. 2 indexed citations

Rose, M.J., Jian Hu, J. Hajtó, & A.J. Snell. (2001). Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices. IEICE Transactions on Electronics. 84(9). 1197–1201. 2 indexed citations

Hu, Jun, A.J. Snell, J. Hajtó, & A.E. Owen. (2000). Current-induced instability in Cr–p⁺ a-Si:H–V thin film devices. Philosophical Magazine B. 80(1). 29–43. 1 indexed citations

Hajtó, J., et al.. (1996). Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structures. Applied Surface Science. 92. 579–584. 4 indexed citations

Hu, Jun, A.J. Snell, J. Hajtó, A.E. Owen, & M.J. Rose. (1996). Critical behavior of the dielectric properties near the metal-non-metal transition in Cr/p+ a-Si:H/V thin film devices. Journal of Non-Crystalline Solids. 198-200. 1217–1220. 2 indexed citations

Hajtó, J., A.J. Snell, Jun Hu, et al.. (1993). DC and AC measurements on metal/a-Si:H/metal thin film devices. Journal of Non-Crystalline Solids. 164-166. 821–824. 1 indexed citations

Osborne, Ian S., et al.. (1992). The Role of the a-Si:H Layer in Metal / a-Si:H / Metal Memory Structures. MRS Proceedings. 258. 3 indexed citations

10.

Hajtó, J., A.E. Owen, A.J. Snell, P. G. Le Comber, & M.J. Rose. (1991). Analogue memory and ballistic electron effects in metal-amorphous silicon structures. Philosophical Magazine B. 63(1). 349–369. 27 indexed citations

11.

Hajtó, J., M.J. Rose, P. G. LeComber, A.E. Owen, & A.J. Snell. (1990). Observation of Quantized Ballistic Transport in Amorphous Silicon Memory Structures. MRS Proceedings. 192. 2 indexed citations

12.

Hajtó, J., S. Reynolds, W. K. Choi, et al.. (1989). Anomalous high zero bias resistance in metal - amorphous silicon - metal structures. Journal of Non-Crystalline Solids. 115(1-3). 171–173. 11 indexed citations

13.

Choi, W. K., S. Reynolds, J. Hajtó, et al.. (1987). Transient current instabilities in a-Si: Hp+ni structures. IEE Proceedings I Solid State and Electron Devices. 134(1). 1–1. 1 indexed citations

14.

Snell, A.J., et al.. (1987). IR and RBS studies of RF sputtered films of vanadium doped silicon dioxide. Journal of Non-Crystalline Solids. 90(1-3). 291–294.

15.

Mackenzie, Kenneth D., A.J. Snell, I. D. French, P. G. LeComber, & W. E. Spear. (1983). The characteristics and properties of optimised amorphous silicon field effect transistors. Applied Physics A. 31(2). 87–92. 70 indexed citations

16.

Spear, W. E., P. G. Le Comber, A.J. Snell, & R.A.G. Gibson. (1982). Recent applied developments in the amorphous silicon field. Thin Solid Films. 90(4). 359–370. 11 indexed citations

17.

Snell, A.J., W. E. Spear, P. G. Le Comber, & Katrin Mackenzie. (1981). Application of amorphous silicon field effect transistors in integrated circuits. Applied Physics A. 26(2). 83–86. 42 indexed citations

18.

Snell, A.J., W. E. Spear, & P. G. Le Comber. (1981). The lifetime of injected carriers in amorphous silicon p–n junctions. Philosophical Magazine B. 43(3). 407–417. 14 indexed citations

19.

Snell, A.J., Kenneth D. Mackenzie, W. E. Spear, P. G. LeComber, & Alex J. Hughes. (1981). Application of amorphous silicon field effect transistors in addressable liquid crystal display panels. Applied Physics A. 24(4). 357–362. 174 indexed citations

20.

Gibson, R.A.G., W. E. Spear, P. G. Le Comber, & A.J. Snell. (1980). Recent developments in amorphous silicon p-n junction devices. Journal of Non-Crystalline Solids. 35-36. 725–730. 19 indexed citations

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