Nobuhiro Endo

534 total citations
36 papers, 381 citations indexed

About

Nobuhiro Endo is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Nobuhiro Endo has authored 36 papers receiving a total of 381 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 13 papers in Biomedical Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Nobuhiro Endo's work include Semiconductor materials and devices (20 papers), Advanced Surface Polishing Techniques (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Nobuhiro Endo is often cited by papers focused on Semiconductor materials and devices (20 papers), Advanced Surface Polishing Techniques (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Nobuhiro Endo collaborates with scholars based in Japan, United Kingdom and United States. Nobuhiro Endo's co-authors include Akihiko Ishitani, Hiroshi Kitajima, Yukinori Kurogi, N. Kasai, Hideki Tsuya, Shinji Matsui, H. Gokan, Tsuyoshi Yamane, Yuki Fujimoto and Takamaro Kikkawa and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Journal of Solid-State Circuits.

In The Last Decade

Nobuhiro Endo

31 papers receiving 348 citations

Peers

Nobuhiro Endo
D. F. Weirauch United States
S. Tohno Japan
T. Kaga Japan
Francesco Sarubbi Netherlands
D. M. Scott United States
D. F. Weirauch United States
Nobuhiro Endo
Citations per year, relative to Nobuhiro Endo Nobuhiro Endo (= 1×) peers D. F. Weirauch

Countries citing papers authored by Nobuhiro Endo

Since Specialization
Citations

This map shows the geographic impact of Nobuhiro Endo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nobuhiro Endo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nobuhiro Endo more than expected).

Fields of papers citing papers by Nobuhiro Endo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nobuhiro Endo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nobuhiro Endo. The network helps show where Nobuhiro Endo may publish in the future.

Co-authorship network of co-authors of Nobuhiro Endo

This figure shows the co-authorship network connecting the top 25 collaborators of Nobuhiro Endo. A scholar is included among the top collaborators of Nobuhiro Endo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nobuhiro Endo. Nobuhiro Endo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Yamane, Tsuyoshi, et al.. (2003). Mechanically steered tracking antenna for land mobile satellite communications. 1314–1317. 11 indexed citations
3.
Kikkawa, Takamaro, Nobuhiro Endo, Takuya Yamazaki, & H. Watanabe. (2003). Comparison of refractory metal and silicide capping effects on aluminum metallizations. 463–469. 1 indexed citations
4.
Kasai, N., Nobuhiro Endo, & Akihiko Ishitani. (2003). Deep-submicron tungsten gate CMOS technology. 26. 242–245.
5.
Kikkawa, Takamaro & Nobuhiro Endo. (1993). Influence of hydrogen evolution from plasma-deposited silicon nitride on underlying aluminum deformations. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(2). 228–233. 2 indexed citations
6.
Kikkawa, Takamaro & Nobuhiro Endo. (1992). The influence of underlying metals on the hydrogen evolution from plasma-deposited silicon nitride films. Journal of Applied Physics. 71(2). 958–965.
7.
Kasai, N. & Nobuhiro Endo. (1992). Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition. Journal of The Electrochemical Society. 139(7). 1983–1988. 3 indexed citations
8.
Endo, Nobuhiro, et al.. (1990). In-depth profiling of the SiO2/Si-interface electronic structure using low-energy electron energy loss spectroscopy. Surface Science. 234(1-2). 121–126. 13 indexed citations
9.
Kitajima, Hiroshi, Yuki Fujimoto, N. Kasai, Akihiko Ishitani, & Nobuhiro Endo. (1989). Lattice defect in selective epitaxial silicon and laterally overgrown regions on SiO2. Journal of Crystal Growth. 98(3). 264–276. 18 indexed citations
10.
Kasai, N., Nobuhiro Endo, Akihiko Ishitani, & Hiroshi Kitajima. (1987). 1/4-µm CMOS isolation technique using selective epitaxy. IEEE Transactions on Electron Devices. 34(6). 1331–1336. 11 indexed citations
11.
Endo, Nobuhiro, N. Kasai, Akihiko Ishitani, Hiroshi Kitajima, & Yukinori Kurogi. (1986). Scaled CMOS technology using SEG isolation and buried well process. IEEE Transactions on Electron Devices. 33(11). 1659–1666. 15 indexed citations
12.
Ishitani, Akihiko, Hiroshi Kitajima, Nobuhiro Endo, & N. Kasai. (1985). Facet Formation in Selective Silicon Epitaxial Growth. Japanese Journal of Applied Physics. 24(10R). 1267–1267. 26 indexed citations
13.
Endo, Nobuhiro, et al.. (1984). Device Layer Transfer Technique using Chemi-Mechanical Polishing. Japanese Journal of Applied Physics. 23(10A). L815–L815. 2 indexed citations
14.
Endo, Nobuhiro, et al.. (1984). Novel device isolation technology with selective epitaxial growth. IEEE Transactions on Electron Devices. 31(9). 1283–1288. 11 indexed citations
15.
Ishitani, Akihiko, Nobuhiro Endo, & Hideki Tsuya. (1984). Local Loading Effect in Selective Silicon Epitaxy. Japanese Journal of Applied Physics. 23(6A). L391–L391. 37 indexed citations
16.
Kimura, Masakazu, et al.. (1984). Hydrostatic float polishing for wafer preparation. Review of Scientific Instruments. 55(11). 1867–1868. 2 indexed citations
17.
Endo, Nobuhiro & Shinji Matsui. (1983). Etching Characteristics for Organosilica. Japanese Journal of Applied Physics. 22(2A). L109–L109. 5 indexed citations
18.
Endo, Nobuhiro, N. Kasai, Akihiko Ishitani, & Yukinori Kurogi. (1983). CMOS technology using SEG isolation technique. 31–34. 7 indexed citations
19.
Endo, Nobuhiro, et al.. (1982). New tri-level structures for submicron photolithography. 395–398. 1 indexed citations
20.
Endo, Nobuhiro & Yukinori Kurogi. (1980). 1-/spl mu/m MOS Process Using Anisotropic Dry Etching. IEEE Journal of Solid-State Circuits. 15(4). 411–416. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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