Misaichi Takeuchi

1.0k total citations
33 papers, 874 citations indexed

About

Misaichi Takeuchi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Misaichi Takeuchi has authored 33 papers receiving a total of 874 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Misaichi Takeuchi's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (10 papers) and Ga2O3 and related materials (7 papers). Misaichi Takeuchi is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (10 papers) and Ga2O3 and related materials (7 papers). Misaichi Takeuchi collaborates with scholars based in Japan, Germany and Switzerland. Misaichi Takeuchi's co-authors include Yoshinobu Aoyagi, Satoru Tanaka, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Yasunori Tokuda, Toshiyuki Oishi, Koji Kawasaki, Yasushi Nanishi and Toru Kinoshita and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Misaichi Takeuchi

33 papers receiving 848 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Misaichi Takeuchi Japan 15 685 392 349 285 188 33 874
M. Kurouchi Japan 12 342 0.5× 212 0.5× 122 0.3× 133 0.5× 126 0.7× 38 479
H. P. Maruska United States 11 825 1.2× 489 1.2× 240 0.7× 405 1.4× 256 1.4× 17 922
Shunya Tanaka Japan 15 308 0.4× 164 0.4× 118 0.3× 139 0.5× 272 1.4× 40 604
Yuri Bilenko United States 6 618 0.9× 438 1.1× 137 0.4× 284 1.0× 218 1.2× 14 656
Alex Dobrinsky United States 8 606 0.9× 440 1.1× 182 0.5× 446 1.6× 234 1.2× 12 818
James Grandusky United States 16 860 1.3× 541 1.4× 252 0.7× 365 1.3× 301 1.6× 52 928
Hernán Rodríguez Germany 8 778 1.1× 488 1.2× 217 0.6× 370 1.3× 280 1.5× 12 856
Christian Kühn Germany 18 1.1k 1.6× 734 1.9× 287 0.8× 482 1.7× 382 2.0× 36 1.2k
S.M. Khalil Egypt 16 296 0.4× 160 0.4× 60 0.2× 237 0.8× 110 0.6× 32 594
N.I. Kuznetsov Russia 14 396 0.6× 168 0.4× 418 1.2× 130 0.5× 81 0.4× 52 628

Countries citing papers authored by Misaichi Takeuchi

Since Specialization
Citations

This map shows the geographic impact of Misaichi Takeuchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Misaichi Takeuchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Misaichi Takeuchi more than expected).

Fields of papers citing papers by Misaichi Takeuchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Misaichi Takeuchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Misaichi Takeuchi. The network helps show where Misaichi Takeuchi may publish in the future.

Co-authorship network of co-authors of Misaichi Takeuchi

This figure shows the co-authorship network connecting the top 25 collaborators of Misaichi Takeuchi. A scholar is included among the top collaborators of Misaichi Takeuchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Misaichi Takeuchi. Misaichi Takeuchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Ke, Tsutomu Araki, Misaichi Takeuchi, Euijoon Yoon, & Yasushi Nanishi. (2014). Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate. Applied Physics Letters. 104(3). 32108–32108. 14 indexed citations
2.
Aida, Hideo, Seong‐Woo Kim, Kazuhiko Sunakawa, et al.. (2012). III–Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation. Japanese Journal of Applied Physics. 51(2R). 25502–25502. 9 indexed citations
3.
Aoyagi, Yoshinobu, et al.. (2011). Inactivation of Bacterial Viruses in Water Using Deep Ultraviolet Semiconductor Light-Emitting Diode. Journal of Environmental Engineering. 137(12). 1215–1218. 77 indexed citations
4.
Nanjo, Takuma, Misaichi Takeuchi, Muneyoshi Suita, et al.. (2011). AlGaN Channel HEMT with Extremely High Breakdown Voltage. MRS Proceedings. 1324. 3 indexed citations
5.
6.
Nanjo, Takuma, Misaichi Takeuchi, Muneyoshi Suita, et al.. (2008). Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors. Applied Physics Letters. 92(26). 134 indexed citations
7.
Kumagai, Yoshinao, Rie Togashi, Hisashi Murakami, et al.. (2007). Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2. Journal of Crystal Growth. 305(2). 366–371. 60 indexed citations
8.
Nanjo, Takuma, Misaichi Takeuchi, Muneyoshi Suita, et al.. (2007). Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTs. 397–400. 18 indexed citations
9.
Kinoshita, Toru, et al.. (2006). Fabrication of GaN‐based striped structures along the <11$ \bar 2 $0> direction by the combination of RIE dry‐etching and KOH wet‐etching techniques to recover dry‐etching damage. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1624–1628. 7 indexed citations
10.
Kawasaki, Koji, et al.. (2006). Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique. Applied Physics Letters. 89(26). 45 indexed citations
11.
Kinoshita, Toru, et al.. (2006). Straight and Smooth Etching of GaN (1100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques. Japanese Journal of Applied Physics. 45(5R). 3988–3988. 46 indexed citations
12.
Takahashi, Takuji, et al.. (2003). Light-illuminated STM studies on photo-absorption in InAs nanowires. Ultramicroscopy. 97(1-4). 1–6. 6 indexed citations
13.
Takeuchi, Misaichi, et al.. (2002). Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy. Ultramicroscopy. 91(1-4). 127–132. 10 indexed citations
14.
Takeuchi, Misaichi, et al.. (2002). Photoabsorption Characterization on Surface InAs Nanostructures Using Light-Illuminated Scanning Tunneling Microscopy. Japanese Journal of Applied Physics. 41(Part 1, No. 7B). 4990–4993. 6 indexed citations
15.
Aoyagi, Yoshinobu, Satoru Tanaka, Hideki Hirayama, & Misaichi Takeuchi. (2001). Quantum dot formation and crystal growth using an atomic nano-mask. Physica E Low-dimensional Systems and Nanostructures. 11(2-3). 89–93. 3 indexed citations
16.
Ozasa, Kazunari, et al.. (2001). Photoluminescence of InGaAs(P) dots with quasi-zero-dimensional confinement. Materials Science and Engineering B. 86(1). 34–40. 4 indexed citations
17.
Tanaka, Satoru, Misaichi Takeuchi, & Yoshinobu Aoyagi. (2000). Anti-Surfactant in III-Nitride Epitaxy –Quantum Dot Formation and Dislocation Termination–. Japanese Journal of Applied Physics. 39(8B). L831–L831. 137 indexed citations
18.
Kawashima, Kenji, et al.. (1999). <title>Photoexcitation-induced current sensing on semi-insulating GaAs using a tunneling microscope tip</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3897. 658–665. 1 indexed citations
19.
Takeuchi, Misaichi, et al.. (1999). Selectively observed spatially indirect Stark-ladder transitions in asymmetric double-well GaAs/AlAs superlattices. Journal of Applied Physics. 85(1). 444–450. 3 indexed citations
20.
Nakashima, Hisao, Misaichi Takeuchi, Kazuki Sato, et al.. (1995). Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3° toward (111)A by molecular beam epitaxy. Materials Science and Engineering B. 35(1-3). 295–298. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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